Hybrid threshold adaptable quantum secret sharing scheme with reverse Huffman-Fibonacci-tree coding

With prevalent attacks in communication, sharing a secret between communicating parties is an ongoing challenge. Moreover, it is important to integrate quantum solutions with classical secret sharing schemes with low computational cost for the real world use. This paper proposes a novel hybrid threshold adaptable quantum secret sharing scheme, using an m-bonacci orbital angular momentum (OAM) pump, Lagrange interpolation polynomials, and reverse Huffman-Fibonacci-tree coding. To be exact, we employ entangled states prepared by m-bonacci sequences to detect eavesdropping. Meanwhile, we encode m-bonacci sequences in Lagrange interpolation polynomials to generate the shares of a secret with reverse Huffman-Fibonacci-tree coding. The advantages of the proposed scheme is that it can detect eavesdropping without joint quantum operations, and permits secret sharing for an arbitrary but no less than threshold-value number of classical participants with much lower bandwidth. Also, in comparison with existing quantum secret sharing schemes, it still works when there are dynamic changes, such as the unavailability of some quantum channel, the arrival of new participants and the departure of participants. Finally, we provide security analysis of the new hybrid quantum secret sharing scheme and discuss its useful features for modern applications.

Theoretical study of quantum capacitance and associated delay in armchair-edge graphene nanoribbons

This work presents a comprehensive investigation of the quantum capacitance and the associated effects on the carrier transit delay in armchair-edge graphene nanoribbons (A-GNRs) based on semi-analytical method. We emphasize on the realistic analysis of bandgap with taking edge effects into account by means of modified tight binding (TB) model. The results show that the edge effects have significant influence in defining the bandgap which is a necessary input in the accurate analyses of capacitance. The quantum capacitance is discussed in both nondegenerate (low gate voltage) and degenerate (high gate voltage) regimes. We observe that the classical capacitance limits the total gate (external) capacitance in the degenerate regime, whereas, quantum capacitance limits the external gate capacitance in the nondegenerate regime. The influence of gate capacitances on the gate delay is studied extensively to demonstrate the optimization of switching time. Moreover, the high-field behavior of a GNR is studied in the degenerate and nondegenerate regimes. We find that a smaller intrinsic capacitance appears in the channel due to high velocity carrier, which limits the quantum capacitance and thus limit the gate delay. Such detail analysis of GNRs considering a realistic model would be useful for the optimized design of GNR-based nanoelectronic devices.

One-step synthesis of graphene quantum dots from defective CVD graphene and their application in IGZO UV thin film phototransistor

Chemical vapor deposition (CVD) has recently been considered as the most reliable method to prepare high-quality monolayer graphene films, yet the as-grown graphene usually contains wrinkles and cracks or suffers from discontinuity. These defects can easily result in the shredding of large-sized graphene into small pieces even under a gentle disturbance. Herein, this work presents a cost-effective new method to produce high-quality GQDs by vigorous sonication of defective CVD graphene. The prepared GQDs can be easily and stably dispersed in organic solvents. Morphology and optical properties of the GQDs are investigated using a number of techniques. And we observed the as-prepared GQDs are highly homogeneous, mostly consisted of single-layered graphene, roughly round shapes less than 8 nm in a diameter, and exhibited a strong blue luminescence. Impressively, it is also confirmed that the as-obtained GQDs can act as a promising light absorption material for phototransistor with a hybrid film of GQDs and indium gallium zinc oxide (IGZO) as the channel layer. The GQD/IGZO phototransistor exhibited an appreciated photocurrent, which is 10 times larger than that of the IGZO one when exposed to 270 nm light.