58 resultados para metal doped TiO2


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The understanding and control of ferromagnetism in diluted magnetic semiconducting oxides (DMO) is a special challenge in solid-state physics and materials science due to its impact in magneto-optical devices and spintronics. Several studies and mechanisms have been proposed to explain intrinsic ferromagnetism in DMO compounds since the theoretical prediction of room-temperature ferromagnetism. However, genuine and intrinsic ferromagnetism in 3d-transition metal-doped n-type ZnO semiconductors is still a controversial issue. Furthermore, for DMO nanoparticles, some special physical and chemical effects may also play a role. In this contribution, structural and magnetic properties of sonochemically prepared cobalt-doped ZnO nanoparticles were investigated. A set of ZnO samples was prepared varying cobalt molar concentration and time of ultrasonic exposure. The obtained results showed that single phase samples can be obtained by the sonochemical method. However, cobalt nanoclusters can be detected depending on synthesis conditions. Magnetic measurements indicated a possible ferromagnetic response, associated to defects and cobalt substitutions at the zinc site by cobalt. However, ferromagnetism is depleted at higher magnetic fields. Also, an antiferromagnetic response is detected due to cobalt oxide cluster at high cobalt molar concentrations. © 2012 Springer Science+Business Media, LLC.

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Pure and scandium doped-TiO2 thin films were prepared by the sol-gel process and coated by dip coating. The effects of scandium on the phase formation, optical properties and photoactivity of the TiO2 thin films were investigated. The lattice parameters and the crystallinity of the anatase phase, characterized by the Rietveld method, demonstrated that scandium doping affected the structural parameters and crystallinity of the films, modifying the absorption edge. A direct correlation was found between band gap energy and photodegradation efficiency, with lower values of band gap energy augmenting this efficiency. Moreover, a significant improvement in the catalyst's photodegradation efficiency was attained with a scandium concentration of 5.0 mol%. © 2007 Springer Science+Business Media, LLC.

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The Polymeric Precursor Method has proved suitable for synthesizing reactive powders using low temperatures of calcination, especially when compared with conventional methods. However, during the thermal decomposition of the polymeric precursor the combustion event can be releases an additional heat that raises the temperature of the sample in several tens of degrees Celsius above the set temperature of the oven. This event may be detrimental to some material types, such as the titanium dioxide semiconductor. This ceramic material has a phase transition at around 600 ° C, which involves the irreversible structural rearrangement, characterized by the phase transition from anatase to rutile TiO2 phase. The control of the calcination step then becomes very important because the efficiency of the photocatalyst is dependent on the amount of anatase phase in the material. Furthermore, use of dopant in the material aims to improve various properties, such as increasing the absorption of radiation and in the time of the excited state, shifting of the absorption edge to the visible region, and increasing of the thermal stability of anatase. In this work, samples of titanium dioxide were synthesized by the Polymeric Precursor Method in order to investigate the effect of Fe (III) doping on the calcination stages. Thermal analysis has demonstrated that the Fe (III) insertion at 1 mol% anticipates the organic decomposition, reducing the combustion event in the final calcination. Furthermore, FTIR-PAS, XRD and SEM results showed that organic matter amount was reduced in the Fe (III)-doped TiO2 sample, which reduced the rutile phase amount and increased the reactivity and crystallinity of the powder samples.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Multicolor and white light emissions have been achieved in Yb3+, Tm3+ and Ho3+ triply doped heavy metal oxide glasses upon laser excitation at 980 nm. The red (660 nm), green (547 nm) and blue (478 nm) up conversion emissions of the rare earth (RE) ions triply doped TeO2-GeO2-Bi2O3-K2O glass (TGBK) have been investigated as a function of the RE concentration and excitation power of the 980 nm laser diode. The most appropriate combination of RE in the TGBK glass host (1.6 wt% Yb2O3, 0.6 wt% Tm2O3 and 0.1 wt% Ho2O3) has been determined with the purpose to tune the primary colors (RGB) respective emissions and generate white light emission by varying the pump power. The involved infrared to visible up conversion mechanisms mainly consist in a three-photon blue up conversion of Tm3+ ions and a two-photon green and red up conversions of Ho3+ ions. The resulting multicolor emissions have been described according to the CIE-1931 standards. (C) 2011 Elsevier B.V. All rights reserved.

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We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sri, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.

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Upconversion fluorescence emission of Er3+/Yb3+-doped Bi2O3-Na2O-Nb2O5-GeO2 heavy metal glass samples excited at 1.06 mu m is experimentally investigated. The results reveal the existence of intense emission bands centered around 520, 545, and 655 nm. The germano-niobate based host glass presents high transparency in the region of 400-2700 nm, the capability of incorporating high dopant concentrations, high melting temperature, and large resistance to atmospheric moisture. The observed intensity of the green fluorescence emission, suggested that the niobium based host glass material plays an important role in the efficiency of the upconversion process. Emission lines centered at 425, 483, 503, 608, and 628 nm were also observed. (C) 1997 American Institute of Physics.

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a-b axis-oriented, lanthanum doped Bi4Ti3O12 (BLT) thin films with a TiO2 rutile buffer layer deposited on Pt/Ti/SiO2/Si substrates were grown by the soft chemical method. Butterfly dielectric behavior has been achieved and can be ascribed to the ferroelectric domain switching. The remanent polarization and the coercive voltage for the film deposited on TiO2 buffer layer were 22.2 mu C/cm(2) and 1.8 V, respectively. Random-oriented BLT films showed a reduction in switching polarization when compared to the a-b axis-oriented films. Due to the excellent physical properties, these films are a promising candidate for use in lead-free applications in ferroelectric devices. (c) 2006 American Institute of Physics.

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A study was made on the effect of the addition of BaO (0.025-0.05 mol%) and Bi2O3 (0.025-0.05 mol%) to the TiO2.Ta2O5.MnO2 material. The samples were characterized by X-ray diffraction, and current-voltage measurements were accomplished for determination of the nonlinear coefficient. An analysis was made to evaluate the microstructural characteristics of the materials. The most appropriate sintering conditions for the materials were analyzed with the purpose of obtaining the best nonlinear coefficient associated with the smallest breakdown electric field. After sintering at 1400 degreesC for 2 h, a low-voltage (30 V cm(-1)) varistor was obtained, which, however, presented a low nonlinear coefficient (6). It was found that the sintering conditions must be controlled in order to improve the electrical properties of these materials. (C) 2004 Elsevier B.V. All rights reserved.

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This work describes the construction and application of two amperometric sensors for sensitive UV-filter determination. The sensors were prepared using stainless steel electrodes in which polyaniline (PANI) was electrochemically polymerized in the presence of nickel (NiPcTS) or iron (FePcTS) tetrasulfonated phthalocyanines. The sensor surface characterizations were carried out using atomic force microscopy (AFM). The PANI/NiPcTS sensor was selective for the chemical UV-filter p-aminobenzoic acid (PABA) and the PANI/FePcTS sensor was selective for octyldimethyl-PABA (ODP), both in a mixture of tetrahydrofuran (THF) and 0.1 mol L(-1) H(2)SO(4) at a volume ratio of 30 : 70, and with an applied potential of 0.0 mV vs. Ag vertical bar AgCl. A detailed investigation of the selectivity was carried out for both sensors, in order to determine their responses for ten different UV filters. Finally, each sensor was successfully applied to PABA or ODP quantification in sunscreen formulations and water from swimming pools.

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From Electron Spin Resonance (ESR) data in pressed pellets of BF4 - doped Poly(3-methylthiophene) (P3MT) we obtained simultaneously the paramagnetic susceptibility and. the microwave conductivity. We observed a transition from a high-temperature insulator state to a room-temperature metallic state. Around 240K. evidence of a Peierls transition is observed, but if the sample is slowly cooled, this transition is partially suppressed. DC conductivity data taken with the sample quenched to 79 K show a non-linear I-V response for very small electric fields, suggesting depinning of Charge-Density Wave (CDW). The data for heating and cooling the system above room temperature, indicate the formation of bipolarons.

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Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

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