Powder Diffraction of Components Subject to Corrosion in Fuse Cutouts with CeramicInsulation

Aiming identification of the components most affected by corrosion under saline environment conditions, we have carried out X-ray diffraction measurements in ceramic and bond materials, all in the powder form. The ceramic is analyzed before and after thermal annealing at 1000 degrees C, showing the same DRX peaks, although better defined after annealing. Identification suggests the presence of Al(6)Si(2)O(13) (Mullite) and SiO(2) (Quartz). Analysis of the junction (bond) material shows similar peaks, but a metallic preponderance is observed. Thermal annealing of the junction is done at much lower temperature, because it melts in the range 135 degrees C-170 degrees C, when a whitish smoke begins to show up along with strong sulfur odor.

Propriedades estruturais e térmicas de vidros teluretos 20Li2O-80TeO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Cerâmicas eletrônicas à base de SnO2 e TiO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Resistividade do filme depositado via sol-gel e estado de oxidação do dopante Ce na matriz SnO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Vibrational spectra and surface-enhanced resonance Raman scattering of palladium phthalocyanine evaporated films

The vibrational spectra of palladium phthalocyanine (PdPc) evaporated thin solid films are reported, including the resonance Raman scattering, surface-enhanced resonance Raman scattering (SERRS) and SERRS mapping of the film surface using micro-Raman spectroscopy with 633 nm laser radiation. SERRS of PdPc was obtained by evaporating an overlayer of Ag nanoparticles on to the PdPc film on glass. The SERRS enhancement factor is estimated as similar to10(4) with reference to PdPc evaporated films on glass. The molecular organization of the PdPc evaporated films was probed using transmission and reflection-absorption infrared spectra. It was established that a random molecular distribution found in PdPc evaporated films is independent of temperature. No evidence of thermal degradation due to thermal annealing was found in the films. Electronic absorption and emission spectra are also discussed. Copyright (C) 2002 John Wiley Sons, Ltd.

Erbium- and ytterbium-doped sol-gel SiO2-HfO2 crack-free thick films onto silica on silicon substrate

Aware of the difficulties in applying sol-gel technology on the preparation of thin films suitable for optical devices, the present paper reports on the preparation of crack-free erbium- and ytterbium-doped silica: hafnia thick films onto silica on silicon. The film was obtained using a dispersion of silica-hafnia nanoparticles into a binder solution, spin-coating, regular thermal process and rapid thermal process. The used methodology has allowed a significant increase of the film thickness. Based on the presented results good optical-quality films with the required thickness for a fiber matching single mode waveguide were obtained using the erbium- and ytterbium-activated sol-gel silica:hafnia system. The prepared film supports two transversal electric modes at 1550 nm and the difference between the transversal electric mode and the transversal magnetic mode is very small, indicating low birefringence. Photoluminescence of the I-4(13/2) -> I-4(15/2) transition of erbium ions shows a broad band centered at 1.53 mu m with full width at a half maximum of 28 nm. Up-conversion emission was carried out under different pump laser powers, and just one transition at red region was observed. (c) 2006 Elsevier B.V. All rights reserved.

Preparation and characterization of erbium and ytterbium co-doped sol-gel SiO2 : HfO2 films for planar waveguides

This work reports on the preparation of erbium and ytterbium co-doped SiO2:HfO2 single mode planar waveguides using the sol-gel method. Silica nanoparticles were prepared from tetraethylorthosilicate in basic media and the films were characterized by transmission electron microscopy, scanning electron microscopy, mechanical profilometry, M-lines spectroscopy based on prism coupling technique, X-ray diffractometry, infrared spectroscopy and photoluminescence spectroscopy. The film thicknesses and the refractive indexes were adjusted in order to satisfy a future efficient coupling to single mode optical fiber. Films suitable for both weak and strong light confinement were prepared varying hafnia concentration into the silica matrix. The lifetime values of erbium I-4(13/2) state were measured in order to investigate the influence of clustering and hydroxyl groups on the fluorescence quantum efficiency of the I-4(13/2) level, responsible for the emission at 1.55 mu m attributed to the I-4(13/2) -> I-4(15/2) transition. The high lifetime values suggest the absence of erbium clusters and the elimination of hydroxyl groups by rapid thermal process. (c) 2007 Elsevier B.V. All rights reserved.

Structural and microstructural characterization of SrBi2(Ta0.5Nb0.48W0.02)(2)O-9 powders

SrBi2(Ta0.5Nb0.48W0.02)(2)O-9 powders (SBTN-W) were prepared by the polymeric precursor method. The influence of annealing temperature on the phase formation and specific surface area was evaluated. TG/DTA associated with X-ray diffraction (XRD) analyses showed the formation of perovskite phase at around 500-600 degrees C. An orthorhombic structure with A21am space group was identified by Rietveld refinement. BET analysis revealed that the specific surface area reduces with increasing thermal annealing. SEM micrographies showed grains in an almost-spherical morphology with the presence of agglomerates. (C) 2006 Elsevier B.V. All rights reserved.

Crystallization of amorphous GaAs films prepared onto different substrates

This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm were grown on c-Si and glass substrates. The crystallization process is less effective for samples deposited on c-Si. This could be due to the ordering in the first layers of the film imposed by the oriented Si substrates. We propose that this ordering makes the growth of crystallites in these films more restrained than the growth occurring in the completely amorphous films on glass substrates. © 2002 Elsevier Science B.V. All rights reserved.

Nucleation and crystallization of titania nanoparticles in silica titania planar waveguides: A study by low frequency Raman scattering

SiO2 (1-x) - TiO2 (x) waveguides, with the mole fraction x in the range 0.07 - 0.20 and thickness of about 0.4 μm, were deposited on silica substrates by a dip-coating technique. The thermal treatments at 700-900°C, used to fully densify the xerogels, produce nucleation of TiO2 nanocrystals even for the lowest TiO2 content. The nucleation of TiO2 nanocrystals and their growth by thermal annealing up to 1300°C were studied by waveguide Raman spectroscopy, for the SiO2 (0.8) - TiO2 (0.2) composition. By increasing the annealing temperature, the Raman spectrum evolves from that typical of the silica-titania glass to that of anatase, but brookite phase is dominant at intermediate temperatures. In the low. frequency region (5-50 cm-1) of the Raman spectra, acoustic vibrations of the nanocrystals are observed. From the measured line shapes, we can deduce the size distribution of the particles. The results are compared with those obtained from the line widths in the X-ray diffraction patterns. Nanocrystals with a mean size in the range 4-20 nm are obtained, by thermal annealing in a corresponding range of 800-1300°C.

Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.

Tunable plasmon resonance modes on gold nanoparticles in Er 3 +-doped germanium-tellurite glass

Relative to the Er3 +:gold-nanoparticle (Er3 +:Au-NP) axis, the polarization of the gold nanoparticle can be longitudinal (electric dipole parallel to the Er3 +:Au-NP axis) or transverse (electric dipole perpendicular to the Er3 +:Au-NP axis). For longitudinal polarization, the plasmon resonance modes of gold nanoparticles embedded in Er3 +-doped germanium-tellurite glass are activated using laser lines at 808 and 488 nm in resonance with radiative transitions of Er3 + ions. The gold nanoparticles were grown within the host glass by thermal annealing over various lengths of time, achieving diameters lower than 1.6 nm. The resonance wavelengths, determined theoretically and experimentally, are 770 and 800 nm. The absorption wavelength of nanoparticles was determined by using the Frohlich condition. Gold nanoparticles provide tunable emission resulting in a large enhancement for the 2H11/2 → 4I13/2 (emission at 805 nm) and 4S 3/2 → 4I13/2 (emission at 840 nm) electronic transitions of Er3 + ions; this is associated with the quantum yield of the energy transfer process. The excitation pathways, up-conversion and luminescence spectra of Er3 + ions are described through simplified energy level diagrams. We observed that up-conversion is favored by the excited-state absorption due to the presence of the gold nanoparticles coupled with the Er3 + ions within the glass matrix. © 2013 Elsevier B.V.

Investigação de propriedades de filmes finos de Al2O3 para aplicação em dispositivos eletrônicos

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Investigação das propriedades ópticas e elétricas em alexandrita natural e sintética

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigação de propriedades de filmes finos de Sn'O IND. 2' e 'Al IND. 2''O IND. 3' para aplicação em dispositivos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)