GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization

Semiconducting GaN and Gax In1-x N nanoparticles (4-10 nm in diameter, depending on the metal ratio) with tunable indium content are prepared through a chemical synthesis (the urea-glass route). The bandgap of the ternary system depends on its composition, and therefore, the color of the final material can be turned from bright yellow (the color of pure GaN) to blue (the color of pure InN). Transmission electron microscopy (TEM and HRTEM) and scanning electron microscopy (SEM) images confirm the nanoparticle character and homogeneity of the as-prepared samples. X-ray diffraction (XRD), electron diffraction (EDX), elemental mapping, and UV/Vis, IR, and Raman spectroscopy investigations are used to confirm the incorporation of indium into the crystal structure of GaN. These nanoparticles, possessing adjusted optical properties, are expected to have potential applications in the fabrication of novel optoelectronic devices.

Synthesis of an indium oxide nanoparticle embedded graphene three-dimensional architecture for enhanced lithium-ion storage

Indium oxide nanoparticles were synthesised by using a facile and scalable strategy. The as-prepared nanoparticles (20-40 nm) were in situ and homogeneously distributed in a three-dimensional (3D) graphene architecture subsequently during the fabrication process. The obtained nanocomposite acts as a high capacity anode material for lithium-ion batteries and demonstrates good cycle stability. A drastically enhanced capacity of 750 mA h g^-1 in comparison with that of bare In2O3 nanoparticles can be maintained after 100 cycles, along with an improved high rate performance (210 mA h g^-1 at 1 A g^-1 and 120 mA h g^-1 at 2 A g^-1). The excellent performance is linked with the indium oxide nanoparticles and the unique 3D interconnected porous graphene structure. The highly conductive and porous 3D graphene structure greatly enhances the performance of lithium-ion batteries by protecting the nanoparticles from the electrolyte, stabilizing the nanoparticles during cycles and buffering the volume expansion upon lithium insertion.

Frontispiece: GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization

Optoelectronic Devices A captivating peculiarity of GaInN alloys is a tunable band gap, depending on the Ga/In ratio, where the pure nitrides are bright yellow (GaN) or dark blue (InN). Gax In1-x N nanoparticles were prepared by a bottom-up approach (the urea glass route). The incorporation of an increasing amount of indium in the GaN structure is indicated by different colors (i.e., different band gaps), and the alloys are further investigated by TEM and optical microscopy. More information can be found in the Full Paper by C. Giordano et al. on page 18976 ff.