Metallic ternary telluride with sphalerite superstructure

A new ternary compound with composition Cu5Sn2Te7 has been synthesized using the stoichiometric reaction of Cu, Sn, and Te. The compound crystallizes in C2 space group with unit cell parameters of a = 13.549(2) Å, b = 6.0521(11) Å, c = 9.568(2) Å, and β = 98.121(2)°. Cu5Sn2Te7 is a superstructure of sphalerite and exhibits tetrahedral coordination of Cu, Sn, and Te atoms, containing a unique adamantane-like arrangement. The compound is formally mixed valent with a high electrical conductivity of 9.8 × 10(5) S m(-1) at 300 K and exhibits metallic behavior having p-type charge carriers as indicated from the positive Seebeck coefficient. Hall effect measurements further confirm holes as charge carriers with a carrier density of 1.39 × 10(21) cm(-3) and Hall mobility of 4.5 cm(2) V(-1) s(-1) at 300 K. The electronic band structure calculations indicate the presence of a finite density of states around the Fermi level and agree well with the p-type metallic conductivity. Band structure analysis suggests that the effective mass of the hole state is small and could be responsible for high electronic conductivity and Hall mobility. The high thermal conductivity of 15.1 W m(-1) K(-1) at 300 K coupled with the low Seebeck coefficient results in a poor thermoelectric figure of merit (ZT) for this compound. Theoretical calculations indicate that if Cu5Sn2Te7 is turned into a valence precise compound by substituting one Cu by a Zn, a semiconducting material, Cu4ZnSn2Te7, with a direct band gap of ∼ 0.5 eV can be obtained.

Facile preparation and thermoelectric properties of Bi₂Te₃ based alloy nanosheet/PEDOT:PSS composite films

Bi2Te3 based alloy nanosheet (NS)/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) composite films were prepared separately by spin coating and drop casting techniques. The drop cast composite film containing 4.10 wt % Bi2Te3 based alloy NSs showed electrical conductivity as high as 1295.21 S/cm, which is higher than that (753.8 S/cm) of a dimethyl sulfoxide doped PEDOT:PSS film prepared under the same condition and that (850-1250 S/cm) of the Bi2Te3 based alloy bulk material. The composite film also showed a very high power factor value, ∼32.26 μWm(-1) K(-2). With the content of Bi2Te3 based alloy NSs increasing from 0 to 4.10 wt %, the electrical conductivity and Seebeck coefficient of the composite films increase simultaneously.

Double horizons : shifting figure and ground in some Australian photography

"Rogue" figure skews attainment data

The ABS higher education attainment data has been skewed by a statistical blip that artificially inflated the 2009 figure, according to higher education researcher Alan Olsen.

Thermoelectric fabrics: toward power generating clothing.

Herein, we demonstrate that a flexible, air-permeable, thermoelectric (TE) power generator can be prepared by applying a TE polymer (e.g. poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)) coated commercial fabric and subsequently by linking the coated strips with a conductive connection (e.g. using fine metal wires). The poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) coated fabric shows very stable TE properties from 300 K to 390 K. The fabric device can generate a TE voltage output (V) of 4.3 mV at a temperature difference (ΔT) of 75.2 K. The potential for using fabric TE devices to harvest body temperature energy has been discussed. Fabric-based TE devices may be useful for the development of new power generating clothing and self-powered wearable electronics.

Synthesis of Al-doped Mg2Si1-xSnx compound using magnesium alloy for thermoelectric application

Abstract Mg2Si1-xSnx thermoelectric compounds were synthesized through a solid-state reaction at 700 °C between chips of Mg2Sn-Mg eutectic alloy and silicon fine powders. The Al dopants were introduced by employing AZ31 magnesium alloy that contains aluminum. The as-synthesized Mg2Si1-xSnx powders were consolidated by spark plasma sintering at 650-700 °C. X-ray diffraction and scanning electron microscopy revealed that the Mg2Si1-xSnx bulk materials were comprised of Si-rich and Sn-rich phases. Due to the complex microstructures, the electrical conductivities of Mg2Si1-xSnx are lower than Mg2Si. As a result, the average power factor of Al0.05Mg2Si0.73Sn0.27 is about 1.5 × 10^-3 W/mK² from room temperature to 850 K, being less than 2.5 × 10^-3 W/mK² for Al0.05Mg2Si. However, the thermal conductivity of Mg2Si1-xSnx was reduced significantly as compared to Al0.05Mg2Si, which enabled the ZT of Al0.05Mg2Si0.73Sn0.27 to be superior to Al0.05Mg2Si. Lastly, the electric power generation from one leg of Al0.05Mg2Si and Al0.05Mg2Si0.73Sn0.27 were evaluated on a newly developed instrument, with the peak output power of 15-20 mW at 300 °C hot-side temperature.