40 resultados para well-structured transition systems
Resumo:
Pós-graduação em Desenvolvimento Humano e Tecnologias - IBRC
Resumo:
We have carried out dielectric and Raman spectroscopy studies at the 298-623 K temperature range in polycrystalline Pb0.70Sr0.30TiO3 thin films grown by a soft chemical method. The diffuse phase-transition behavior of the thin films was observed by means of the dielectric constant versus temperature curves, which show a broad peak. Such behavior was confirmed later by Raman spectroscopy measurements up to 823 K, indicating that a diffuselike phase transition takes place at around 548-573 K. The damping factor of the E(1TO) soft mode was calculated using the damped simple harmonic oscillator model. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the microscopic local cubic symmetry by chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands at some temperature interval above the ferroelectric-paraelectric phase-transition temperature suggested a diffuse nature of the phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in this thin film. (C) 2004 American Institute of Physics.
Resumo:
We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV. (C) 2003 American Institute of Physics.
Resumo:
Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-xCaxTiO3 thin films (x=0.10, 0.20, 0.30, and 0.40) as a function of temperature. The results showed no shift in the dielectric constant (K) maxima, a broadening with frequency, and a linear dependence of the transition temperature on increasing Ca2+ content. on the other hand, a diffuse-type phase transition was observed upon transforming from the cubic paraelectric to the tetragonal ferroelectric phase in all thin films. The temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the local cubic symmetry due to chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands in some temperature interval above the FE-PE phase transition temperature suggested a diffuse-type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films.
Resumo:
Dielectric and Raman scattering experiments were performed on polycrystalline Pb(1-x)Ba(x)TiO(3) thin films (x=0.40 and 0.60) as a function of temperature. The dielectric study on single phase compositions revealed that a diffuse-type phase transition occurred upon transformation of the cubic paraelectric to the tetragonal ferroelectric phase in all thin films, which showed a broadening of the dielectric peak. Diffusivity was found to increase with increasing barium contents in the composition range under study. In addition, the temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted as a breakdown of the local cubic symmetry by chemical disorder. The lack of a well-defined transition temperature and the presence of broadbands in some temperature intervals above the paraferroelectric phase transition temperature suggest a diffuse-type phase transition. (C) 2008 American Institute of Physics.
Resumo:
Fluoroindate glasses containing 1, 2, 3, and 4 mol% ErF3 were prepared in a dry box under an argon atmosphere. Absorption spectra of these glasses at room temperature were obtained. The Judd-Ofelt parameters Ωλ (λ = 2, 4, 6) for f-f transitions of Er3+ ions as well as transition probabilities, branching ratios, radiative lifetimes, and peak cross-sections for stimulated emission of each band were determined. The concentration effect on the intensities is analyzed. The optical properties of the fluoroindate glasses doped with Er3+ ions are compared with those of other glasses described in the literature. © 1995.
Resumo:
The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N- propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with on-spot MALDI-TOF MS detection. © 2005 Elsevier Inc. All rights reserved.
Resumo:
The aim of this paper is to present the current development status of a low cost system for surface reconstruction with structured light. The acquisition system is composed of a single off-the-shelf digital camera and a pattern projector. A pattern codification strategy was developed to allow the pattern recognition automatically and a calibration methodology ensures the determination of the direction vector of each pattern. The experiments indicated that an accuracy of 0.5mm in depth could be achieved for typical applications.
Resumo:
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Resumo:
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Resumo:
Os sistemas de produção transgênicos, assim como os convencionais, exigem, além do controle químico, a adoção de outras estratégias de manejo de plantas daninhas. Objetivou-se, com este trabalho, avaliar o controle químico de plantas daninhas, em soja geneticamente modificada (transgênica) tolerante ao herbicida glyphosate associado a coberturas vegetais, na entressafra. O experimento foi instalado em área experimental da FCAV/Unesp, Jaboticabal (SP). O delineamento experimental foi o de blocos ao acaso, em esquema de parcelas subdivididas, com quatro repetições. Nas parcelas, foram avaliadas as coberturas vegetais de Brachiaria brizantha (braquiarão cv. Marandu), Pennisetum americanum (milheto forrageiro cv. BN2) e vegetação espontânea, e, nas subparcelas, os herbicidas glyphosate, chlorimuron - ethyl + lactofen em mistura e fluazifop-p-butyl em aplicação sequencial, além de duas testemunhas sem aplicação. A cobertura com braquiarão contribuiu para o controle químico, exercendo supressão das plantas daninhas. A aplicação única de 720 g e.a. ha-1de glyphosate, independentemente da cobertura vegetal utilizada na entressafra, foi suficiente para o controle adequado de Acanthospermum hispidum, Alternanthera tenella, Amaranthus sp., Bidens pilosa, Xanthium strumarium, Cenchrus echinatus, Digitaria sp. e Eleusine indica, com resultados similares ao tratamento (chlorimuron-ethyl + lactofen) + fluazifop-p-buthyl. Comparados à testemunha capinada, os herbicidas testados não afetaram a altura das plantas, massa seca da parte aérea, massa de 100 grãos e a produtividade de grãos. As plantas de soja crescidas sobre os resíduos vegetais de braquiarão e milheto forrageiro apresentaram maior altura, porém, nenhuma outra característica avaliada na cultura foi influenciada pelas coberturas.
Resumo:
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Resumo:
Fluoroindate glasses of the following compositions: (40-x)InF3-20ZnF(2)-16BaF(2)-20SrF(2)-2GdF(3)-2NaF-xTmF(3) with x = 1,3 mol% were prepared in a dry box under an argon atmosphere. The absorption spectra at room temperature in the spectral range 350-2200 nm were obtained. The spectra obtained for each sample had similar absorption and only the amplitude of the different bands changed as the concentration of Tm3+. The experimental oscillator strengths were determined from the areas under the absorption bands. Using the standard and modified Judd-Ofelt theory, intensity parameters Ohm(lambda) (lambda = 2,4,6) and (lambda = 2,3,4,5,6), respectively for f-f transitions of Tm3+ ions as well as transition probabilities, branching ratios and radiative lifetimes for each band were determined. The results are compared with those of other glasses described in the literature. (C) 1999 Elsevier B.V. B.V. All rights reserved.
Resumo:
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Resumo:
The presence of spermatozoa in vesicles in the cytoplasm of the epithelial cells that constitute the spermathecal wall of Melipona bicolor queen (Meliponini) is discussed in relation to the organ structure. The epithelial wall is lined by an apparently continuous cuticle in the luminal surface that should be a non-transposable barrier to the luminal spermatozoa. However, some spermatozoa were seen crossing the cuticle through interruptions that was first interpreted as sectioning defects. Nevertheless, the sperm cells in well-structured cytoplasmic vesicles, bound by membranes and sometimes associated to multivesicular bodies, as well as cytoplasmic structures representative of intracellular digestion and the occurrence of the phenomenon in two of the three spermathecae studied, suggest a real spermiophagic hole in the spermathecal epithelial cells.