Production and Characterization of Composite Material Useful as a Protective Barrier in Electronic Applications

This work describes the production and characterization of a selective membrane useful for electronic devices. The membrane was a composite made by a thin film of plasma-polymerized HFE (methyl nonafluoro(iso)butyl ether) immersed in plasma-polymerized HMDS (hexamethyldisilazane) film, a third phase being 5 µm starch particles included in this matrix. The film was deposited on silicon substrates and its physical, chemical and adsorption characteristics were determined. Infrared and x-ray photoelectron spectroscopy analyses showed fluorine and carboxyl groups on the bulk and the surface, respectively. SEM results indicate the film is conformal even if starch is present. Optical microscopy analysis showed good resistance toward acid and base solutions. Quartz crystal microbalance indicated adsorption of polar organic compounds on ppm range. This thin film is environment-friendly and can be used as a protective layer or in electronic devices due to adsorption of volatile organic compounds.

Sistemas bioinspirados aplicados no estudo de interação e sensoriamento de derivados xantênicos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Avaliação das características de superfície e formação de biofilmes em materiais odontológicos tratados em plasmas de HMDSO

Pós-graduação em Reabilitação Oral - FOAR

Supramolecular organization-electrical properties relation in nanometric organic films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Single precursor route to efficient cobalt sulphide counter electrodes for dye sensitized solar cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoelectrochemical properties of FTO/p-NiO electrode induced by UV light irradiation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Modificação de superfície da liga Ti6A14V para apliacação biomédica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização de Filmes a-C:H:Cl e a-C:H:Si:Cl produzidos por deposição à vapor químico assistido por plasma (PECVD) e deposição e implantação iônica por imersão em plasma (PIIID)

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Investigação das propriedades ópticas, morfológicas e elétricas da heterojunção SnO2: Ce3+/ GaAs

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Síntese e caracterização de alvo de óxido de zinco dopado com alumínio

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Grain size effect on the electrical response of SnO2 thin and thick film gas sensors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The improvement of thin polymer film properties through plasma immersion ion implantation and deposition technique

Thin polymer films were deposited from acetylene and argon mixtures by plasma immersion ion implantation and deposition. The effect of the pulse frequency, v, on molecular structure, optical gap, contact angle and hardness of the films was investigated. It was observed progressive dehydrogenation of the samples and increment in the concentration of unsaturated carbon bonds as the pulse frequency was increased. Film hardness and contact angle increased and optical gap decreased with v. These results are interpreted in terms of the chain unsaturation and crosslinking.