The reduction of oxygen on iron(II) oxide/poly(3,4-ethylenedioxythiophene) composite thin film electrodes

© 2014 Elsevier Ltd. All rights reserved. Conducting polymers (CPs) are currently being investigated for use in many applications owing to their abilities to catalyze a wide range of electrochemical reactions and act as an effective electrode support for various inorganic and organic electrocatalyst materials. Here, we have found that the deposition of poly(3,4-ethylenedioxythiophene) (PEDOT) through the use of an established base-inhibited chemical vapor-phase polymerization (VPP) procedure using an iron(III) tosylate oxidant results in the co-deposition of electrocatalytic iron(II) oxide species within the film. The presence of these species accounts for the 2-electron reduction of hydrogen peroxide that occurs on these electrodes during the series 4-electron oxygen reduction reaction. Furthermore, this realization leads to the possibility of fabricating thin film inorganic/CP composites of various compositions through careful choice of oxidant in a facile, one-step process. A combination of in situ Raman (487.77 nm laser) and in situ UV-Vis spectroscopy was used to probe the oxidation state of PEDOT in the thin film composite electrodes while reducing oxygen in alkaline conditions. These measurements show that the 2-electron electroreduction of hydrogen peroxide (or HO2 -) occurs only on the iron(II) oxide species in a reaction that is facilitated by an effective electron transfer from the delocalized electron orbitals of the PEDOT matrix. This approach could potentially be used in situ to monitor the electrocatalyst/electrode interface quality of conducting polymer-supported electrocatalysts.

GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization

Semiconducting GaN and Gax In1-x N nanoparticles (4-10 nm in diameter, depending on the metal ratio) with tunable indium content are prepared through a chemical synthesis (the urea-glass route). The bandgap of the ternary system depends on its composition, and therefore, the color of the final material can be turned from bright yellow (the color of pure GaN) to blue (the color of pure InN). Transmission electron microscopy (TEM and HRTEM) and scanning electron microscopy (SEM) images confirm the nanoparticle character and homogeneity of the as-prepared samples. X-ray diffraction (XRD), electron diffraction (EDX), elemental mapping, and UV/Vis, IR, and Raman spectroscopy investigations are used to confirm the incorporation of indium into the crystal structure of GaN. These nanoparticles, possessing adjusted optical properties, are expected to have potential applications in the fabrication of novel optoelectronic devices.