5 resultados para Charge-carrier mobility

em Deakin Research Online - Australia


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In this study, a three-stage process consisting of mechanical milling, heat treatment, and washing has been used to manufacture nanoparticulate ZnO powders with a controlled particle size and minimal agglomeration. By varying the temperature of the post-milling heat treatment, it was possible to control the average particle size over the range of 28–57 nm. The photocatalytic activity of these powders was characterized by measuring the hydroxyl radical concentration as a function of irradiation time using the spin-trapping technique with electron paramagnetic resonance spectroscopy. It was found that there exists an optimum particle size of approximately 33 nm for which the photocatalytic activity is maximized. The existence of this optimal particle size is attributable to an increase in the charge carrier recombination rate, which counteracts the increased activity arising from the higher specific surface area for a sufficiently small particle size.

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The molten salts, 1-methyl,3-ethylimidazolium trifluoromethanesulfonate (triflate salt, MeEtImTf) and 1-methyl,3-ethylimidazolium bis(trifluoromethanesulfonimide) (imide salt, MeEtImNTf2) are colourless ionic liquids with conductivities of the order of 10−2 S cm−1 at room temperature. DSC measurements revealed subambient melting and glass transition temperatures. Analysis of the anion and cation diffusion coefficients suggested that the cation was the dominant charge carrier and that the motion was largely independent of the anion. Haven ratios (HRs) of 1 and 1.6 were determined for the imide and triflate salts, respectively, at 30°C (303 K). Values greater than one imply some degree of ionic association, suggesting that aggregation is present in the triflate salt. Mixing of the salts to form binary systems resulted in enhanced conductivities which deviated from a simple law of mixtures. Thermal analysis showed no evidence of a melting point with only a glass transition observed. Corresponding diffusion measurements for the binaries appeared to show a weighted average of the diffusion coefficients of the pure components. The increased conductivity can be attributed to an increase in the number of charge carriers as a result of decreased ion association in the binary.

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High conductivity in solid-state electrolytes is a critical requirement for many advanced energy and other electrochemical applications. Plastic crystalline materials have shown promise in this regard, and the inclusion of nanosized inorganic particles in both amorphous and crystalline materials has indicated order of magnitude enhancements in ion transport induced by space charge or other defect enhancement. In this paper we present conductivity enhancements in the plastic crystal N,N‘-ethylmethylpyrrolidinium bis(trifluoromethanesulfonyl)amide ([C2mpyr][NTf2]) induced by nanosized SiO2 particles. The addition of the nanoparticles dramatically increases plasticity and ion mobility. Positron annihilation lifetime spectroscopy (PALS) measurements indicate an increase in mean defect size and defect concentration as a result of nanoparticle inclusion. The scaling of the conductivity with size suggests that a “trivial space charge” effect is operable, although a strain induced enhancement of defects (in particular extended defects) is also likely given the observed increase in plasticity.

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A new ternary compound with composition Cu5Sn2Te7 has been synthesized using the stoichiometric reaction of Cu, Sn, and Te. The compound crystallizes in C2 space group with unit cell parameters of a = 13.549(2) Å, b = 6.0521(11) Å, c = 9.568(2) Å, and β = 98.121(2)°. Cu5Sn2Te7 is a superstructure of sphalerite and exhibits tetrahedral coordination of Cu, Sn, and Te atoms, containing a unique adamantane-like arrangement. The compound is formally mixed valent with a high electrical conductivity of 9.8 × 10(5) S m(-1) at 300 K and exhibits metallic behavior having p-type charge carriers as indicated from the positive Seebeck coefficient. Hall effect measurements further confirm holes as charge carriers with a carrier density of 1.39 × 10(21) cm(-3) and Hall mobility of 4.5 cm(2) V(-1) s(-1) at 300 K. The electronic band structure calculations indicate the presence of a finite density of states around the Fermi level and agree well with the p-type metallic conductivity. Band structure analysis suggests that the effective mass of the hole state is small and could be responsible for high electronic conductivity and Hall mobility. The high thermal conductivity of 15.1 W m(-1) K(-1) at 300 K coupled with the low Seebeck coefficient results in a poor thermoelectric figure of merit (ZT) for this compound. Theoretical calculations indicate that if Cu5Sn2Te7 is turned into a valence precise compound by substituting one Cu by a Zn, a semiconducting material, Cu4ZnSn2Te7, with a direct band gap of ∼ 0.5 eV can be obtained.