Investigação de propriedades de filmes finos de Al2O3 para aplicação em dispositivos eletrônicos

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Caracterização térmica e mecânica de cerâmicas porosas com camadas de TiO2 e Al2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Formação de filmes finos de Al2O3 por anodização e seu uso em dispositivos com filmes de Poli(3-Hexiltiofeno)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Avaliação da osseointegração promovida por implantes jateados por Al2O3: análises histológica e histométrica em cães

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Vitrocerâmicas de alta resistência mecânica obtidas a partir da cristalização do sistema SiO2-Al2O3-MgO-Li2O com adição de ZrO2 e B2O3

Pós-graduação em Engenharia Mecânica - FEG

Estudo de cerâmicas de SiC e Al2O3 tratadas por expansor de plasma de nitrogênio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Study of the thermal resistance of alpha-phase aluminum oxide (alpha-Al2O3) films deposited on the paper substrate

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo comparativo do desgaste de ferramentas cerâmicas de Al2O3 em relação às de B4C + TiB2

Due to the high value of the bill that the Brazilian has been paying, one of the most expensive in the world, is becoming increasingly attractive the option for renewable energy in form of distributed micro and minigeneration. In other words, the renewable energy sources are becoming attractive not only because of environmental concerns, but also due to economic issues. This has become even more relevant and concrete after approval of rules by National Agency of Electric Energy (ANEEL) on 4/17/2012 (Normative Resolution n ° 482/2012 of 04/17/2012) aimed at reducing barriers to installation of small distributed generation, including microgeneration, with up to 100 kW of power, and minigeneration, 100 kW to 1 MW. The Normative Resolution n ° 482/2012 creates the Energy Clearing System, which allows consumers to install small generators in its consumer unit and exchange energy with the local distributor. The rule applies to generators that use renewable sources of energy (hydro, solar, biomass, wind and cogeneration qualified). In this context, this paper presents a technical and economic analysis of installing a residential microgenerating plant composed of photovoltaic cells, solar panels and small wind turbines

Corrosion prevention for Al2O3/SiC/C/MgAl2O4 based ceramics by means of impregnation with cerium-carrying solution

A cerium-carrying solution was developed so as to aprtially fill the open porosity of Al2O3/SiC/C/MgAl2O4 based refractory lining microstructure used in torpedo ladles, thereby enhancing wear resistance. The protection mchanism was cleared up and introduced from the impregnation technique using a cerium-carrying solution.

Structural and optical properties of Er3+ doped SiO2-Al2O3-GeO2 compounds prepared by a simple route

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Properties of glass-ceramics obtained from crystallization of the SiO2-Al2O3-MgO-Li2O system with addition of ZrO2

This paper presents the study results with glass-ceramics obtained from base glass (MgO-Al2O3- SiO2-Li2O system) with addition of ZrO2 as nucleating agent. The glass was melted at 1650 degrees C for 3 h and at a heating rate of 10 degrees C/min. The molten glass was poured into a graphite mold to obtain monolithic samples and also in water in order to obtain particulate material. Such material was grinded and then pressed by both uniaxial and isostatic pressing methods before being sintered. Both the monolithic and pressed samples were performed under two different conditions of heat treatment so that their nucleation and crystallization occurred. In the first one, the samples were heated to 1100 degrees C with a heating rate of 10 degrees C/min. In the second one, there was an initial heating rate of 10 degrees C/min up to 780 degrees C, which was kept for 5 minutes. After that, the samples were heated to 1100 degrees C at a heating rate of 1 degrees C/min. Microhardness analyses showed that base glass presented values around 7.0 GPa. The glass-ceramics obtained from the powder sintering showed microhardness values lower than those obtained from monolithic samples. The highest hardness values were observed in the samples which were treated with two heating rates, whose values were around 9.2 +/- 0.5 GPa. Moreover, the glass-ceramics which were produced with an only heating rate, presented values around 7.1 +/- 0.2 GPa, very close to those observed in the base glass.

Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.