Self-assembled FePt nanocrystals with large coercivity: Reduction of the fcc-to-L1(0) ordering temperature

Herein we report the synthesis and properties of Fe55Pt45 nanoparticles, both monodisperse and self-assembled into hexagonal close-packed and cubic arrays of 4.0 +/- 0.2 nm size in an L1(0) structure, obtained by a modified polyol process. The new synthetic route improved the control over the particle composition, thereby reducing the temperature required to convert from face-centered cubic (fcc) to face-centered tetragonal (fct) phase by some 30-50 degrees C without additives. Annealing at 550 degrees C for 30 min converts the self-assembled nanoparticles into ferromagnetic nanocrystals with large coercivity, H-C = 11.1 kOe. Reducing the fcc-to-fct (L1(0)) ordering temperature avoided particle coalescence and decreased the loss in particle positional order without compromising the magnetic properties, as is generally observed when additives are used.

Anisotropic growth of oxide nanocrystals: Insights into the rutile TiO2 phase

In this work, we report the synthesis of titanium oxide nanocrystals, especially the rutile TiO2 phase with nanorod morphology, by a method based on peroxotitanium complex decomposition. The results indicate that the anisotropic morphology reported for rutile TiO2 nanocrystals is related to the oriented attachment process. Despite the predominance of rutile nanocrystals at longer treatment times, the nanocrystals were obtained also in the anatase type, according to the degradation time adopted. XANES results evidenced the absence of structural correlation between the peroxytitanium complex and phase evolution, and the coexistence of the two phases strongly suggests a correlation of the oriented attachment mechanism and the rutile phase stabilization.

Negative temperature coefficient thermistor based on Bi3Zn2Sb3O14 ceramic: An oxide semiconductor at high temperature

Bi1.5ZnSb1.5O7 dielectric ceramic with pyrochlore structure was investigated by impedance spectroscopy from 400 to 750 degreesC. Pyrochlore was synthesized by the polymeric precursor method, a chemical synthesis route derived from Pechini's method. The grain or bulk resistance exhibits a sensor temperature characteristic, being a thermistor with a negative temperature coefficient (NTC). Only a single region was identified on the resistance curve investigated. The NTC thermistor characteristic parameter (beta) is equal to 7140 degreesC, in the temperature range investigated. The temperature coefficient of the resistance (alpha) was derived, being equal to -4.46x10(-2) degreesC(-1) at 400 degreesC. The conduction mechanism and relaxation are discussed. (C) 2003 American Institute of Physics.

A semiconductor strain gage tactile transducer

This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured with stainless steel and has small dimensions ( 4 min diameter and I min thickness). It is light and suitable to connect to the finger pads. It has a device that prevents its damage when forces are applied. The semiconductor strain gage was used over due its small size and high sensitivity, although it has high temperature sensitivity. Theory, design and construction details are presented the signal conditioning circuit is very simple because the semiconductor strain gage sensitivity is high. It presents linear response from 0 to 100 N, 0.5 N resolution, fall time of 7.2 ms, good repeatability, and small hysteresis. The semiconductor strain gage transducer has characteristics that can make it very useful in Rehabilitation Engineering, Robotics, and Medicine.

Photoluminescence in quantum-confined SnO2 nanocrystals: Evidence of free exciton decay

Nanocrystalline SnO2 quantum dots were synthesized at room temperature by hydrolysis reaction of SnCl2. The addition of tetrabutyl ammonium hydroxide and the use of hydrothermal treatment enabled one to obtain tin dioxide colloidal suspensions with mean particle radii ranging from 1.5 to 4.3 nm. The photoluminescent properties of the suspensions were studied. The particle size distribution was estimated by transmission electron microscopy. Assuming that the maximum intensity photon energy of the photoluminescence spectra is related to the band gap energy of the system, the size dependence of the band gap energies of the quantum-confined SnO2 particles was studied. This dependence was observed to agree very well with the weak confinement regime predicted by the effective mass model. This might be an indication that photoluminescence occurs as a result of a free exciton decay process. (C) 2004 American Institute of Physics.

Effect of partial preferential orientation and distortions in octahedral clusters on the photoluminescence properties of FeWO4 nanocrystals

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photothermal Study of Two Different Nanofluids Containing SiO2 and TiO2 Semiconductor Nanoparticles

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Metal-Organic Semiconductor Nanostructures for Surface-Enhanced Raman Scattering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Phase Transformation in Titania Nanocrystals by the Oriented Attachment Mechanism: The Role of the pH Value

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Infrared-to-visible frequency upconversion in transparent glass ceramics containing trivalent-rare-earth-doped nanocrystals

In this work we report on visible upconversion emission in Er 3+-, and Ho3+-doped PbGeO3-PbF 2-CdF2-based transparent glass ceramics under 980 nm infrared excitation. In erbium-doped vitroceramic samples, blue(410 ran), green(530, and 550 nm) and red(660 nm) emission signals were generated, which were identified as due to the 2H9/2, 2H 11/2, 4S3/2, and 4F9/2 transitions to the 4I15/2 ground-state, respectively. Intense red(650 nm) upconversion emission corresponding to the 5F5 - 5I8 transition and very small blue(490 nm) and green(540 nm) signals assigned to the 5F 2,3 - 5I8 and 4S2, 5F4 - 5I8 transitions, respectively, were observed in the holmium-doped samples. The 540 nm is the dominant upconversion signal in Ho3+-doped vitroceramics under 850 nm excitation. The dependence of the upconversion processes upon pump power and doping concentration are also investigated, and the main routes for the upconversion excitation processes are also identified. The comparison of the upconversion process in transparent glass ceramics and the precursor glass was also examined and the results revealed that the former present higher upconversion efficiencies.

Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields

We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works. © 2007 Elsevier B.V. All rights reserved.

Profilometry of semiconductor components by two-colour holography with Bi12TiO20 crystals

We studied the shape measurement of semiconductor components by holography with photorefractive Bi12TiO20 crystal as holographic medium and two diode lasers emitting in the red region as light sources. By properly tuning and aligning the lasers a synthetic wavelength was generated and the resulting holographic image of the studied object appears modulated by cos2-contour fringes which correspond to the intersection of the object surface with planes of constant elevation. The position of such planes as a function of the illuminating beam angle and the tuning of the lasers was studied, as well as the fringe visibility. The fringe evaluation was performed by the four stepping technique for phase mapping and through the branch-cut method for phase unwrapping. A damage in an integrated circuit was analysed as well as the relief of a coin was measured, and a precision up to 10 μm was estimated. © 2009 SPIE.