Facile preparation and thermoelectric properties of Bi₂Te₃ based alloy nanosheet/PEDOT:PSS composite films

Bi2Te3 based alloy nanosheet (NS)/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) composite films were prepared separately by spin coating and drop casting techniques. The drop cast composite film containing 4.10 wt % Bi2Te3 based alloy NSs showed electrical conductivity as high as 1295.21 S/cm, which is higher than that (753.8 S/cm) of a dimethyl sulfoxide doped PEDOT:PSS film prepared under the same condition and that (850-1250 S/cm) of the Bi2Te3 based alloy bulk material. The composite film also showed a very high power factor value, ∼32.26 μWm(-1) K(-2). With the content of Bi2Te3 based alloy NSs increasing from 0 to 4.10 wt %, the electrical conductivity and Seebeck coefficient of the composite films increase simultaneously.

Transmission electron microscopy investigation of substitution reactions from carbon nanotube template to silicon carbide nanowires

Substitution reactions between multiwalled carbon nanotubes and silicon monoxide vapour have been investigated using transmission electron microscopy. Different reactions occurred inside the multiwalled nanotubes and on the nanotube external surfaces, resulting in the formation of silicon carbide nanowires with a core–shell structure. The substitution reaction process and end products are strongly affected by nanotube structures and a ball milling treatment of the starting materials.

Boron carbide nanowires with uniform CNχ coatings

Boron carbide nanowires with uniform carbon nitride coating layers were synthesized on a silicon substrate using a simple thermal process. The structure and morphology of the as-synthesized nanowires were characterized using x-ray diffraction, scanning and transmission electron microscopy and electron energy loss spectroscopy. A correlation between the surface smoothness of the nanowire sidewalls and their lateral sizes has been observed and it is a consequence of the anisotropic formation of the coating layers. A growth mechanism is also proposed for these growth phenomena.

Fluoride-assisted synthesis of mullite (Al5.65 Si0.35 O9.175) nanowires

Novel silicon-deficient mullite (Al_5.65Si_0.35O_9.175) single crystal nanowires were synthesized in large quantities on mica substrates assisted by the intermediate fluoride species. The nanowires have diameters in the range 50–100 nm and typical lengths of several µm. Aligned nanowires were observed at the substrate edge. The nanowires have strong photoluminescence (PL) emission bands at 310, 397, 452 and 468 nm.

Selective oxidation synthesis of MnCr2O4 spinel nanowires from Commercial stainless steel foil

For the first time, MnCr₂O₄ spinel single-crystalline nanowires were simply synthesized by heating commercial stainless steel foil (Cr_0.19Fe_0.70Ni_0.11) under a reducing atmosphere. The nanowires have an average diameter of 50 nm and a length of about 10 μm. Some nanowires are sheathed with a thin layer of amorphous silicon oxide. Photoluminescence measurements revealed that the nanowires exhibit an emission band at 435 nm, which resulted from the oxygen-related defects in the silicon oxide sheath. It was found that the reducing atmosphere plays a key role for the nanowire growth. In the reducing atmosphere, the Mn and Cr elements in the stainless steel could be selectively oxidized because of their higher affinity for oxygen than the Fe and Ni elements. The Fe and Ni elements in the stainless steel, however, acted as the catalyst for the vapor–liquid–solid (VLS) growth of the MnCr₂O₄ nanowires.

Plasma-assisted self-catalytic vapour-liquid-solid growth of β-SiC nanowires

Long and straight β-SiC nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, graphite and silicon dioxide as the precursor. Detailed investigations with x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, Raman scattering spectroscopy, transmission electron microscopy and selected area electron diffraction confirm that the β-SiC nanowires, which are about 100–200 nm in stem diameter and 10–20 µm in length, consist of a solid single-crystalline core along the (1 1 1) direction wrapped with an amorphous SiO_x layer. A broad photoluminescence emission peak with a maximum at about 336 nm is observed at room temperature. A direct current arc plasma-assisted self-catalytic vapour–liquid–solid process is proposed as the growth mechanism of the β-SiC nanowires. This synthesis technique is capable of producing SiC nanowires free of metal contamination with a preferential growth direction and a high aspect ratio, without the designed addition of transition metals as catalysts.

Synthesis and characterization of tin dioxide core-shell structure nanowires

In this study, one-dimensional and quasi-one-dimensional tin dioxide nanowires and nan-owalls were fabricated by the use of the chemical vapor deposition technique. It was demonstrated that the growth and nanostructure of tin oxide can be controlled by varying the thickness of gold layer and the partial pressure of vapor at growing sites. Nanowires with a core-shell structure, i.e., pure tin core and tin oxide shell, were synthesized from C-S_nO₂ powders at a mol ratio of C/S_nO₂=3/5 on both silicon and Lanthanum Strontium Co-balt Ferrite ceramic wafers through the vapor-solid mechanism. The conditions that are favorable to the growth of core-shell structure nanowires are investigated.