Mechanochemical synthesis and characterization of GaN nanocrystals

A solid-state displacement reaction of Ga₂O₃ with Mg₃N₂ has been used to synthesize GaN nanocrystals by mechanochemical processing. X-ray diffraction, transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements indicated that the nanocrystals had a hexagonal structure and sizes ranging from 4 to 20thinspnm. Optical absorption and transmission measurement showed the bandgap of the nanocrystals was consistent with that of bulk GaN samples (3.43thinspeV). This study  demonstrates that mechanochemical processing has significant potential for the synthesis of GaN nanocrystals in a simple and efficient way.

Unusual spectroscopic properties of PPE/TiO2 composite and its sensor response to TNT

A composite from a broad bandgap polymer, poly(phenylene ethylene) (PPE), and nano-sized TiO₂ particles was found to be able to sense 2,4,6-trinitrotoluene (TNT) for TNT sensor. Fluorescence quenching induced by charge transfer from PPE to nano-sized TiO₂ was observed in toluene solution. At high TiO₂ composition, a strong exciplex band occurred at 550 nm. Under prolonged light irradiation at 400 nm, unusual fluorescence gains took place at 460 nm, companied with a very small change in the UV–vis absorbance. After 30 min light irradiation, the fluorescence at 460 nm reached a maximum, but the peak at 550 nm disappeared. This composite showed amplified sensor response to TNT compared to the pristine PPE film, which can be potentially used as sensing material for detecting TNT based explosives.

Narrowed bandgaps and stronger excitonic effects from small boron nitride nanotubes

The bandgap of boron nitride nanotubes (BNNTs) is generally considered to be independent on tube radius and chirality. However, we have observed that the bandgaps of BNNTs do depend on the tube size. Photoluminescence excitation spectroscopy with variable photon energies in vacuum ultraviolet (VUV) range revealed that the bandgap becomes smaller when the tube diameter decreases. This is consistent with red-shifted luminescent emissions. The strong interactions between excitons and phonons are possibly responsible for the bandgap narrowing as the function of nanotube size. 2009 Elsevier B.V. All rights reserved.

GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization

Semiconducting GaN and Gax In1-x N nanoparticles (4-10 nm in diameter, depending on the metal ratio) with tunable indium content are prepared through a chemical synthesis (the urea-glass route). The bandgap of the ternary system depends on its composition, and therefore, the color of the final material can be turned from bright yellow (the color of pure GaN) to blue (the color of pure InN). Transmission electron microscopy (TEM and HRTEM) and scanning electron microscopy (SEM) images confirm the nanoparticle character and homogeneity of the as-prepared samples. X-ray diffraction (XRD), electron diffraction (EDX), elemental mapping, and UV/Vis, IR, and Raman spectroscopy investigations are used to confirm the incorporation of indium into the crystal structure of GaN. These nanoparticles, possessing adjusted optical properties, are expected to have potential applications in the fabrication of novel optoelectronic devices.

Theoretical study of quantum capacitance and associated delay in armchair-edge graphene nanoribbons

This work presents a comprehensive investigation of the quantum capacitance and the associated effects on the carrier transit delay in armchair-edge graphene nanoribbons (A-GNRs) based on semi-analytical method. We emphasize on the realistic analysis of bandgap with taking edge effects into account by means of modified tight binding (TB) model. The results show that the edge effects have significant influence in defining the bandgap which is a necessary input in the accurate analyses of capacitance. The quantum capacitance is discussed in both nondegenerate (low gate voltage) and degenerate (high gate voltage) regimes. We observe that the classical capacitance limits the total gate (external) capacitance in the degenerate regime, whereas, quantum capacitance limits the external gate capacitance in the nondegenerate regime. The influence of gate capacitances on the gate delay is studied extensively to demonstrate the optimization of switching time. Moreover, the high-field behavior of a GNR is studied in the degenerate and nondegenerate regimes. We find that a smaller intrinsic capacitance appears in the channel due to high velocity carrier, which limits the quantum capacitance and thus limit the gate delay. Such detail analysis of GNRs considering a realistic model would be useful for the optimized design of GNR-based nanoelectronic devices.

Single layer lead iodide : computational exploration of structural, electronic and optical properties, strain induced band modulation and the role of spin-orbital-coupling

Graphitic like layered materials exhibit intriguing electronic structures and thus the search for new types of two-dimensional (2D) monolayer materials is of great interest for developing novel nano-devices. By using density functional theory (DFT) method, here we for the first time investigate the structure, stability, electronic and optical properties of monolayer lead iodide (PbI2). The stability of PbI2 monolayer is first confirmed by phonon dispersion calculation. Compared to the calculation using generalized gradient approximation, screened hybrid functional and spin-orbit coupling effects can not only predicts an accurate bandgap (2.63 eV), but also the correct position of valence and conduction band edges. The biaxial strain can tune its bandgap size in a wide range from 1 eV to 3 eV, which can be understood by the strain induced uniformly change of electric field between Pb and I atomic layer. The calculated imaginary part of the dielectric function of 2D graphene/PbI2 van der Waals type hetero-structure shows significant red shift of absorption edge compared to that of a pure monolayer PbI2. Our findings highlight a new interesting 2D material with potential applications in nanoelectronics and optoelectronics.