104 resultados para manganese nitride

em Deakin Research Online - Australia


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The oxidations of twenty five organic and inorganic species, with solublised manganese(IV), were found to elicit analytically useful chemiluminescence with detection limits (3 × S/N) for Mn(II), Fe(II), morphine and codeine of 5 × 10–8 M, 2.5 × 10–7 M, 7.5 × 10–8 M and 5 × 10–8 M, respectively. Additionally, the corrected spectra from four different analytes gave wavelengths of maximum emission in the range from 733 nm up to 740 nm suggesting that all these chemiluminescence reactions shared a common emitting species.

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Chemiluminescence was observed during the manganese(III), (IV) and (VII) oxidations of sodium tetrahydroborate, sodium dithionite, sodium sulfite and hydrazine sulfate in acidic aqueous solution. From the corrected chemiluminescence spectra, the wavelengths of maximum emission were 689±5 and 734±5 nm when the reactions were performed in sodium hexametaphosphate and sodium dihydrogenorthophosphate/ orthophosphoric acid environments, respectively. The corrected phosphorescence spectrum of manganese(II) sulfate in a solution of sodium hexametaphosphate at 77 K exhibited two peaks with maxima at 688 and 730 nm. The chemical and spectroscopic evidence presented strongly supported the postulation that the emission was an example of solution-phase chemically induced phosphorescence of manganese(II) thereby, confirming earlier predictions that the chemiluminescence from acidic potassium permanganate reactions originated from an excited manganese(II) species.

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The limits of detection (3s) for ascorbic acid were 5×10−8 M with acidic potassium permanganate using both flow injection analysis (FIA) and sequential injection analysis (SIA) whereas the soluble manganese(IV) afforded 1×10−8 M and 5×10−9 M for FIA and SIA, respectively. Determinations of ascorbic acid in Vitamin C tablets were achieved with minimal sample pretreatment using a standard additions calibration and gave good agreement with those of iodimetric titration.

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We present the results of our investigations into the use of soluble manganese(IV) as a chemiluminescence reagent, which include a significantly faster method of preparation and a study on the effect of formaldehyde and orthophosphoric acid concentration on signal intensity. Chemiluminescence detection was applied to the determination of 16 analytes, including opiate alkaloids, indoles and analytes of forensic interest, using flow injection analysis methodology. The soluble manganese(IV) reagent was less selective than either acidic potassium permanganate or tris(2,2′-bipyridyl)ruthenium(III) and therefore provided a more universal chemiluminescence detection system for HPLC. A broad spectral distribution with a maximum at 730 ± 5 nm was observed for the reaction between the soluble manganese(IV) and a range of analytes, as well as the background emission from the reaction with the formaldehyde enhancer. This spectral distribution matches that reported for chemiluminescence reactions with acidic potassium permanganate, where a manganese(II) emitting species was elucidated. This provides further evidence that the emission evoked in reactions with soluble manganese(IV) also emanates from a manganese(II) species, and not bimolecular singlet oxygen as suggested by previous authors.

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Ionic liquids 1-butyl-3-methylimidazolium tetrafluoroborate [bmIm][BF4] and 1-butyl-3-methylimidazolium hexafluorophosphate [bmIm][PF6] were evaluated as reaction media for allylic and benzylic oxidation reactions using manganese dioxide. The use of ionic liquids as an extractant in the reaction work-up was also investigated. Procedures for recycling of the [bmIm][PF6] ionic liquids used in these MnO2 oxidation reactions were also developed.

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Boron nitride (BN) nanotubes have the same nanostructure as carbon nanotubes but are found to exhibit significant resistance to oxidation at high temperatures. Our systematic study has revealed that BN nanotubes are stable at 700 °C in air and that some thin nanotubes (diameter less than 20 nm) with perfect multiwalled cylindrical structure can survive up to 900 °C. Thermogravimetric analysis reveals an onset temperature for oxidation of BN nanotubes of 800 °C compared with only 400 °C for carbon nanotubes under the same conditions. This more pronounced resistance of BN nanotubes to oxidation is inherited from the hexagonal BN and also depends on the nanocrystalline structure. This high level of resistance to oxidation allows promising BN nanotube applications at
high temperatures

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We demonstrate a simple and effective approach for growing large-scale, high-density, and well-patterned conical boron nitride nanorods. A catalyst layer of Fe(NO3)3 was patterned on a silicon substrate by using a copper grid as a mask. The nanorods were grown via annealing milled boron carbide powders at 1300 °C in a flow of nitrogen gas. The as-grown nanorods exhibit uniform morphology and the catalyst pattern precisely defines the position of nanorod deposition. Cathodoluminescence (CL) spectra of the nanorods show two broad emission bands centered at 3.75 and 1.85 eV. Panchromatic CL images reveal clear patterned structure

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Photoluminescent (PL) and optical absorption spectra of high-yield multi-wall BN nanotubes (BNNTs) were systematically investigated at room temperature in comparison with commercial hexagonal BN (h-BN) powder. The direct band gap of the BNNTs was determined to be 5.75 eV, just slightly narrower than that of h-BN powder (5.82 eV). Two Frenkel excitons with the binding energy of 1.27 and 1.35 eV were also determined. However, they were not a distinctive characteristic of the BNNTs as reported previously. Observed broad UV–visible–NIR light emission demonstrates the potential of the BNNTs as a nano light source.

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A purification process was developed for the first time for boron nitride (BN) nanotubes. BN nanotubes, prepared using a ball milling and annealing method, contain a high yield of nanotubes and a small amount of BN and metal catalyst particles. The metal particles can be dissolved in an HCl solution. Fine BN nanoparticles and thin layers were first converted to water soluble B2O3 via a partial oxidation treatment at 800 °C. The oxide particles and layers can then be dissolved in hot water. Thermogravimetric analysis has been used to determine an adequate oxidation temperature at which fine BN particles were oxidized.

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When growing one-dimensional (1D) nanomaterials via the vapour–liquid–solid (VLS) model, the substrates usually need to be coated with a layer of catalyst film. In this study, however, an effective approach for the synthesis of boron nitride (BN) nanowires directly onto commercial stainless-steel foils has been demonstrated. Growth occurs by heating boron and zinc oxide (ZnO) powders at 1100 °C under a mixture of nitrogen and hydrogen gas flow (200 ml min−1). The stainless-steel foils played an additional role of catalyst besides substrate during the VLS growth of these BN nanowires. The as-synthesized nanowires emit strong photoluminescence (PL) bands at 515, 535 and 728 nm. In addition, we found that the gas flow rate and the hydrogen content in the gas mixture strongly affected the diameter and yield of the nanowires by changing the relative concentration of the nanowire growth species in the chamber.

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A thick layer of pure boron nitride (BN) nanowires with a uniform diameter of 20 nm was synthesized for the first time using a CVD process with a new precursor of boron triiodide (BI3). Transmission electron microscopy revealed a nanocrystalline structure in the BN nanowires and the absence of any catalyst particle. Some BN nanowires self-assembled into thick threads up to several hundred micrometres long on top of the nanowire layer. The nitriding reactions and lack of catalyst suggest new formation mechanisms of the BN nanowires.

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We reported 11B nuclear magnetic resonance studies of boron nitride (BN) nanotubes prepared by mechano-thermal route. The NMR lineshape obtained at 192.493 MHz (14.7 T) was fitted with two Gaussian functions, and the 11B nuclear magnetization relaxations were satisfied with the stretched–exponential function, exp[-(tlT1)(D+1)/6] (D: space dimension) at all temperatures. In addition, the temperature dependence of spin–lattice relaxation rates was well described by Ti-1 = aT (a: constant, T: temperature) and could be understood in terms of direct phonon process. All the 11BNMR results were explained by considering the inhomogeneous distribution of the paramagnetic metal catalysts, such as α-Fe, Fe–N, and Fe2 B, that were incorporated during the process of high-energy ball milling of boron powder and be synthesized during subsequent thermal annealing. X-ray powder diffraction as well as electron paramagnetic resonance (EPR) on BN nanotubes were also conducted and the results obtained supported these conclusions.

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Boron nitride (BN) nanotubes of different sizes and tubular structures exhibit very different mechanical and chemical properties, as well as different applications. BN nanotubes of different sizes and nanostructures have been produced in different nitriding gases in a milling and annealing process, in which elemental boron powder was first milled in NH3 for 150 h and subsequently annealed at 1,200 °C for 6 h. The influence of nitriding gases was investigated by using N2, NH3, N2–H2 mixture gases. A relatively slow nitriding reaction in NH3 gas leaded to a 2D growth of BN (002) basal planes and the formation of thin BN nanotubes without the help of metal catalysts. Fast nitriding reactions occurred in N2 or N2–H2 mixture gases, catalyzed by metal particles, resulted in 3D crystal growth and the formation of many large cylindrical and bamboo tubes.

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We present the electron field-emission (FE) characteristics of conical boron nitride nanorods grown on a (1 0 0) n-type silicon substrate. The emission current can be up to ~60 µA at an applied voltage of ~3 kV. Two distinct slopes are evident in the Fowler–Nordheim (FN) plot. The FE characteristics can be explained using a site-related tunnelling-controlled mechanism. The occurrence of two FN slopes is attributed to the switchover from tip emission to side emission, which results from the differences in interface barrier, geometry, as well as the total emission area of the two emission interfaces.