116 resultados para Semiconductor polymer


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Structural health monitoring (SHM) refers to the procedure of assessing the structure conditions continuously so it is an alternative to conventional nondestructive evaluation (NDE) techniques [1]. With the growing developments in sensor technology acoustic emission (AE) technology has been attracting attention in SHM applications. AE are characterized by waves produced by the sudden internal stress redistribution caused by the changes in the internal structure, such as fatigue, crack growth, corrosion, etc. Piezoelectric materials such as Lead Zirconate Titanate (PZT) ceramic have been widely used as sensor due to its high electromechanical coupling factor and piezoelectric d coefficients. Because of the poor mechanical characteristic and the lack in the formability of the ceramic, polymer matrix-based piezoelectric composites have been studied in the last decade in order to obtain better properties in comparison with a single phase material. In this study a composite film made of polyurethane (PU) and PZT ceramic particles partially recovered with polyaniline (PAni) was characterized and used as sensor for AE detection. Preliminary results indicate that the presence of a semiconductor polymer (PAni) recovering the ceramic particles, make the poling process easier and less time consuming. Also, it is possible to observe that there is a great potential to use such type of composite as sensor for structure health monitoring.

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During the twentieth century the inorganic electronics was largely developed being present in various industrial equipment or household use. However, at the end of that century were verified electronic properties in organic compounds, giving rise to the field of organic electronics. Since then, the physical properties of elementary devices such as diodes and organic transistors have been studied. In this work was studied the properties of diode devices fabricated with a semiconductor polymer, the poly-o-methoxyaniline (POMA). Devices containing electrodes of Au and Al were fabricated with semiconductor polymer of different doping levels. We found that the rectifying behavior for the heterojunctions metal/polimer are reached only for high doping level (with conductivity greater than 1,77. 10-9 S / cm), which gives the devices characteristic of a Schottky diode. The rectifying behavior was observed for electric fields of low magnitude, below the operating field (~ 600 V/cm), while for electric field greater than 600 V/cm the a linear behavior I vs.V was obtained. We determined that this Ohmic behavior arises from the charge transport over the volume of the semiconductor material after the lowering of the metal/semiconductor barrier. In devices with weakly doped semiconductor, the electrical resistance of the volume becomes high and the process of charge transportation is dominated by the volume, for any intensity of the applied electric field

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Usually organic polymeric diodes are made with a semiconductor layer placed between two electrodes in a sandwich-like architecture, where the electrodes are deposited on the surfaces of a polymeric semiconductor film. This methodology leads to two main problems: i) the polymeric film top surface is rough and irregular, resulting in non-uniform electric field into the device; ii) during the deposition of metallic electrode in the top surface polymeric film, by thermal evaporation, occurs the diffusion of metal atoms into the polymeric film, changing the material electronic structure. Thus, the metal-semiconductor junction is not well defined, which is essential for the production of good quality Schottky diode, which exhibits ideality factor close to the unity and low turn-on voltage. In order to avoid these two problems, in the present research was proposed to manufacture an organic diode with the semiconductor polymeric layer deposited over bimetallic (gold and aluminum) interdigitated electrodes. The doping of the active layer was performed by immersing the device in hydrochloric acid solution with pH 2 during different times in order to promote different doping levels of the semiconductor polymer. Was verified that the proposed diode, which exhibits well-defined metal-semiconductor junction, operates as a Schottky diode, with good ideality factor, 10 ± 3, and low turn-on voltage, 1,2 ± 0,2 V, in comparison with conventional organic polymeric diodes. Contrasting with the ideality factor and turn-on voltage, the diode rectification ratio was obtained as 7, a value lower than the expected for a good organic diode. Was also showed that the diode characteristics were dependent on the semiconductor polymer doping level, and that the diode characteristics were optimized with doping promoted by immersion in the acid solution for times longer than 50 s. Furthermore, as was showed that the diodes properties are dependent on the semiconductor...

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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The electrical characterization of a high efficient multilayer polymer light emitting diode using poly[(2-methoxy-5-hexyloxy)-p-phenylenevinylene] as the emissive layer and an anionic fluorinated surfactant as the electron transport layer was performed. For the sake of comparison, a conventional single layer device was fabricated. The density current vs. voltage measurements revealed that the conventional device has a higher threshold voltage and lower current compared to the surfactant modified device. The effective barrier height for electron injection was suppressed. The influence of the interfaces and bulk contributions to the dc and high frequencies conductivities of the devices was also discussed. (c) 2006 Springer Science + Business Media, Inc.

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Polymer light-emitting devices (PLEDs) with poly(2-methoxy-5-hexyloxy)-p-phenylenevinylene (OC1OC6-PPV) as the emissive layer were studied with an electron injection layer of ionomers consisting of copolymers of styrene and methylmethacrylate (PS/PMMA) with 3, 6 and 8 mol% degree of sulfonation. The ionomers were able to form very thin films over the emissive layer, with less than 30 nm. Additionally, the presence of ion pairs of ionomer suppresses the tendency toward dewetting of the thin film of ionomer (similar to 10 nm) which can cause malfunction of the device. The effect of the ionomers was investigated as a function of the ion content. The devices performance, characterized by their current density and luminance intensity versus voltage, showed a remarkable increase with the ionomer layer up to 6 mol% of ionic groups, decreasing after that for the 8 mol% ionomer device. The study of the impedance spectroscopy in the frequency range from 0.1 to 10(6) Hz showed that the injection phenomena dominate over the transport in the electroluminescent polymer bulk. (c) 2006 Elsevier B.V. All rights reserved.

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Polymer light-emitting devices (PLEDs) have been produced with Langmuir-Blodgett (LB) films from poly(2-methoxy-5-hexyloxy)-p-phenylenevinylene (OC1OC6-PPV) as the emissive layer and an ionomer of a copolymer of styrene and methylmethacrylate (PS/PMMA) as an electron-injection layer. The main features of such devices are the low operating voltages, obtainable firstly due to the good quality of the ultrathin LB films that allows PLEDs to be produced reproducibly and secondly due to the improved electrical and luminance properties brought by the electron-injection layer. Also demonstrated is the superior performance of an all-LB device compared to another one produced with cast films of the same materials. Published by Elsevier B.V.

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A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.

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Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

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An increase of the reports involving mimetic systems has been observed. Briefly, these systems use biological phospholipids to exploit specific interactions between membrane-models and drugs. Here, the Layer-by-Layer (LbL) and Langmuir techniques were used to investigate the interaction between cardiolipin (CLP-negative phospholipid) and a cationic-like drug methylene blue (MB). Supported by a cationic polyelectrolyte (PAH), LbL films containing PAH/(CLP + MB) and PAH/(CLP + MB + AgNP) were grown up to 14 bilayers. The optical microscopy analysis revealed a decrease of the CLP vesicle sizes in the presence of MB as a possible consequence of the MB action onto the mechanical properties of the CLP membrane. From FTIR spectra, changes mainly related to peak position and band intensity and shape were observed in the spectra from PAH/CLP when in the presence of MB. The latter supports that the interactions between the phosphate and amine charged groups from CLP and PAH, respectively, established during the LbL film fabrication, besides the CLP hydrocarbon environment, are influenced by the presence of MB. Using the micro-Raman technique, a chemical mapping was build based on MB spectrum by resonance Raman scattering (RRS) and surface-enhanced resonance Raman scattering (SERRS). The later phenomenon was activated by Ag nanoparticles (AgNPs) trapped within the LbL film allowing collecting spectra for a single bilayer of PAH/(CLP + MB + AgNP). A rough estimation showed a SERRS amplification of 10(3) in comparison to RRS spectra. As a complementary approach, Langmuir films of CLP in the presence of co-spread MB were investigated through surface pressure vs mean molecular area (pi-A) isotherms. The results showed that for concentrations of MB below 100 mol%, the drug is expelled to water subphase for high values of surface pressure (condensed phase). For concentration at 100% and higher, the MB keeps bound to CLP floating monolayer. (C) 2010 Elsevier B.V. All rights reserved.

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An amperometric oxygen sensor based on a polymeric nickel-salen (salen = N,N '-ethylenebis(salicydeneiminato)) film coated platinum electrode was developed. The sensor was constructed by electropolymerization of nickel-salen complex at a platinum electrode in acetonitrile/tetrabuthylamonium perchlorate by cyclic voltammetry. The voltammetric behavior of the modified electrode was investigated in 0.5 mol L-1 KCl solution in the absence and presende of molecular oxygen. A significant increased of cathodic peak current (at -0.20 vs. SCE) of the modified electrode with addition of oxygen to the solution was observed. This result shows that the nickel-salen film on the surface of the electrode promotes the reduction of oxygen. The reaction can be brought about electrochemically where in the nickel(II) complex is first reduced to a nickel(I) complex at the electrode surface. The nickel(I) complex then undergoes a catalytic oxidation by the oxygen molecular in solution back to the nickel(II) complex, which can then be electrochemically re-reduced to produce an enhancement of the cathodic current. The plot of the cathodic current versus the dissolved oxygen concentration for chronoamperometry (potential fixed = -0.20 V) at the sensor was linear in the concentration range of 3.95 to 9.20 mg L-1 with concentration limit of 0.17 mg L-1 O-2. The modified electrode proposed is useful for the quality control and routine analysis of dissolved oxygen in commercial water and environmental water samples. The results obtained for the levels of dissolved oxygen are in agreement with the results obtained with an O-2 commercial sensor. (C) 2011 Published by Elsevier Ltd.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)