Estudo de sistemas vítreos para infiltração em alumina

The system in-Ceram Alumina, produced by VITA, consists in a technique of prepare of a substructure of ceramics to dental crowns. First burning is made in the alumina decanted by slip casting process under a stone die that reproduces the tooth prepared to receive a crown. In a second burning, alumina is infiltrated by vitreous system, giving to this set a high mechanic resistance. In this work, it s made a study of the composition of a new infiltrating material more used nowadays, giving to alumina desirable mechanics proprieties to its using like substructure of support to ceramic s crown used in the market today. The addition of Lanthanum oxide (frit A) and calcium oxide (frit B) was made in attempt to increase the viscosity of LZSA and to reduce fusion temperature. The frits were put over samples of alumina and took to the tubular oven to 1400ºC under vacuum for two groups (groups 1 and 2). For another two groups (groups 3 and 4) it was made a second infiltration, following the same parameters of the first. A fifth group was utilized like group of control where the samples of pure alumina were not submitted to any infiltrating process. Glasses manifested efficient both in quality and results of analysis of mechanic resistance, being perfectly compatible with oral environment in this technical requisite. The groups that made a second infiltration had he best results of fracture toughness, qualify the use in the oral cavity in this technical question. The average of results achieved for mechanic resistance to groups 1, 2, 3, 4 and 5 were respectively 98 MPa, 90 MPa, 144 MPa, 236 MPa and 23 MPa

Construção de um aparato experimental para monitoramento in situ da deposição de filmes finos de titânio por magnetron sputtering

The technique of surface coating using magnetron sputtering is one of the most widely used in the surface engineering, for its versatility in obtaining different films as well as in the micro / nanometric thickness control. Among the various process parameters, those related to the active species of the plasma are of the most fundamental importance in the mechanism and kinetics of deposition. In order to identify the active species of the plasma, parameters such as gas flow, pressure and density of electric power were varied during titanium coating on glass substrate. By flowing argon gas of 10, 20, 30, 40 and 50 sccm (cubic centimeters per minute) for each gas flow a sequential scan of the electric current of 0.10, 0.20, 0.30, 0.40 , 0.50 A. The maximum value of 0.50 A was chosen based both on literature data and on limitations of the equipment. The monitoring of plasma species present during the deposition was carried out in situ by the technique of optical emission spectroscopy (OES) through the spectrometer Ocean Optics USB2000 Series. For this purpose, an apparatus was developed to adapt the OES inside the plasma reactor to stay positioned closest to the target. The radiations emitted by the species were detected by an optical fiber placed behind the glass substrate and their intensities as a function of wavelength were, displayed on a monitor screen. The acquisition time for each condition of the plain parameters was related to the minima of spectral lines intensities due to the film formed on the substrate. The intensities of different emission lines of argon and titanium were then analyzed as a function of time, to determine the active species and estimate the thickness of the deposited films. After the deposition, the coated glasses thin films were characterized by optical transmittance through an infrared laser. It was found that the thickness and deposition rate determined by in situ analysis were consistent with the results obtained by laser transmittance

Desenvolvimento de substrato cerâmico BiNbO4 para antenas de microfita de sistemas de comunicações sem fio

The main purpose of this work was the development of ceramic dielectric substrates of bismuth niobate (BiNbO4) doped with vanadium pentoxide (V2O5), with high permittivity, used in the construction of microstrip patch antennas with applications in wireless communications systems. The high electrical permittivity of the ceramic substrate provided a reduction of the antenna dimensions. The numerical results obtained in the simulations and the measurements performed with the microstrip patch antennas showed good agreement. These antennas can be used in wireless communication systems in various frequency bands. Results were satisfactory for antennas operating at frequencies in the S band, in the range between 2.5 GHz and 3.0 GHz.

Propriedades Físicas do Semicondutor Bi2Te3

Thermoelectric Refrigerators (TEC Thermoelectric Cooling) are solid-state heat pumps used in applications where stabilization of temperature cycles or cooling below the room temperature are required. TEC are based on thermoelectric devices, and these in turn, are based on the Peltier effect, which is the production of a difference in temperature when an electric current is applied to a junction formed by two non-similar materials. This is one of the three thermoelectric effects and is a typical semiconductor junction phenomenon. The thermoelectric efficiency, known as Z thermoelectric or merit figure is a parameter that measures the quality of a thermoelectric device. It depends directly on electrical conductivity and inversely on the thermal conductivity. Therefore, good thermoelectric devices have typically high values of electrical conductivity and low values of thermal conductivity. One of the most common materials in the composition of thermoelectric devices is the semiconductor bismuth telluride (Bi2Te3) and its alloys. Peltier plates made up by crystals of semiconductor P-type and N-type are commercially available for various applications in thermoelectric systems. In this work, we characterize the electrical properties of bismuth telluride through conductivity/resistivity of the material, and X-rays power diffraction and magnetoresistance measurements. The results were compared with values taken from specific literature. Moreover, two techniques of material preparation, and applications in refrigerators, are discussed

Efeito Peltier em estruturas semicondutoras quasiperiódicas

There is nowadays a growing demand for located cooling and stabilization in optical and electronic devices, haul of portable systems of cooling that they allow a larger independence in several activities. The modules of thermoelectrical cooling are bombs of heat that use efect Peltier, that consists of the production of a temperature gradient when an electric current is applied to a thermoelectrical pair formed by two diferent drivers. That efect is part of a class of thermoelectrical efcts that it is typical of junctions among electric drivers. The modules are manufactured with semiconductors. The used is the bismuth telluride Bi2Te3, arranged in a periodic sequence. In this sense the idea appeared of doing an analysis of a system that obeys the sequence of Fibonacci. The sequence of Fibonacci has connections with the golden proportion, could be found in the reproductive study of the bees, in the behavior of the light and of the atoms, as well as in the growth of plants and in the study of galaxies, among many other applications. An apparatus unidimensional was set up with the objective of investigating the thermal behavior of a module that obeys it a rule of growth of the type Fibonacci. The results demonstrate that the modules that possess periodic arrangement are more eficient

Filmes nanométricos de FeN e ALN crescidos por sputtering e aplicações do efeito peltier

This study will show the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3). Of great technological interest to the high-density magnetic recording industry, the FeN system represents one of the most important magnetic achievements; however, diversity of the phases formed makes it difficult to control its magnetic properties during production of devices. We investigated the variation in these properties using ferromagnetic resonance, MOKE and atomic force microscopy (AFM), as a function of nitrogen concentration in the reactive gas mixture. Aluminum nitride, a component of widegap semiconductors and of considerable interest to the electronic and optoelectronic industry, was grown on nanometric thin film for the first time, with good structural quality by non-reactive rf sputtering of a pure AlN target at low power (≈ 50W). Another finding in this study is that a long deposition time for this material may lead to film contamination by materials adsorbed into deposition chamber walls. Energy-dispersive X-ray (EDX) analysis shows that the presence of magnetic contaminants from previous depositions results in grown AlN semiconductor films exhibiting magnetoresistance with high resistivity. The Peltier effect applied to commercially available compact refrigeration cells, which are efficient for cooling small volumes, was used to manufacture a technologically innovative refrigerated mini wine cooler, for which a patent was duly registered