Delineamentos ótimos para experimentos farmacocinéticos

Pós-graduação em Biometria - IBB

Análise da estabilidade estática de tensão de sistemas elétricos de potência usando uma rede neural baseada na teoria da ressonância adaptativa

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Aeroelastic stability analysis using linear matrix inequalities

The present work describes an alternative methodology for identification of aeroelastic stability in a range of varying parameters. Analysis is performed in time domain based on Lyapunov stability and solved by convex optimization algorithms. The theory is outlined and simulations are carried out on a benchmark system to illustrate the method. The classical methodology with the analysis of the system's eigenvalues is presented for comparing the results and validating the approach. The aeroelastic model is represented in state space format and the unsteady aerodynamic forces are written in time domain using rational function approximation. The problem is formulated as a polytopic differential inclusion system and the conceptual idea can be used in two different applications. In the first application the method verifies the aeroelastic stability in a range of air density (or its equivalent altitude range). In the second one, the stability is verified for a rage of velocities. These analyses are in contrast to the classical discrete analysis performed at fixed air density/velocity values. It is shown that this method is efficient to identify stability regions in the flight envelope and it offers promise for robust flutter identification.

A theoretical analysis of Sb5+ incorporation in highly doped SnO2 matrix

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP hybrid functional level in order to study the doping of SnO2 with pentavalent Sb5+. The 72-atom 2x3x2 supercell SnO2 (Sn24O48) was employed in the calculations. For the SnO2:4%Sb , one atom of Sn was replaced by one Sb atom. For the SnO2:8%Sb, two atoms of Sn were replaced by two Sb atoms. The Sb doping leads to an enhancement in the electrical conductivity of this material, because these ions substitute Sn4+ in the SnO2 matrix, leading to an electronic density rise in the conduction band, due to the donor-like behavior of the doping atom. This result shows that the bandgap magnitude depends on the doping concentration, because the energy value found for SnO2:4%Sb was 2.8eV whereas for SnO2:8%Sb it was 2.7eV. It was also verified that the difference between the Fermi level and the bottom of the conduction band is directly related to the doping concentration. - See more at: http://www.eurekaselect.com/117255/article#sthash.Z5ezhCQD.dpuf