Investigation of temperature influence on photo-induced conductivity in n-type AlxGa1-xAs

We present conductance as function of temperature (G×T) under influence of monochromatic light in the range 0.5-1.5 μm for direct as well as indirect bandgap n-type AlxGa1-xAs. Results obtained below 60 K in indirect bandgap sample show the presence of another level of trapping, besides the DX centre, probably a X-valley effective mass state. In direct bandgap samples, these G×T curves show that above bandgap light increases conductivity to higher values than at room temperature and below bandgap light is not enough to avoid trapping. Photoconductivity spectra in indirect bandgap AlxGa1-xAs show that above ≅120 K, the absence of persistent photoconductivity contributes for a very clean spectrum. The mobility of AlxGa1-xAs is modelled considering dipole scattering. Data of transient decay of persistent photoconductivity is simulated using this approach.

The two-impurity Anderson model: An effective medium approach

The two-impurity Anderson model is solved within a effective medium approach. All impurity parameters are modelled via Slater atomic orbitals. Impurity spectral densities and spin correlation functions are readily computed. Results are presented for the zero temperature, half-filled case. © 2002 Elsevier Science B.V. All rights reserved.

Effects of high temperature plasma immersion ion implantation on wear resistance of Ti-Si-B sintered alloys

Although titanium and its alloys own good mechanical properties and excellent corrosion resistance, these materials present poor tribological properties for specific applications that require wear resistance. In order to produce wear-resistant surfaces, this work is aimed at achieving improvement of wear characteristics in Ti-Si-B alloys by means of high temperature nitrogen plasma immersion ion implantation (PIII). These alloys were produced by powder metallurgy using high energy ball milling and hot pressing. Scanning electron microscopy (SEM) and X-ray diffraction identified the presence of α-titanium, Ti6Si2B, Ti5Si3, TiB and Ti3Si phases. Wear tests were carried out with a ball-on-disk tribometer to evaluate the friction coefficient and wear rate in treated and untreated samples. The worn profiles were measured by visible light microscopy and examined by SEM in order to determine the wear rates and wear mechanisms. Ti-7.5Si-22.5B alloy presented the highest wear resistance amongst the untreated alloys produced in this work. High temperature PIII was effective to reduce the wear rate and friction coefficient of all the Ti-Si-B sintered alloys. © 2013 Elsevier B.V.

Study of pK Values and Effective Dielectric Constants of Ionizable Residues in Pentapeptides and in Staphylococcal Nuclease (SNase) Using a Mean-Field Approach

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence emission at room temperature in zinc oxide nano-columns

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Ability of Salmonella spp. to Produce Biofilm Is Dependent on Temperature and Surface Material

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Loss of the Ability to Control Right-to-Left Shunt Does Not Influence the Metabolic Responses to Temperature Change or Long-Term Fasting in the South American Rattlesnake Crotalus durissus

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Importance of asymptotic freedom for the pseudocritical temperature in magnetized quark matter

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Thermal effective Lagrangian of generalized electrodynamics in static gravitational fields

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)