Mechanochemical synthesis and characterization of GaN nanocrystals

A solid-state displacement reaction of Ga₂O₃ with Mg₃N₂ has been used to synthesize GaN nanocrystals by mechanochemical processing. X-ray diffraction, transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements indicated that the nanocrystals had a hexagonal structure and sizes ranging from 4 to 20thinspnm. Optical absorption and transmission measurement showed the bandgap of the nanocrystals was consistent with that of bulk GaN samples (3.43thinspeV). This study  demonstrates that mechanochemical processing has significant potential for the synthesis of GaN nanocrystals in a simple and efficient way.

GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization

Semiconducting GaN and Gax In1-x N nanoparticles (4-10 nm in diameter, depending on the metal ratio) with tunable indium content are prepared through a chemical synthesis (the urea-glass route). The bandgap of the ternary system depends on its composition, and therefore, the color of the final material can be turned from bright yellow (the color of pure GaN) to blue (the color of pure InN). Transmission electron microscopy (TEM and HRTEM) and scanning electron microscopy (SEM) images confirm the nanoparticle character and homogeneity of the as-prepared samples. X-ray diffraction (XRD), electron diffraction (EDX), elemental mapping, and UV/Vis, IR, and Raman spectroscopy investigations are used to confirm the incorporation of indium into the crystal structure of GaN. These nanoparticles, possessing adjusted optical properties, are expected to have potential applications in the fabrication of novel optoelectronic devices.

Frontispiece: GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization

Optoelectronic Devices A captivating peculiarity of GaInN alloys is a tunable band gap, depending on the Ga/In ratio, where the pure nitrides are bright yellow (GaN) or dark blue (InN). Gax In1-x N nanoparticles were prepared by a bottom-up approach (the urea glass route). The incorporation of an increasing amount of indium in the GaN structure is indicated by different colors (i.e., different band gaps), and the alloys are further investigated by TEM and optical microscopy. More information can be found in the Full Paper by C. Giordano et al. on page 18976 ff.