Growth of single-walled carbon nanotubes from well-defined POSS nanoclusters structure

High-quality single-walled carbon nanotubes (SWNTs) with narrow diameter distribution can be generated from well-defined Si8O12 nanoclusters structure which form from thermal decomposition of chemically modified polyhedral oligomeric silsesquioxane (POSS). The nanosized SixOy particles were proved to be responsible for the SWNT growth and believed to be the reason for the narrow diameter distribution of the as-grown SWNTs. This could be extended to other POSS. The SWNTs grown from the nanosized SixOy particles were found to be semiconducting enriched SWNTs (s-SWNTs). A facile patterning technology, direct photolithography, was developed for generating SWNT pattern, which is compatible to industrial-level fabrication of SWNTs pattern for device applications. The metal-free growth together with preferential growth of s-SWNTs and patterning in large scale from the structure-defined silicon oxide nanoclusters not only represent a big step toward the control growth of SWNTs and fabrication of devices for applications particularly in nanoelectronics and biomedicine but also provide a system for further studying and understanding the growth mechanism of SWNTs from nanosized materials and the relationship between the structure of SWNT and nonmetal catalysts.