Effect of thermal treatment temperature on the crystallinity and morphology of LiTaO3 thin films prepared from polymeric precursor method

Lithium tantalate thin films (LiTaO3) with (50:50) stoichiometry were prepared by spin coating method using a polymeric organic solution. The films were deposited on silicon (100) substrates with 4 layers. The substrates were previously cleaned and then the solution of lithium tantalate was deposited by adjusting the speed at 5000 rpm. The thin films deposited were thermally treated from 350 to 600degreesC for 3 hours in order to study the influence of the thermal treatment temperature on the crystallinity, microstructure, grain size and roughness of the final film. X-ray diffraction (XRD) results showed that the films are polycrystalline and secondary phases free. The thickness of films was observed by scanning electron microscopy (SEM). The atomic force microscopy (AFM) studies showed that the grain size and roughness are strongly influenced by thermal treatment.

Low temperature crystallization of SrBi2Ta2O9 thin films using microwave oven

SrBi2Ta2O9 thin films, produced by the polymeric precursor method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films thus obtained are crack-free, well-adhered, and fully crystallized, even when treated at 600 degreesC for 10 min. The microstructure displayed a polycrystalline nature with an elongate grain size comparable to the films obtained by the conventional treatment. The dielectric constant values are 240, 159 and 67, for the films treated at 600 degreesC, 650 degreesC and 700 degreesC, respectively, when the films are placed directly on the SiC susceptor. Electrical measurements revealed that the increase of the temperature treatment to 700 degreesC causes a complete loss of ferroelectricity due to degradation of the bottom interface. A 4 nun-ceramic wool put between the susceptor and the substrate minimizes the interface degradation leading to a dielectric constant, a dielectric loss, and a remnant polarization (2P(r)) of 181 muC/cm(2), 0.032 muC/cm(2), and 12.8 muC/cm(2), respectively, for a film treated at 750 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.

Viscoelastic behavior of persimmons dried at constant air temperature

The viscoelastic behavior of dried persimmons at different air-drying temperatures and velocities was evaluated. Air temperatures and velocities were varied according to a second-order central composite design, with temperature ranging from 40degreesC to 70degreesC and air velocity from 0.8 to 2.0 m/s. After drying, persimmons were equilibrated at four different water activities: 0.432, 0.576, 0.625 and 0.751. The rheological behavior of dried and conditioned persimmons was studied under uniaxial compression-relaxation tests. Three different rheological models were fitted to the experimental relaxation curves: Maxwell, Generalized Maxwell and Peleg and Normand. Based on the root mean square of residuals, the Generalized Maxwell model showed the best fit and a regression analysis was applied to obtain response surfaces for the model parameters. The dependence of the rheological properties on water activity was also analysed. Results showed that only the linear effect of air temperature was significant at a 5% level on the equilibrium stress and relaxation times. In a general way, these parameters increased with increasing air temperature and decreasing water activity. (C) 2004 Swiss Society of Food Science and Technology. Published by Elsevier Ltd. All rights reserved.

Experimental and theoretical investigation of the room-temperature photoluminescence of amorphized Pb(ZrTi)O-3

Ultrafine PbZr0.20Ti0.80O3 was omorphized through high-energy mechanical milling. The structural evolution through the omorphization process was accompanied by various characterization techniques, such as X-ray diffraction, Fourier-transformed IR spectroscopy (FTIR), high-resolution transmission electron microscopy (HR-TEM), and Raman spectroscopy. A strong photoluminescence was measured at room temperature for amorphized PbZr0.20Ti0.80O3, and interpreted by means of high-level quantum mechanical calculations in the density functional theory frame-work. Three periodic models were used to represent the crystalline and amorphized PbZr0.20Ti0.80O3, and they allowed the calculation of electronic properties that are consistent with the experimental data and that explain the appearance of photoluminescence.

Temperature dependence of fractal dimension of grain boundary region in SnO2 based ceramics

Fractal dimensions of grain boundary region in doped SnO2 ceramics were determined based on previously derived fractal model. This model considers fractal dimension as a measure of homogeneity of distribution of charge carriers. Application of the derived fractal model enables calculation of fractal dimension using results of impedance spectroscopy. The model was verified by experimentally determined temperature dependence of the fractal dimension of SnO2 ceramics. Obtained results confirm that the non-Debye response of the grain boundary region is connected with distribution of defects and consequently with a homogeneity of a distribution of the charge carriers. Also, it was found that C-T-1 function has maximum at temperature at which the change in dominant type of defects takes place. This effect could be considered as a third-order transition.

Temperature dependence of electron properties of Sn doped In2O3 nanobelts

This paper reports on the measurements of transport properties of high crystalline quality Sn doped In2O3 nanobelts. The samples presented metallic conduction in a large range of temperatures; however, at low temperatures, the resistivity showed a slight increase and the current-voltage curves showed a tendency to saturate even in the low-voltage range. From these observations, we discuss some arguments on the possibility of low dimensional conducting channels as the main responsible for the conduction at low temperatures. Additionally, we present an alternative technique for production of low resistance ohmic contacts, which can be further used in devices' construction. (C) 2007 Elsevier B.V. All rights reserved.

An investigation of metal oxides which are photoluminiscent at room temperature

Amorphous thin films, based on different network formers, were processed by a soft chemical process called the polymeric precursor method. The resultant amorphous metal oxides, displayed intense photoluminescence (PL) at room temperature. Heat treatment increases the PL intensity of these materials. Theoretical ab initio calculations are correlated with the observed experimental trends. (C) 2004 Elsevier B.V. All rights reserved.

Effect of pH and temperature on the immunogenicity of glycinin (Glycine max L)

Sensitive immunologic techniques for the detection of alterations that occur in protein antigens were used to evaluate the immunogenicity of soybean glycinin after isolation, heat denaturation and pH alteration. The objective was to determine the effect of these agents on the immunogenic ability of this protein fraction. Immunologic assays performed on heat-denatured glycinin up to 80 degrees C in the presence of antinative glycinin serum demonstrated that glycinin retains its immunogenic properties. Above 90 degrees C this biological property begins to disappear, with protein insolubilization and epitope modification due to the conformational changes imposed by temperature. A reduction in immunogenicity also occurred when glycinin was taken to pH 2.0 (below its pi) and pH 11.00 (above its pi) and exposed to high temperatures in the presence of native antiglycinin serum. From these data one can conclude that, at extreme pH values, intramolecular reactions may occur which, in combination with the structural disorganization caused by high temperatures, may contribute to the reduction of immunogenicity.

Low temperature annealing of amorphous gallium arsenide films

This work reports the changes in the optical properties produced by annealing of amorphous GaAs at temperatures smaller than or just sufficient to produce crystallization of the material. The films were grown by the flash evaporation technique on glass substrates at room temperature. Optical and structural changes of our samples were monitored through photothermal deflection spectroscopy, optical transmittance and reflectance and X-ray diffraction (XRD). The structural results from XRD detected no crystallization of the films for temperatures up to 240 degreesC. We have observed consistent changes in the optical gap and Urbach energy of the annealed film. The optical gap increases with increasing annealing temperature from 1.17 to 1.32 eV. The Urbach energy decrease from 120 meV (as-grown film) to 105 meV (anneal at 200 degreesC). We propose that these changes are due to a diminution of the tail state defects and/or the relaxation of strained bonds. (C) 2002 Elsevier B.V. B.V. All rights reserved.

HEAT-KERNEL EXPANSION AT FINITE TEMPERATURE

We show how the zero-temperature result for the heat-kernel asymptotic expansion can be generalized to the finite-temperature one. We observe that this general result depends on the interesting ratio square-root tau/beta, where tau is the regularization parameter and beta = 1/T, so that the zero-temperature limit beta --> infinity corresponds to the cutoff limit tau --> 0. As an example, we discuss some aspects of the axial model at finite temperature.

Influence of temperature on the microstructure and electrical properties of BBT thin films

The BBT films were prepared by a spin-coating process from the polymeric precursor method (Pechini process). In order to study the influence of the temperature on the BBT microstructure and electrical properties, the films were deposited on platinum coated silicon substrates and annealed from 700degreesC to 800degreesC for 2 hours in oxygen atmosphere. The crystallinity of the films was examined by X-ray diffraction while the surface morphology was analysed by atomic force microscope. The dielectric properties and dissipation factor of BaBi2Ta2O9 films at 1 MHz were observed. The polarization-electric field hysteresis loops revealed the ferroelectric characteristics of BaBi2Ta2O9 thin films.