155 resultados para Dielectric waveguides
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The photosensitivity of GeSx binary glasses in response to irradiation to femtosecond pulses at 800 nm is investigated. Samples with three different molecular compositions were irradiated under different exposure conditions. The material response to laser exposure was characterized by both refractometry and micro-Raman spectroscopy. It is shown that the relative content of sulfur in the glass matrix influences the photo-induced refractive index modification. At low sulfur content, both positive and negative index changes can be obtained while at high sulfur content, only a positive index change can be reached. These changes were correlated with variations in the Raman response of exposed glass which were interpreted in terms of structural modifications of the glass network. Under optimized exposure conditions, waveguides with positive index changes of up to 7.8x10−3 and a controllable diameter from 14 to 25 μm can be obtained. Direct inscription of low insertion losses (IL = 3.1 – 3.9 dB) waveguides is demonstrated in a sample characterized by a S/Ge ratio of 4. The current results open a pathway towards the use of Ge-S binary glasses for the fabrication of integrated mid-infrared photonic components.
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The electrical response of Ba(Ti0.90Zr0.10)O3 (BZT) ceramics obtained by the mixed oxide method as a functionof tungsten content was investigated. According to X-ray diffraction analysis the single phase BZT1W (1wt.% W doped BZT) and BZT2W (2 wt.% W doped BZT) ceramics, crystallized in a perovskite structure, wereobtained. It is also shown that tungsten substituted ceramics can be sintered at a reduced temperature whencompared to the undoped BZT. Electron paramagnetic resonance (EPR) analyses reveals that substitution ofTi4+ by W6+ causes distortion in the crystal structure changing lattice parameter. Substitution of W6+ on B-siteof ABO3 perovskite BZT ceramics shifted the phase transition to lower temperatures up to a tungsten contentof 2 wt.% leading to a relaxor-like behaviour.Keywords: donor dopant; ceramics; dielectric response; mixed oxide method
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75 Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films. © 2006 Trans Tech Publications, Switzerland.
Resumo:
Ferroelectric strontium barium niobate solid solutions had received great attention due to their excellent pyroelectric, electrooptic and photorefractive properties. Furthermore, they usually also present very interesting phase transition characteristics. In this work, polycrystalline single phase Sr 0.75 Ba 0.25 Nb 2 O 6 thin films were prepared by a hybrid chemical method and deposited on Pt/Ti/SiO 2 /Si substrates. The temperature dependence of dielectric constant was measured at different frequencies and bias field levels. The presence of two dielectric dispersion regions with relaxor characteristics was observed at distinct temperature ranges, corresponding to the ferro-paraelectric and to a structural phase transition at low temperatures, respectively. A specific dielectric dispersion region, associated with an incommensurate superstructure frequently observed in bulk samples, was not observed in this films probably due to their small grain sizes. © 2002 Taylor & Francis.