Controlled growth of zinc nanowires

Zinc nanowires have been synthesized by heating a mixture of boron and zinc oxide (ZnO) powders at 1050 °C under a nitrogen atmosphere. The influences of the gas flow rate and the substrate character on the nanowire formation were investigated. It was found that higher-flow rate of gas led to the formation of thinner nanowires; while lower-flow rate of gas produced thicker nanowires and even particles due to the higher partial pressure of Zn vapor in this case. Zn nanowires can be produced on alumina and quartz substrates, but not on a stainless-steel substrate under the same or different synthetic conditions. Photoluminescence measurements were conducted on Zn nanowires and particles and weak emission bands at 482 and 493 nm were observed, which may be contributed by the thin ZnO film on the nanowire surface.

Direct synthesis, growth mechanism, and optical properties of 3D AlN nanostructures with urchin shapes

Aluminum nitride (AƖN) nanostructures have shown novel physical and chemical properties that are essential for technological applications. We report a vapor-solid growth of novel three-dimensional (3D) A1N urchin-like nanostmcture in DC arc plasma via the direct reaction between Al vapor and N₂ gas without any catalyst or template. The as-prepared 3D A1N nanostructures which have urchin-like shapes consist of numerous microdaggers with sharp tips and lengths of up to several micrometers and widths of 0.5-2 µm. A growth mechanism of A1N nanostructures with urchin shapes was suggested and explained in detail. The optical properties of the AƖN nanostructures with urchin shapes were also studied with photoluminescence spectrum, which reveals a broad emission, suggesting potential applications in electronic and optoelectronic nanodevices.

One-Step synthesis of the pine-shaped nanostructure of aluminum nitride and its photoluminescence properties

An array of pine-shaped nanostructures of aluminum nitride (AlN) was synthesized through direct reaction between Al vapor and nitrogen gas in direct current (DC) arc discharge plasma without any catalyst or template. The as-prepared nanostructure consists of many pine-needle-shaped leaves with conical shape tips. The structure, morphology, and optical property of the nanostructure have been characterized by X-ray powder diffraction, energy-dispersive X-ray spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and photoluminescence. A possible growth mechanism of the pine-shaped nanostructure was discussed. Two factors were found to be essential for branched nanostructure growth, i.e., the reaction time and N2 pressure. The photoluminescence spectrum of the nanostructure of AlN revealed an intense emission band, suggesting that there may be potential applications in electronic and optoelectronic nanodevices.