174 resultados para PHOTOLUMINESCENCE PROPERTY


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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Tin dioxide (SnO2) thin films doped with Eu3+, are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly presents luminescence from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where emissions from the Eu3+ transitions are absent. The Eu3+ transitions are clearly identified and are similar to the observation on SnO2 pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of heterojunction films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions, which is blue-shifted as the thermal annealing temperature increases. The size of nanocrystallites points toward quantum confinement or electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Materials with high photoluminescence (PL) intensity can potentially be used in optical and electronic devices. Although the PL properties of bismuth(III) oxide with a monoclinic crystal structure (α-Bi2O3) have been explored in the past few years, methods of increasing PL emission intensity and information relating PL emission to structural defects are scarce. This research evaluated the effect of a pressure-assisted heat treatment (PAHT) on the PL properties of α-Bi2O3 with a needlelike morphology, which was synthesized via a microwave-assisted hydrothermal (MAH) method. PAHT caused an angular increase between the [BiO6]-[BiO6] clusters of α-Bi2O3, resulting in a significant increase in the PL emission intensity. The Raman and XPS spectra also showed that the α-Bi2O3 PL emissions in the low-energy region (below ∼2.1 eV) are attributed to oxygen vacancies that form defect donor states. The experimental results are in good agreement with first-principles total-energy calculations that were carried out within periodic density functional theory (DFT).

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Ceramic powders based on Zn3Ga2Ge2O10: Cr3+ X% (X = 0.0; 0.5; 0.75; 1.0) were synthesized by solid-state reaction method. The gallium-zinc germanate doped with chromium presents an interesting property of phosphorescence, that means, it is capable of emitting light when excited by a source of radiation, and such emission remains for some time after stopping the source. For this reason, these materials can be widely applied in night-vision surveillance, (through the use of solar energy, for example), electronic devices screen, emergency routes signals, control panels indicators in dark environments, etc. In this job were considered different amounts of dopant in order to perform a comparison of structural and photoluminescent properties. For that, some analyses were performed on samples, such as XRD, FT-Raman, SEM, UV-vis and photoluminescence measurements (PL). Such analysis allowed to infer that the presence of chromium results in no phase transformation, so that the four compositions have the same set of phases: cubic, rhombohedral and hexagonal. Although the structure was not changed, chromium influences other properties / characteristics of these materials. Examples are: increase of band-gap, decrease of average particle size, small changes in binding energy checked by Raman and especially the increase of photoluminescent property. The chromium ions have great ease in replacing gallium ions in octahedral sites, resulting in emission of light with a wavelength of about 700 nm (infrared region), which is justified by the spin-forbidden 2E 4A2 transition. In other words, chromium is a favorable luminescent center, acting as a trap in the crystal structure, since it imprisons the excitation energy easily and releases it gradually, allowing the phosphorescence. It was observed that the composition ... (Complete abastract click electronic access below)