Formation of defects in boron nitride by low energy ion bombardment

Formation of defects in hexagonal and cubic boron nitride (h -BN and c -BN, respectively) under low-energy argon or nitrogen ion-bombardment has been studied by near-edge x-ray absorption fine structure (NEXAFS) around boron and nitrogen K -edges. Breaking of B-N bonds for both argon and nitrogen bombardment and formation of nitrogen vacancies, VN, has been identified from the B K -edge of both h -BN and c -BN, followed by the formation of molecular nitrogen, N2, at interstitial positions. The presence of N 2 produces an additional peak in photoemission spectra around N 1s core level and a sharp resonance in the low-resolution NEXAFS spectra around N K -edge, showing the characteristic vibrational fine structure in high-resolution measurements. In addition, several new peaks within the energy gap of BN, identified by NEXAFS around B and N K -edges, have been assigned to boron or nitrogen interstitials, in good agreement with theoretical predictions. Ion bombardment destroys the cubic phase of c -BN and produces a phase similar to a damaged hexagonal phase. © 2009 American Institute of Physics.

Tuning the grade of graphene: Gamma ray irradiation of free-standing graphene oxide films in gaseous phase

A direct approach to functionalize and reduce pre-shaped graphene oxide 3D architectures is demonstrated by gamma ray irradiation in gaseous phase under analytical grade air, N2 or H2. The formation of radicals upon gamma ray irradiation is shown to lead to surface functionalization of the graphene oxide sheets. The reduction degree of graphene oxide, which can be controlled through varying the γ-ray total dose irradiation, leads to the synthesis of highly crystalline and near defect-free graphene based materials. The crystalline structure of the graphene oxide and γ-ray reduced graphene oxide was investigated by x-ray diffraction and Raman spectroscopy. The results reveal no noticeable changes in the size of sp2 graphitic structures for the range of tested gases and total exposure doses suggesting that the irradiation in gaseous phase does not damage the graphene crystalline domains. As confirmed by X-ray photoemission spectroscopy, the C/O ratio of γ-ray reduced graphene oxide is increasing from 2.37 for graphene oxide to 6.25 upon irradiation in hydrogen gas. The removal of oxygen atoms with this reduction process in hydrogen results in a sharp 400 times increase of the electrical conductivity of γ-ray reduced graphene oxide from 0.05 S cm-1 to as high as 23 S cm-1. A significant increase of the contact angle of the γ-ray reduced graphene oxide bucky-papers and weakened oxygen rich groups characteristic peaks across the Fourier transform infrared spectra further illustrate the efficacy of the γ-ray reduction process. A mechanism correlating the interaction between hydrogen radicals formed upon γ-ray irradiation of hydrogen gas and the oxygen rich groups on the surface of the graphene oxide bucky-papers is proposed, in order to contribute to the synthesis of reduced graphene materials through solution-free chemistry routes.

The high renaissance properties of porous three dimensional graphene using one step reduction and its application in flexible conductor

 A super conductive graphene with continuous three dimensional (3D) porous structures that can potentially be used as flexible conductors has been produced by one step reduction of graphene oxide (GO) film. The high renaissance properties have been demonstrated by mechanical and electrical results where a noticeable increase in the electrical conductivity to 3850 S/cm has been demonstrated after embedding the 3D graphene foam into nearly insulated polydimethylsiloxane (PDMS). The graphene integrated PDMS film has a higher strain up to 100% elongation compared with the strain of only 60% for PDMS. Fourier transform infrared (FTIR) and x-ray photoemission spectroscopy (XPS) results reveal that most oxidized groups have been removed, which contributes to the renaissance of most outstanding properties of graphene because of the recovery of sp2 carbon structures.