308 resultados para DOPING
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The surface properties of boron-doped nanocrystalline diamond films treated with H(2) plasma was investigated in regard to their electrochemical response for phenol oxidation. The surface of these films is relatively flat formed by crystallites with sizes of about 40 nm. X-ray photoelectron spectroscopy analyses showed that electrode surface has a high amount of C-H bonds. This behavior is in agreement with Mott-Schottky plot measurements concerning the flat band potential that presented a value as expected for hydrogenated diamond surface. This electrode presented the phenol detection limit of 0.08 mg L(-1) for low phenol concentrations from 40 to 250 mu mol L(-1).
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.
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The aim of this work is to investigate the structural properties of the (Pb1-xErx)TiO3 (PET) powders, with x varying from 0.01 to 0.08, prepared by the polymeric precursor method. Combined X-ray diffraction, Raman spectroscopy and ab initio calculation reveal a diffuse phase-transition of a tetragonal to a cubic phase. The crystalline models built allowed to calculate electronic properties and to analyze the behavior of the doping element in the structure of the material, which are consistent with the experimental results that indicate the beginning of phase-transition from tetragonal to cubic. (C) 2007 Elsevier B.V. All rights reserved.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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We present photoluminescence and decay of photo excited conductivity data for sol-gel SnO(2) thin films doped with rare earth ions Eu(3+) and Er(3+), a material with nanoscopic crystallites. Photoluminescence spectra are obtained under excitation with several monochromatic light sources, such as Kr(+) and Ar(+) lasers, Xe lamp plus a selective monochromator with UV grating, and the fourth harmonic of a Nd: YAG laser (4.65eV), which assures band-to-band transition and energy transfer to the ion located at matrix sites, substitutional to Sn(4+). The luminescence structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at grain boundary layer, where it is placed in asymmetric sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference between capture energy and grain boundary barrier is not so evident, even though the luminescence spectra are rather distinct.
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In the last 30 years several studies have been made to understand the relaxation mechanisms of the hydrogen atoms present in transition metals and their alloys. In this work, we observed the stress-induced ordering of hydrogen atoms around the interstitial oxygen atoms near the niobium matrix atoms. We studied this relaxation process by measuring the attenuation of longitudinal ultrasonic waves. These measurements were made in Nb1.0%Zr polycrystalline alloys at 10 and 30 MHz, pure and doped with 0.7 and 4.2 at.% hydrogen. The results revealed a thermally activated relaxation structure around 202 K and 235 K for 10 MHz and 30 MHz respectively. This relaxation structure increases with increasing hydrogen concentration. © 1994.
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PbMg1/3Nb2/3O3 (PMN) prepared by organic solution of citrates was analyzed by the Rietveld method to determine the influence of seeds and dopants on the perovskite and pyrochlore phase formation. It was observed that pyrochlore phase formation increases with an increase in calcination time when no additives are included during the preparation. It was also observed that a greater amount of perovskite phase appeared in doped or seeded samples. The fraction of perovskite phase increased from 88 mol % in pure sample to ∼95 mol % in doped and seeded samples calcined at 800°C for 1 h. It is clear that the addition of dopants or seeds during PMN preparation can enhance the formation of perovskite phase.
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It's believed that the simple Su-Schrieffer-Heeger Hamiltonian can not predict the insulator to metal transition of transpolyacetylene (t-PA). The soliton lattice configuration at a doping level y=6% still has a semiconductor gap. Disordered distributions of solitons close the gap, but the electronic states around the Fermi energy are localized. However, within the same framework, it is possible to show that a cluster of solitons can produce dramatic changes in the electronic structure, allowing an insulator-to-metal transition.
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We report the observation of frequency upconversion in fluoroindate glasses with the following compositions: (mol%) (39 - x)InF3-20ZnF2-20SrF2-16BaF 2-2GdF3-2NaF-1GaF3-xNdF3 (x = 0.05, 0.1, 0.5, 1, 2, 3). The excitation source was a dye laser in resonance with the 4I9/2→(2G5/2, 2G7/2) transition of the Nd3+ ions. The upconverted fluorescence spectra show emissions from ∼ 350 to ∼ 450 nm, corresponding to transitions 4D3/2→4I9/2 ;4D3/2→4I11/2; 2P3/2→ 4I9/2; 4D3/2→4I13/2; 2P3/2→4I11/2; 4D3/2→4I15/2; and 2P3/2 → 4I13/2. The dependence of the fluorescence signals on the laser intensity indicates that two laser photons participate in the process. The temporal behavior of the signal indicates that energy transfer among the Nd3+ ions is the main mechanism which contributes to upconversion at 354 and 382 nm.
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In rare earth ion doped solids, a resonant non-linear refractive index, n2, appears when the laser pumps one of the ion excited states and the refractive index change is proportional to the excited state population. In these solids there are usually thermal and non-thermal lensing effects, where the non-thermal one is due to the polarizability difference, Δα, between excited and ground states of the ions. We have used the time resolved Z-scan and a mode-mismatched thermal lens technique with an Ar+ ion laser in Er+3 (20ZnF2-20SrF2-2NaF-16BaF2-6GaF3-(36 - x)InF3-xErF3, with x= 1, 2, 3 and 4 mol%) and Nd+3 (20SrF2-16BaF2-20ZnF2-2GdF3-2NaF-(40 - x)InF3-xNdF3, with x = 0.1, 0.25, 0.5-1 mol%) doped fluoroindate glasses. In both samples we found that the non-linear refraction is due to the thermal effect, while the non-thermal effect is negligible. This result indicates that in fluoride glasses Δα is very small (less than 10-26 cm3). We also measured the imaginary part of the non-linear refractive index (n″2) due to absorption saturation.
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We report the observation of intense frequency up-conversion in Nd3+-doped fluoroindate glasses pumped by the second harmonic of a cw mode-locked Nd: YAG laser. Mechanisms for generating the observed emissions are discussed.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)