25 resultados para field-added collection effect


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Recent studies have demonstrated that sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field, especially in the case when the magnetic field is parallel to the workpiece surface or intersects it at small angles. In this work we report the results from two-dimensional, particle-in-cell (PIC) computer simulations of magnetic field enhanced plasma immersion implantation system at different bias voltages. The simulations begin with initial low-density nitrogen plasma, which extends with uniform density through a grounded cylindrical chamber. Negative bias voltage is applied to a cylindrical target located on the axis of the vacuum chamber. An axial magnetic field is created by a solenoid installed inside the target holder. A set of simulations at a fixed magnetic field of 0.0025 T at the target surface is performed. Secondary electron emission from the target subjected to ion bombardment is also included. It is found that the plasma density around the cylindrical target increases because of intense background gas ionization by the electrons drifting in the crossed E x B fields. Suppression of the sheath expansion and increase of the implantation current density in front of the high-density plasma region are observed. The effect of target bias on the sheath dynamics and implantation current of the magnetic field enhanced PIII is discussed. (C) 2007 Elsevier B.V. All rights reserved.

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In this work we show how to define the action of a scalar field such that the Robin boundary condition is implemented dynamically, i.e. as a consequence of the stationary action principle. We discuss the quantization of that system via functional integration. Using this formalism, we derive an expression for the Casimir energy of a massless scalar field under Robin boundary conditions on a pair of parallel plates, characterized by constants c(1) and c(2). Some special cases are discussed; in particular, we show that for some values of cl and c(2) the Casimir energy as a function of the distance between the plates presents a minimum. We also discuss the renormalization at one-loop order of the two-point Green function in the philambda(4) theory subject to the Robin boundary condition on a plate.

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Although drought and defoliation stress have been shown to reduce soybean [Glycine max (L.). Merr.] yield, little information has been published regarding their effects on soybean seed quality. Field experiments were conducted in 1986, 1987, and 1989 to evaluate the effect of drought and defoliation (1989 only) stress during soybean seed development on seed germination and vigor. Essex (MG [maturity group] V) and Union (MG III) were grown in 1986 and 1987, and Harper (MG III) and McCall (MG 00) in 1989. Moisture treatments were either well watered or drought stressed during seed development (R5 to R7). In 1989, a total defoliation treatment was also imposed at R6 as an additional stress factor. There were significant reductions in yield and yield components following drought stress in all 3 yr and following defoliation in 1989. Leaf conductance and transpiration also decreased in the drought stress treatments. There was no effect of drought stress on seed germination or seed vigor as measured by accelerated aging germination and the cold test across the four cultivars (determinate and indeterminate) and 3 yr. In 1989 slight changes in 3-d germination and conductivity occurred for some drought stress treatments. Most of this response, however, was related to increased occurrence of hard seed, which does not represent an indication of a change in vigor. Seed germination and vigor were significantly reduced for small, flat, shriveled, and underdeveloped seeds that only occurred following defoliation. These seeds represented a small portion of the seed lot that would normally be removed during conditioning. The data suggest that drought stress would have no effect on seed germination or vigor, unless the stress was severe enough to produce shriveled, flat, underdeveloped seeds.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Sewage sludge produced by the SABESP wastewater treatment plant (Companhia de Saneamento Básico do Estado de São Paulo), located in Barueri, SP, Brazil, may contain high contents of nickel (Ni), increasing the risk of application to agricultural soils. An experiment was carried out under field conditions in Jaboticabal, SP, Brazil, with the objective of evaluating the effects on soil properties and on maize plants of increasing rates of a sewage sludge rich in Ni that had been applied for 6 consecutive years. The experiment was located on a Typic Haplorthox soil, using an experimental design of randomized blocks with four treatments (rates of sewage sludge) and five replications. At the end of the experiment the accumulated amounts of sewage sludge applied were 0.0, 30.0, 60.0 and 67.5 t ha-1. Maize (Zea mays L.) was the test plant. Soil samples were collected 60 d after sowing at depths of 0-20 cm for Ni studies and from 0 to 10 cm and from 10 to 20 cm for urease studies. Sewage sludge did not cause toxicity or micronutrient deficiencies to maize plants and increased grain production. Soil Ni appeared to be associated with the most stable fractions of the soil organic matter and was protected against strong extracting solutions such as concentrated and hot HNO3 and HCl. Ni added to the soil by sewage sludge increased the metal concentration in the shoots, but not in the grain. The Mehlich 3 extractor was not efficient to evaluate Ni phytoavailability to maize plants. Soil urease activity was increased by sewage sludge only in the layer where the residue was applied. © 2006 Elsevier Ltd. All rights reserved.

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Objective In studies on Candida albicans adhesion to surfaces, diverse protocols have been used for collection and preparation of saliva samples. Thus, this study investigated whether variations in the centrifugation parameters and number of donors of saliva would influence the adhesion of C. albicans to a denture base resin. Methods Resin acrylic samples (n = 72) were made and then divided into four groups: (a) control – specimens were left without preconditioning in saliva; (b) three experimental groups, in which the specimens were preconditioned with saliva collected from 15 volunteers and centrifuged at 12 000 g for 5 min (G1); from 15 volunteers and centrifuged at 18 000 g for 30 min (G2); and from one volunteer and centrifuged at 12 000 g for 5 min (G3). Candida adhesion was evaluated by both the 2,3-bis(2-methoxy-4-nitro-5-sulfophenyl)-5-[(phenylamino) carbonyl]-2H-tetrazolium hydroxide (XTT) reduction method and crystal violet staining. Data were analyzed by one-way analyses of variance (P = 0.05). Results For XTT reduction assay, groups G2, G3, and control were not significantly different, whereas group G1 showed significantly higher absorbance value than control. For crystal violet staining there were no significant differences among all groups. Conclusion Variations in the centrifugation parameters and number of donors of saliva may influence C. albicans adhesion to denture base resins.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.