Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates

We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In0.15Ga0.85As/GaAs quantum wells grown on top of nominal (001) and 2°-, 4°-and 6°-off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arrhenius plot of the integrated PL intensity as a function of the inverse of the sample temperature. In the first model, we considered equal escape probability for electrons and holes. In the second one, we assumed that a single type of carrier can escape from the well. At high temperature, the first model fits the experimental data well, whereas, between 50 K and 100 K, the second model has to be taken into account to describe the data. We observed that the escape activation energy depends on the misorientation angle. An unusual behavior was noted when the full width at half maximum of the photoluminescence main emission was plotted as a function of the sample temperature. We showed that the escape process of the less-confined carriers drives this behavior. © 1999 Academic Press.

Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/Ga0.7Al0.3As quantum wells

In this work we analyze the relation between the interface microroughness and the full width at half maximum (FWHM) of the photoluminescence (PL) spectra for a GaAs/Ga0.7Al0.3As multiple quantum well (QW) system. We show that, in spite of the complex correlation between the microscopic interface-defects parameters and the QW optical properties, the Singh and Bajaj model [Appl. Phys. Lett. 44, 805 (1984)] provides a good quantitative description of the excitonic PL-FWHM. ©1999 The American Physical Society.

Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields

We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works. © 2007 Elsevier B.V. All rights reserved.

Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells

In this work the electronic structure of undoped AlGaAs/GaAs wide parabolic quantum wells (PQWs) with different well widths (1000 and 3000 ) were investigated by means of photoluminescence (PL) measurements. Due to the particular potential shape, the sample structure confines photocreated carriers with almost three-dimensional characteristics. Our data show that depending on the well width thickness it is possible to observe very narrow structures in the PL spectra, which were ascribed to emissions associated to the recombination of confined 1s-excitons of the parabolic potential wells. From our measurements, the exciton binding energies (of a few meV) were estimated. Besides the exciton emission, we have also observed PL emissions associated to electrons in the excited subbands of the PQWs. © 2010 IOP Publishing Ltd.

Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well

In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.

Modelo de poços quânticos para a transferência de elétrons

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural studies of AgPO3-MoO3 glasses using solid state NMR and vibrational spectroscopies

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Intersubband excitations at finite temperatures and their roles in different quasi-one-dimensional systems

We theoretically study many-body excitations in three different quasi-one-dimensional (Q1D) electron systems: (i) those formed on the surface of liquid Helium; (ii) in two coupled semiconductor quantum wires; and (iii) Q1D electrons embedded in polar semiconductor-based quantum wires. Our results show intersubband coupling between higher subbands and the two lowest subbands affecting even the lower energy intersubband plasmons on the liquid Helium surface. Concerning the second system, we show a pronounced extra peak appearing in the intersubband impurity spectral function for temperatures as high as 20 K. We finally show coupled intersubband plasmon-phonon modes surviving for temperatures up to 300 K.

Estudo das propriedades ópticas de poços quânticos de InGaAsN/GaAs para aplicação em dispositivos optoeletrônicos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeito do tratamento térmico nas propriedades ópticas de pontos quânticos emitindo na faixa espectral de 1,3 a 1,5 üm

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Equações de taxa aplicadas na modelagem de dispositivos fotodetectores baseados em poços quânticos

In this work, it is presented a novel method for calculating some intrinsic parameters such as capture mean time, thermic emission mean time, capture probability and noise gain on quantum well infrared photodetectors. Such devices are built by depositing layers of semiconductors of different energy gap, forming quantum wells. The present method uses rate equations to describe the occupation of discrete states of the quantum wells, that together with noise gain equations given in literature, are solved self consistently. The input data of the method is experimental measurement of dark current (current measured with no relevant incident photon) versus applied bias. In order to validate this approach, the values obtained were compared with results from literature

Solitons in tunnel-coupled repulsive and attractive condensates

We study solitons in the condensate trapped in a double-well potential with far-separated wells, when the s-wave scattering length has different signs in the two parts of the condensate. By employing the coupled-mode approximation it is shown that there are unusual stable bright solitons in the condensate, with the larger share of atoms being gathered in the repulsive part. Such unusual solitons derive their stability from the quantum tunneling and correspond to the strong coupling between the parts of the condensate. The ground state of the system, however, corresponds to weak coupling between the condensate parts, with the larger share of atoms being gathered in the attractive part of the condensate.

Quantum coherent tunneling between two atomic-molecular Bose-Einstein condensates

We study the quantum coherent tunneling dynamics of two weakly coupled atomic-molecular Bose-Einstein condensates (AMBEC). A weak link is supposed to be provided by a double-well trap. The regions of parameters where the macroscopic quantum localization of the relative atomic population occurs are revealed. The different dynamical regimes are found depending on the value of nonlinearity, namely, coupled oscillations of population imbalance of atomic and molecular condensate, including irregular oscillations regions, and macroscopic quantum self trapping regimes. Quantum means and quadrature variances are calculated for population of atomic and molecular condensates and the possibility of quadrature squeezing is shown via stochastic simulations within P-positive phase space representation method. Linear tunnel coupling between two AMBEC leads to correlations in quantum statistics.

Macroscopic quantum tunneling and resonances in coupled Bose-Einstein condensates with oscillating atomic scattering length

We study the macroscopic quantum tunneling, self-trapping phenomena in two weakly coupled Bose-Einstein condensates with periodically time-varying atomic scattering length.The resonances in the oscillations of the atomic populations are investigated. We consider oscillations in the cases of macroscopic quantum tunneling and the self-trapping regimes. The existence of chaotic oscillations in the relative atomic population due to overlaps between nonlinear resonances is showed. We derive the whisker-type map for the problem and obtain the estimate for the critical amplitude of modulations leading to chaos. The diffusion coefficient for motion in the stochastic layer near separatrix is calculated. The analysis of the oscillations in the rapidly varying case shows the possibility of stabilization of the unstable pi-mode regime. (C) 2000 Published by Elsevier B.V. B.V. PACS: 03.75.Fi; 05.30.Jp.

Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)