145 resultados para Valence Isomers


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Persistent Organic Pollutants (POPs) are chemical substances extraordinarily toxic and persistent in the environment. Due to these properties, POPs are targets of the Stockholm Convention which aims to provide means to eliminate production and use by encouraging the reduction and, where possible, eliminating the release of these contaminants to the environment. One of the articles of this _Convention aims to assess the basal levels of such substances in the environment to monitor both the reduction of release to the environment, and to assess human exposure, using analyzes of milk and air for example. Although efforts to control POPs production and release to the environment have been made, data about their levels in Brazil are still scarce, mainly in the atmosphere or indoor environment. Considering the permanence of people inside its house, this study presents a method for POP extraction from XAD-2 sorbent employed in indoor air sampling, with identification and quantification by GC-ECD. GC-ECD linear range of the studied analytes, congeners of polychlorinated biphenyls (PCB) (28, 52, 101, 118, 138, 153 and 180), DDTs and their metabolites (DDDs, DDEs) and endosullan (isomers c - and 13 - and metabolite endosulfan sulfate) ranged between 0.5 and 16.0 ng mL-I with r2 > 0.967. The method developing consist of selecting the extraction solvent system by agitation (90 rpm, 1 hour) with n-hexan,e (2 mL) or n-hexane:acetone (1:1, v/v) (2 mL), concentration the extract with a gentle N2 stream, and evaluation of breakthrough with passage or air through the fortified XAD-2 cartridge before extraction, employing a low volume air suction pump (Pump Model 224 universal-PCXR8; 5-5000 mL min-1, SKC Inc., Eighty Four, PA, USA), Calibrator Dry-Cal DC-Lite (BIOS, Butler, NJ, USA)). Two fortification levels were employed, 15 and 30 ng. After selecting n-hexane as extraction solvent, with accuracy and precision ranging...

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Pós-graduação em Psicologia do Desenvolvimento e Aprendizagem - FC

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Crystallographic and microstructural properties of Ho(Ni,Co,Mn)O3± perovskite-type multiferroic material are reported. Samples were synthesized with a modified polymeric precursor method. The synchrotron X-ray powder diffraction (SXRPD) technique associated to Rietveld refinement method was used to perform structural characterization. The crystallographic structures, as well as microstructural properties, were studied to determine unit cell parameters and volume, angles and atomic positions, crystallite size and strain. X-ray energies below the absorption edges of the transition metals helped to determine the mean preferred atomic occupancy for the substituent atoms. Furthermore, analyzing the degree of distortion of the polyhedra centered at the transitions metal atoms led to understanding the structural model of the synthesized phase. X-ray photoelectron spectroscopy (XPS) was performed to evaluate the valence states of the elements, and the tolerance factor and oxygen content. The obtained results indicated a small decrease distortion in structure, close to the HoMnO3 basis compound. In addition, the substituent atoms showed the same distribution and, on average, preferentially occupied the center of the unit cell.

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The electronic and structural properties and elastic constants of the wurtzite phase of GaN, was investigated by computer simulation at Density Functional Theory level, with B3LYP and B3PW hybrid functional. The electronic properties were investigated through the analysis of the band structures and density of states, and the mechanical properties were studied through the calculus of the elastic constants: C11, C33, C44, C12, and C13. The results show that the maximum of the valence band and the minimum of the conduction band are both located at the Γ point, indicating that GaN is a direct band gap semiconductor. The following constants were obtained for B3LYP and B3PW (in brackets): C11 = 366.9 [372.4], C33 = 390.9 [393.4], C44 = 99.1 [96.9], C12 = 143.6 [155.2], and C13 = 107.6 [121.4].

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)