Crystallization process of amorphous GaSb films studied by Raman spectroscopy

Thermal annealings of amorphous gallium antimonide films were accompanied using Raman spectroscopy, both for stoichiometric and nonstoichiometric compositions. The films were prepared by flash evaporation on silicon substrates. Structural changes were induced by the heat treatments: an increasing degree of crystallization as a function of the annealing temperature is observed. Sb clusters are found to crystallize before GaSb does, and the dependence of the corresponding Raman peak intensity with the annealing temperature (occurring in two regimes) is explained. A mechanism for the crystallization of the amorphous GaSb is proposed, based on the prior migration of the Sb excess outside the GaSb region to be crystallized. © 1995 American Institute of Physics.

Avaliação in vitro de superfícies de titânio irradiadas com laser de Er,Cr:YSGG

Introduction: As a new alternative in the complementary treatment lasers teem different systems were employed in the decontamination of dental surfaces implants however, some systems have caused significant changes in its surface. Purpose: Analyze by Scanning Electron Microscopy (SEM) the effects of laser irradiation of Er,Cr: YSGG on different surfaces of titanium. Material and method: Study of 20 titanium discs, and 10 Machined Surface (MS) and 10 surfaces treated with acid (AC). The 10 discs with the same treatment were divided into two groups with five units each, the irradiation was performed in powers of 1 W and 2 W. Result: Showed that the irradiation with 1 W of power resulted in no significant morphological changes in the MS-irradiated compared to non-irradiated surfaces. In MS surfaces, minor changes were observed in the increase of 1000× when compared to non-irradiated surface. With 2 W of power, there were no significant morphological changes in the MS, compared to non-irradiated areas. In AC some changes were observed in the increase of X 1000, showing areas of wear suggestive of treatment and some areas with melting point. Conclusion: Considering the results and the parameters used in this study it was concluded that the Er, Cr: YSGG irradiation can be used for the machined surfaces of implants, but in acid-treated surfaces irradiation parameters should be more controlled.

Investigação das propriedades ópticas, morfológicas e elétricas da heterojunção SnO2: Ce3+/ GaAs

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo das propriedades ópticas de pós cerâmicos à base de Zn3Ga2Ge2O10: X% Cr3+ (X = 0 ; 0,5 ; 0,75 ; 1,0)

Ceramic powders based on Zn3Ga2Ge2O10: Cr3+ X% (X = 0.0; 0.5; 0.75; 1.0) were synthesized by solid-state reaction method. The gallium-zinc germanate doped with chromium presents an interesting property of phosphorescence, that means, it is capable of emitting light when excited by a source of radiation, and such emission remains for some time after stopping the source. For this reason, these materials can be widely applied in night-vision surveillance, (through the use of solar energy, for example), electronic devices screen, emergency routes signals, control panels indicators in dark environments, etc. In this job were considered different amounts of dopant in order to perform a comparison of structural and photoluminescent properties. For that, some analyses were performed on samples, such as XRD, FT-Raman, SEM, UV-vis and photoluminescence measurements (PL). Such analysis allowed to infer that the presence of chromium results in no phase transformation, so that the four compositions have the same set of phases: cubic, rhombohedral and hexagonal. Although the structure was not changed, chromium influences other properties / characteristics of these materials. Examples are: increase of band-gap, decrease of average particle size, small changes in binding energy checked by Raman and especially the increase of photoluminescent property. The chromium ions have great ease in replacing gallium ions in octahedral sites, resulting in emission of light with a wavelength of about 700 nm (infrared region), which is justified by the spin-forbidden 2E 4A2 transition. In other words, chromium is a favorable luminescent center, acting as a trap in the crystal structure, since it imprisons the excitation energy easily and releases it gradually, allowing the phosphorescence. It was observed that the composition ... (Complete abastract click electronic access below)