Comparative analysis for reactive energy measurement methodologies, under non-sinusoidal conditions in three-phase four-wire circuits

This paper presents some methodologies for reactive energy measurement, considering three modern power theories that are suitable for three-phase four-wire non-sinusoidal and unbalanced circuits. The theories were applied in some profiles collected in electrical distribution systems which have real characteristics for voltages and currents measured by commercial reactive energy meters. The experimental results are presented in order to analyze the accuracy of the methodologies, considering the standard IEEE 1459-2010 as a reference. Finally, for additional comparisons, the theories will be confronted with the modern Yokogawa WT3000 energy meter and three samples of a commercial energy meter through an experimental setup. © 2011 IEEE.

Arc-flash energy: The impact of fuse link manufacturers

The traditional operational and hazard control paradigm of an electrical installation has several issues pertaining to the diversity of equipment. A large maintenance inventory is a reason for concern for any manager, but the arc-flash hazard is a particularly new phenomenon, and the effects of equipment diversity on this phenomenon are even newer. The class of arc hazard can be simply increased by changing the fuse link or circuit breaker manufacturer. Management pressure to operate as well as nonstandard practices and installations are also partly responsible. The aim of this article is to take a typical situation in an industrial plant and to statistically simulate, by means of a dedicated software program, the fuse arc-flash interruption performance of various manufacturers. The purpose of this article is to obtain a more objective indication of the influence of different fuse link manufacturers on arc-flash incident energy. © 1975-2012 IEEE.

Decay of photo-induced conductivity in Sb-doped SnO2 thin films, using monochromatic light of about bandgap energy

Doping tin dioxide (SnO2) with pentavalent Sb5+ ions leads to an enhancement in the electrical conductivity of this material, because Sb5+ substitutes Sn4+ in the matrix, promoting an electronic density increase in the conduction band, due to the donor-like nature of the doping atom. Results of computational simulation, based on the Density Functional Theory (DFT), of SnO2:4%Sb and SnO2:8%Sb show that the bandgap magnitude is strongly affected by the doping concentration, because the energy value found for 4 at%Sb and 8 at%Sb was 3.27 eV and 3.13 eV, respectively, whereas the well known value for undoped SnO2 is about 3.6 eV. Sb-doped SnO2 thin films were obtained by the sol-gel-dip-coating technique. The samples were submitted to excitation with below theoretical bandgap light (450 nm), as well as above bandgap light (266 nm) at low temperature, and a temperature-dependent increase in the conductivity is observed. Besides, an unusual temperature and time dependent decay when the illumination is removed is also observed, where the decay time is slower for higher temperatures. This decay is modeled by considering thermally activated cross section of trapping centers, and the hypothesis of grain boundary scattering as the dominant mechanism for electronic mobility. © 2012 Elsevier B.V. All rights reserved.

Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Structural refinement, optical and electrical properties of [Ba1-x Sm-2x/3](Zr0.05Ti0.95)O-3 ceramics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Analysis of the electrical characteristics and surge protection of EHV transmission lines supported by tall towers

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Measurement of Radiant Energy using Pyroelectric Polymer/Ceramic Composite

Monitoring non-ionizing radiant energy is increasingly demanded for many applications such as automobile, biomedical and security system. Thermal type infrared (IR) sensors can operate at room temperature and pyroelectric materials have high sensitivity and accuracy for that application. Working as thermal transducer pyroelectric sensor converts the non-quantified thermal flux into the output measurable quantity of electrical charge, voltage or current. In the present study the composite made of poly(vinylidene fluoride) -PVDF and lead zirconate titanate (PZT) partially recovered with polyaniline (PAni) conductor polymer has been used as sensor element. The pyroelectric coefficient p(T) was obtained by measuring the pyroelectric reversible current, i.e., measuring the thermally stimulated depolarization current (TSDC) after removing all irreversible contribution to the current such as injected charge during polarization of the sample. To analyze the sensing property of the pyroelectric material, the sensor is irradiated by a high power light source (halogen lamp of 250 W) that is chopped providing a modulated radiation. A device assembled in the laboratory is used to change the light intensity sensor, an aluminum strip having openings with diameters ranging from 1 to 10 mm incremented by one millimeter. The sensor element is assembled between two electrodes while its frontal surface is painted black ink to maximize the light absorption. The signal from the sensor is measured by a Lock-In amplifier model SR530 -Stanford Research Systems. The behavior of the output voltage for an input power at several frequencies for PZT-PAni/PVDF (30/ 70 vol%) composite follows the inverse power law (1/ f) and the linearity can be observed in the frequency range used.

Mylar Secondary Emission-energy Distribution and Yields

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Modeling of piezoelectric energy harvesting considering the dependence of the rectifier circuit

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electrical conductivity of Ag-Na ion exchanged soda-lime glass

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical properties of highly conducting Sno2:Sb nanocrystals synthesized using a nonaqueous sol gel method

This work describes the synthesis of highly conducting antimony-doped tin oxide (ATO) nanocrystals prepared via a nonaqueous sol–gel route in the size range of 4–6 nm and provides insights into its electrical properties. The antimony composition was varied from 1 to 18 mol% and the lowest resistivity (4.0 × 10−4Ω·cm) was observed at room temperature in the SnO2:8.8 mol% Sb composition. The samples were evaluated by X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and scanning electron microscope, and resistivity measurements were taken in the four-probe mode in the temperature range of 13–300 K. The results show highly crystalline nanoparticles in a monodisperse colloidal system, dependence on the shape of ATO nanoparticles as a function of Sb distribution, low resistivity, and semiconductor–metal transition.

Desenvolvimento de um sistema de gerenciamento de energia (EMS - Energy Management System) para a rede elétrica inteligente (Smart Grid)

Pós-graduação em Engenharia Elétrica - FEIS

Electrical and electrochemical measurements in nanostructured films of polythiophene derivatives

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)