49 resultados para Quantum Hall effect


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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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In this paper, we will present an overview of the smart grid defining the three main systems that compose it: smart infrastructure system, smart management system and smart protection system. We will conceptualize a functionality of smart management system, the conservative voltage reduction, citing its benefits and its history of application. And, finally, we'll cover a test in which we reduce the nominal voltages on incandescent bulbs, CFL and LED, in the context of residential lighting, and on LED and HPS, in the context of public lighting. The test aims to check whether the voltage reduction adversely affects sources of lighting by measuring the temperature manually with a thermal imaging camera FLIR and illuminance with a LUX meter. The set of power factor, total harmonic distortion, and input power values will be collected automatically through the power quality Analyzer Fluke 345 with a probe Fluke Hall Effect Current. For residential lighting, it was found that both CFL and LED had good performance with the smallest variations in illuminance. Between both, the LED source had the lowest harmonics and the lowest power consumption, on the other hand incandescent bulbs had a bad performance as expected. Public light sources also had a good performance and obtained power factors within the standards, as opposed to the CFL and LED residential sources. The data collected clearly shows the feasibility for nominal voltage reductions. Even with small reductions, there are possibilities of savings which can be passed on to the utilities and consumers

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We comment on the recent results [Phys. Rev. B 70, 235314 (2004)] showing the dispersion relations of single-particle and collective excitations in quantum wires in the presence of the Rashba spin-orbit interaction (SOI). We claim that those calculations performed in the absence of SOI, and used as a strong reference to the interacting case, are unlikely to be correct. We show the correct omega-q plane of the system in the absence of Rashba SOI.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.

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In non-extensive statistical mechanics [14], it is a nonsense statement to say that the entropy of a system is extensive (or not), without mentioning a law of composition of its elements. In this theory quantum correlations might be perceived through quantum information process. This article, that is an extension of recent work [4], is a comparative study between the entropies of Von Neumann and of Tsallis, with some implementations of the effect of entropy in quantum entanglement, important as a process for transmission of quantum information. We consider two factorized (Fock number) states, which interact through a beam splitter bilinear Hamiltonian with two entries. This comparison showed us that the entropies of Tsallis and Von Neumann behave differently depending on the reflectance of the beam splitter. © 2011 Academic Publications.

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The technologies are rapidly developing, but some of them present in the computers, as for instance their processing capacity, are reaching their physical limits. It is up to quantum computation offer solutions to these limitations and issues that may arise. In the field of information security, encryption is of paramount importance, being then the development of quantum methods instead of the classics, given the computational power offered by quantum computing. In the quantum world, the physical states are interrelated, thus occurring phenomenon called entanglement. This study presents both a theoretical essay on the merits of quantum mechanics, computing, information, cryptography and quantum entropy, and some simulations, implementing in C language the effects of entropy of entanglement of photons in a data transmission, using Von Neumann entropy and Tsallis entropy.

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The electric current and the magnetoresistance effect are studied in a double quantum-dot system, where one of the dots QD(a) is coupled to two ferromagnetic electrodes (F-1; F-2), while the second QD(b) is connected to a superconductor S. For energy scales within the superconductor gap, electric conduction is allowed by Andreev reflection processes. Due to the presence of two ferromagnetic leads, non-local crossed Andreev reflections are possible. We found that the magnetoresistance sign can be changed by tuning the external potential applied to the ferromagnets. In addition, it is possible to control the current of the first ferromagnet (F-1) through the potential applied to the second one (F-2). We have also included intradot interaction and gate voltages at each quantum dot and analyzed their influence through a mean field approximation. The interaction reduces the current amplitudes with respect to the non-interacting case, but the switching effect still remains as a manifestation of quantum coherence, in scales of the order of the superconductor coherence length. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723000]

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We discuss the decay of accelerated protons and illustrate how the Fulling-Davies-Unruh effect is indeed mandatory to maintain the consistency of standard Quantum Field Theory. The confidence level of the Fulling-Davies-Unruh effect must be the same as that of Quantum Field Theory itself.

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The discrete phase space approach to quantum mechanics of degrees of freedom without classical counterparts is applied to the many-fermions/quasi-spin Lipkin model. The Wi:ner function is written for some chosen states associated to discrete angle and angular momentum variables, and the rime evolution is numerically calculated using the discrete von Neumnnn-Liouville equation. Direct evidences in the lime evolution of the Wigner function are extracted that identify a tunnelling effect. A connection with a SU(2)-based semiclassical continuous approach to the Lipkin model is also presented.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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The influence of bulk light absorption on running photorefractive holograms is investigated. By solving the coupled wave equations we prove that the beam intensities, but not the beam phases, can be calculated by averaging the coupling constant over the crystal thickness. We show the importance of the effect by calculating the dielectric relaxation time at the crystal front, and from that the quantum efficiency from a feedback-controlled experiment with a 2.05 mm thick BTO crystal.We propose to simulate the effect of bulk light absorption by a rude estimate of the average dielectric relaxation time which is related in a simple way to the dielectric relaxation time at the crystal front, in doing so an error of less than 10% is introduced.

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The effect of Cr2O3 on the electrical properties of the multicomponent ZnO varistors was investigated using voltage-current curves and impedance spectroscopy. The structure and morphological modifications were analysed by X-ray diffraction and scanning electron microscopy, respectively. It was observed in samples with addition 0.1 mol% Cr2O3 that there was an improvement in the electrical properties of the varistors, but the increase in concentration had a deleterious effect on the potential barrier at the grain boundary. The excess Cr2O3 segregates at the grain-boundary region and increases the donor concentration, leading to a higher leakage current.