Experimental and theoretical studies of photoluminescence in Zns obtained by microwave-assisted solvothermal method

A shift of the photoluminescence (PL) emission was observed in ZnS prepared by microwave assisted solvothermal method with the increase of the time in microwave. In this work we reported a study of the optical behavior linking with the structural disorder according to XRD and FEG-TEM results. The reduction of intrinsic defects in the lattice is responsible for the decrease of electronic levels in the band gap changing the PL profile. This effect was confirmed by electronic structure calculations.

TiO2/CuO films obtained by citrate precursor method for photocatalytic application

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparação pelo método poliol modificado, caracterização estrutural e espectroscópia de nanopós de niobato de potássio e neodímio e de suas condições sólidas dopadas em európio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Rietveld refinement, cluster modelling, growth mechanism and photoluminescence properties of CaWO4: Eu3+ microcrystals

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Rietveld refinement and optical properties of SrWO4:Eu3+ powders prepared by the non-hydrolytic sol-gel method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A joint experimental and theoretical study on the electronic structure and photoluminescence properties of Al-2(WO4)(3) powders

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural and optical properties of ZnS/MgNb2O6 heterostructures

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A relationship between structural and electronic order-disorder effects and optical properties in crystalline TiO2 nanomaterials

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and optical property of MgMoO4 crystals

In this work, we report on the synthesis of MgMoO4 crystals by oxide mixed method. The powder was calcined at 1100 degrees C for 4h and analyzed by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Field emission gun scanning electron microscopy (FEG-SEM), Ultraviolet-visible (UV-vis) absorption spectroscopy and Photoluminescence (PL) measurement. XRD analyses revealed that the MgMoO4 powders crystallize in a monoclinic structure and are free secondary phases. UV-vis technique was employed to determine the optical band gap of this material. MgMoO4 crystals exhibit an intense PL emission at room temperature with maximum peak at 579 nm (yellow region) when excited by 350 nm wavelength at room temperature.

Surface modified Mg-doped ZnO QDs for biological imaging

Fundação Amparo à Pesquisa Estado de São Paulo (FAPESP)

Caracterização de Filmes a-C:H:Cl e a-C:H:Si:Cl produzidos por deposição à vapor químico assistido por plasma (PECVD) e deposição e implantação iônica por imersão em plasma (PIIID)

Pós-graduação em Ciência e Tecnologia de Materiais - FC

First-principles simulation of elastic constants and electronic properties of GaN

The electronic and structural properties and elastic constants of the wurtzite phase of GaN, was investigated by computer simulation at Density Functional Theory level, with B3LYP and B3PW hybrid functional. The electronic properties were investigated through the analysis of the band structures and density of states, and the mechanical properties were studied through the calculus of the elastic constants: C11, C33, C44, C12, and C13. The results show that the maximum of the valence band and the minimum of the conduction band are both located at the Γ point, indicating that GaN is a direct band gap semiconductor. The following constants were obtained for B3LYP and B3PW (in brackets): C11 = 366.9 [372.4], C33 = 390.9 [393.4], C44 = 99.1 [96.9], C12 = 143.6 [155.2], and C13 = 107.6 [121.4].

Investigação das propriedades ópticas de ZnO e ZnO:Al

Pós-graduação em Ciência e Tecnologia de Materiais - FC