24 resultados para Integrated applications


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This paper presents a three-phase integrated inverter suitable for stand-alone and grid-connected applications. Furthermore, the utilization of the special features of the tri-state coupled with the new space vector modulation allows the converter to present an attractive degree of freedom for the designing of the controllers. Additionally, the control is derived through dq0 transformation, all the system is described and interesting simulation results are available to confirm the proposal. © 2012 IEEE.

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Two-stage isolated converters for photovoltaic (PV) applications commonly employ a high-frequency transformer on the DC-DC side, submitting the DC-AC inverter switches to high voltages and forcing the use of IGBTs instead of low-voltage and low-loss MOSFETs. This paper shows the modeling, control and simulation of a single-phase full-bridge inverter with high-frequency transformer (HFT) that can be used as part of a two-stage converter with transformerless DC-DC side or as a single-stage converter (simple DC-AC inverter) for grid-connected PV applications. The inverter is modeled in order to obtain a small-signal transfer function used to design the PResonant current control regulator. A high-frequency step-up transformer results in reduced voltage switches and better efficiency compared with converters in which the transformer is used on the DC-DC side. Simulations and experimental results with a 200 W prototype are shown. © 2012 IEEE.

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This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2-Nb 2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2-xNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides exhibited uniform refractive index distribution across the thickness, efficient light injection at 1538 nm, and low losses at 632 and 1538 nm. The band-gap values lied between 4.12 eV and 3.55 eV for W1-W5, respectively, showing an excellent transparency in the visible and near infrared region for the waveguides. Fourier Transform Infrared (FTIR) Spectroscopy analysis evidenced SiO2-Nb2O5 nanocomposite formation with controlled phase separation in the films. The HRTEM and XRD analyses revealed Nb2O5 orthorhombic T-phase nanocrystals dispersed in a silica-based host. Photoluminescence (PL) analysis showed a broad band emission at 1531 nm, assigned to the 4I13/2 → 4I15/2 transition of the Er3+ ions present in the nanocomposite, with a full-width at half medium of 48-68 nm, depending on the niobium content and annealing. Hence, these waveguides are excellent candidates for application in integrated optics, especially in EDWA and WDM devices. © 2012 Elsevier B.V. All rights reserved.

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This paper presents a three-phase integrated inverter suitable for stand-alone and/or grid-connected applications. The usage of the special features of the tri-state coupled with the special space vector modulation allows the inverter to present an attractive degree of freedom for the controllers' design, i.e. input and output can be controlled independently. Additionally all controllers are based on dq0 transformation, the system are described and interesting simulation results are available to confirm the proposal. Finally, this paper presents experimental evaluations of the inverter feeding a three-phase stand-alone load confirming the remarkable features of the decoupling control. © 2013 IEEE.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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A CMOS/SOI circuit to decode PWM signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a double-integration concept and does not require dc filtering. Nonoverlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 mu m single-metal SOI fabrication process and has an effective area of 2mm(2) Typically, the measured resolution of encoding parameter a was better than 10% at 6MHz and V-DD=3.3V. Stand-by consumption is around 340 mu W. Pulses with frequencies up to 15MHz and alpha = 10% can be discriminated for V-DD spanning from 2.3V to 3.3V. Such an excellent immunity to V-DD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)