3 resultados para complementary metal oxide semiconductor
em Universidade Federal do Rio Grande do Norte(UFRN)
Resumo:
In this work, the transmission line method is explored on the study of the propagation phenomenon in nonhomogeneous walls with finite thickness. It is evaluated the efficiency and applicability of the method, considering materials like gypsum, wood and brick, found in the composition of the structures of walls in question. The results obtained in this work are compared to those available in the literature, for several particular cases. A good agreement is observed, showing that the performed analysis is accurate and efficient in modeling, for instance, the wave propagation through building walls and integrated circuit layers in mobile communication and radar system applications. Later, simulations of resistive sheets devices such as Salisbury screens and Jaumann absorbers and of transmission lines made of metal-insulator-semiconductor (MIS) are made. Thereafter, it is described a study on frequency surface selective structures (FSS). It is proposed the development of devices and microwave integrated circuits (MIC) of such structures, for the accomplishment of experiments. Finally, future works are suggested, for instance, on the development of reflectarrays, frequency selective surfaces with dissimilar elements, and coupled frequency selective surfaces with elements located on different layers
Resumo:
Metal ceramic restorations matches aesthetic and strength, and in your making occurs an interface oxide layer, wetting resulting and atomic and ionic interactions resulting between metal, oxide and porcelain. However, frequent clinical fails occurs in this restoration type, because lost homogeneous deposition oxide layer and lost interface bond. Thus, in this study, thought depositate homogeneous oxide films above Ni-Cr samples surfaces polite previously, at plasma oxide environment. Six samples was oxided at 300 and 400ºC at one hour, and two samples was oxided in a comum chamber at 900ºC, and then were characterized: optical microscopic, electronic microscopic, micro hardness, and X ray difratometry. Colors stripes were observed at six samples plasma oxided and a grey surface those comum oxided, thus like: hardness increase, and several oxides from basic metals (Ni-Cr)
Resumo:
Hybrid systems formed from polymers and transition metals have now their physical and chemical properties extensively investigated for use in electronic devices. In this work, Titanium Dioxide (TiO2) from the precursor of titanium tetrabutoxide and the composite system Poly(Ethylene Glycol)-Titanium Dioxide (TiO2-PEG) were synthesized by sol-gel method. The PEG as acquired and TiO2 and composites powders were analyzed by X-Ray Diffraction (XRD), Spectroscopy in the Infrared region with Fourier transform (IRFT), Thermogravimetric Analysis (TGA), Scanning Electron Microscopy (SEM) and Electrochemical Impedance Spectroscopy (EIS). In the XRD analysis were observed in the TiO2 crystal faces of one of its polymorphs - anatase phase, crystal planes in Poly (Ethylene Glycol) with considerable intensity and in the composite systems the mixture of crystal faces of their precursors isolated and reduction of crystallinity. The TG / DTG suggested increasing the thermal instability of PEG in the composite powders as TiO2 is incorporated into the system. Spectral analysis presented in the infrared overlapping bands for the polymer and metal oxide, reducing the intensity of symmetric stretching of ligand groups in the main chain polymer and angular deformations; were observed using SEM micrographs of the morphological changes suffered by composite systems with the variation of the oxide concentration. Analyses by impedance spectroscopy indicated that the increased conductivity in composite occurs in line with the addition of the metal oxide concentration in the composite system