Oriented growth of Bi3.25La0.75Ti3O12 thin films on RuO2/SiO2/Si substrates by using the polymeric precursor method: Structural, microstructural and electrical properties

c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on a RuO2 top electrode deposited on a (100) SiO2/Si substrate by the polymeric precursor method. X-ray diffraction and atomic force microscope investigations indicate that the films exhibit a dense, well crystallized microstructure having random orientations with a rather smooth surface morphology. The electrical properties of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on RuO2 bottom electrode leaded to a large remnant polarization (P-r ) of 17.2 mu C/cm(2) and (V-c ) of 1.8 V, fatigue free characteristics up to 10(10) switching cycles and a current density of 2.2 mu A/cm(2) at 5 V. We found that the polarization loss is insignificant with nine write/read voltages at a waiting time of 10,000 s. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s.

Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition

Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

MODEL FOR ASYMPTOTIC D-STATE PARAMETERS OF LIGHT-NUCLEI - APPLICATION TO HE-4

A simple method for calculating the asymptotic D-state observables for light nuclei is suggested. The method exploits the dominant clusters of the light nuclei. The method is applied to calculate the He-4 asymptotic D to S normalization ratio rho(alpha) and the closely related D-state parameter D2alpha. The study predicts a correlation between D2alpha and B(alpha), and between rho(alpha) and B(alpha), where B(alpha) is the binding energy of He-4. The present study yields rho(alpha) congruent-to -0.14 and D2alpha congruent-to -0.12 fm2 consistent with the correct experimental eta(d) and the binding energies of the deuteron, triton, and the alpha particle, where eta(d) is the deuteron D-state to S-state normalization ratio.

(X)over-bar charts with variable parameters

Varying the parameters of the (X) over bar chart has been explored extensively in recent years. In this paper, we extend the study of the (X) over bar chart with variable parameters to include variable action limits. The action limits establish whether the control should be relaxed or not. When the (X) over bar falls near the target, the control is relaxed so that there will be more time before the next sample and/or the next sample will be smaller than usual. When the (X) over bar falls far from the target but not in the action region, the control is tightened so that there is less time before the next sample and/or the next sample will be larger than usual. The goal is to draw the action limits wider than usual when the control is relaxed and narrower than usual when the control is tightened. This new feature then makes the (X) over bar chart more powerful than the CUSUM scheme in detecting shifts in the process mean.

Microstructural and ferroelectric properties of PbZr1-xTi(x)O(3) thin films prepared by the polymeric precursor method

The polymeric precursor method was employed in the preparation of PZT thin films on Pt(111)Ti/SiO2/Si(100) substrates. X-ray diffraction patterns revealed the polycrystalline nature of the PZT (53:47) thin films, which had a granular structure and a grain size of approximately 70 nm. A 350-nm thick film was obtained by running three cycles of the dip-coating/heating process. Atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (= 2.0 nm). The PZT (53:47) thin films annealed at 700 degreesC showed a well-saturated hysteresis loop. The C-V curves of perovskite thin film displayed normal ferroelectric behavior, while the remanent polarization (2P(r)) and coercive field (E-e) of the film deposited and measured at room temperature were 40 muC/cm(2) and 110 kV/cm, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Structural and surface properties of thermally prepared Ti/RhxTi(1-x)Oy electrodes: I - influence of preparation parameters

Electrodes of RhxTi(1-x) O-y nominal composition were prepared by thermal decomposition of the chloride or nitrate precursor salts dissolved in strongly acidic medium and applied by brush to both sides of a Tidegrees support. A systematic study of the influence of calcination temperature and time as well as oxygen flux was conducted. The coatings were characterised by SEM, EDAX, XRD, open circuit potential measurements and cyclic voltammetry (CV). Visible-ultraviolet spectrophotometry was employed to identify the chemical form of the precursor in solution while thermogravimetric analysis (TGA) was used to assess the decomposition temperature ranges. Optimisation of the coating preparation parameters showed coatings obtained from [Rh(H2O)(6)](NO3)(3) precursor dissolved in HNO3 1:2 (v/v) and fired at 430 degreesC for 2 h in a 5 1 min (-1) oxygen stream-furnished stable electrodes having the highest electrochemically active surface area. (C) 2002 Elsevier B.V. Ltd. All rights reserved.

Genetic parameters estimate for milk and mozzarella cheese yield, fat and protein percentage in dairy buffaloes in Brazil

The aim of this study was analyze the (co)variance components and genetic and phenotypic relationships in the following traits: accumulated milk yield at 270 days (MY270,), observed until 305 days of lactation; accumulated milk yield at 270 days (MY270/A) and at 305 days (MY305), observed until 335 days of lactation; mozzarella cheese yield (MCY) and fat (FP) and protein (PP) percentage, observed until 335 days of lactation. The (co)variance components were estimated by Restricted Maximum Likelihood methodology in analyses single, two and three-traits using animal models. Heritability estimated for MY270, MY270/A, MY305, MCY, FP and PP were 0.22; 0.24, 0.25, 0.14, 0.29 and 0.40 respectively. The genetic correlations between MCY and the variables MY270, MY270/A, MY305, PP and FP was: 0.85; 1.00; 0.89; 0.14 and 0.06, respectively. This way, the selection for the production of milk in long period should increase MCY. However, in the search of animals that produce milk with quality, the genetic parameters suggest that another index should be composed allying these studied traits.

Structural and microstructural behaviour of SnO2 dense ceramics doped with ZnO and WO3

SnO2-based varistors doped with ZnO and WO3 were prepared by mixed oxide method. Experimental evidence shows that the increase in ZnO amount increases the volume and microstrain of unit cell while the WO3 promotes a decrease. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation in the grain boundary without influence in the densification of the samples. Besides that, an increase in the electrical resistance of the SnO2-ZnO-WO3 system was observed independent of the WO3 concentration. (c) 2005 Elsevier B.V. All rights reserved.