A tungsten complex containing a highly delocalized metal-ligand system

Nucleophilic attack of (triphenylphosphonio) cyclopentadienide on the dichlorodiazomethane-tungsten complex trans[ BrW(dppe)(2)(N2CCl2)]PF6 [dppe is 1,2-bis(diphenylphosphino) ethane] results in C-C bond formation and affords the title compound, trans-[W(C24H18ClN2P)Br(C26H24P2)(2)]PF6 center dot 0.6CH(2)Cl(2). This complex, bis[1,2- bis(diphenylphosphino)ethane] bromido{chloro[3-(triphenylphosphonio) cyclopentadienylidene] diazomethanediido} tungsten hexafluorophosphate dichloromethane 0.6-solvate, contains the previously unknown ligand chloro[3-(triphenylphosphonio) cyclopentadienylidene] diazomethane. Evidence from bond lengths and torsion angles indicates significant through-ligand delocalization of electron density from tungsten to the nominally cationic phosphorus(V) centre. This structural analysis clearly demonstrates that the tungsten-dinitrogen unit is a powerful pi-electron donor with the ability to transfer electron density from the metal to a distant acceptor centre through an extended conjugated ligand system. As a consequence, complexes of this type could have potential applications as nonlinear optical materials and molecular semiconductors.

Physical effects in IR-coating materials

The effects of dispersion, angle of illumination and temperature in coated layers of infrared semiconductors (the IV-VI) and semiinsulators (the II-VI) are described. Examples are given of microcomputer calculations of these.

Monometallic salts derived from complex anions of group 10 metal ions with p-tolylsulfonyldithiocarbimate ligand: Synthesis, characterization and properties

New monometallic complex salts of the form X-2[M(L)(2)] [M = Ni2+, X = (CH3)(2)NH2+(1); M = Ni2+, X = (CH3)(4)N+ (2); M = Ni2+, X = (C2H5)(4)N+(3); M = Ni2+, X = (C3H7)(4)N+(4); M = Ni2+; X = (C6H13)(4)N+) (5); M = Pd2+,X = (CH3)(2)NH2+(6); M = Pd2+, X= (C2H5)(4)N+(7); M = Pd2+, X= (C3H7)(4)N+(8); M = Pd2+, X = (C6H13)(4)N+ (9); M = Pt2+, X = (CH3)(2)NH2+(10); L = p-tolylsulfonyldithiocarbimate (CH3C6H4SO2N=CS22 )] have been prepared and characterized by elemental analysis, IR, H-1 and C-13 NMR and UV-Vis spectroscopy; 1, 3, 4 and 5 by X-ray crystallography. In 1, 3, 4 and 5, the Ni atom is four coordinate with a square planar environment being bonded to four sulfur atoms from two bidentate ligands. All the salts are weakly conducting (sigma(rt) = 10 (7) to 10 (14) Scm (1)) because of the lack of significant S center dot center dot center dot S intermolecular interactions between complex anions [M(L)(2)](2) in the solid state however, they show behavior of semiconductors in the temperature range 353-453 K. All the Pd(II) and Pt(II) salts exhibited phtotolumeniscent emissions near visible region in solution at room temperature.

Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

Ball milling as an effective route for the preparation of doped bornite: synthesis, stability and thermoelectric properties

Bornite, Cu5FeS4, is a naturally-occuring mineral with an ultralow thermal conductivity and potential for thermoelectric power generation. We describe here a new, easy and scalable route to synthesise bornite, together with the thermoelectric behaviour of manganese-substituted derivatives, Cu5Fe1-xMnxS4 (0 ≤ x ≤ 0.10). The electrical and thermal transport properties of Cu5Fe1-xMnxS4 (0 ≤ x ≤ 0.10), which are p-type semiconductors, were measured from room temperature to 573 K. The stability of bornite was investigated by thermogravimetric analysis under inert and oxidising atmospheres. Repeated measurements of the electrical transport properties confirm that bornite is stable up to 580 K under an inert atmosphere, while heating to 890 K results in rapid degradation. Ball milling leads to a substantial improvement in the thermoelectric figure of merit of unsusbtituted bornite (ZT = 0.55 at 543 K), when compared to bornite prepared by conventional high-temperature synthesis (ZT < 0.3 at 543 K). Manganese-substituted samples have a ZT comparable to that of unsubstituted bornite.

Compositional control of the electrical transport properties in the new series of thiospinels Ga1-xGexV4S8-delta (0 <=x<=1)

A new series of non-stoichiometric sulfides Ga1−xGexV4S8−δ (0≤x≤1; δ≤0.23) has been synthesized at high temperatures by heating stoichiometric mixtures of the elements in sealed quartz tubes. The samples have been characterized by powder X-ray diffraction, SQUID magnetometry and electrical transport-property measurements. Structural analysis reveals that a solid solution is formed throughout this composition range, whilst thermogravimetric data reveal sulfur deficiency of up to 2.9% in the quaternary phases. Magnetic measurements suggest that the ferromagnetic behavior of the end-member phase GaV4S8 is retained at x≤0.7; samples in this composition range showing a marked increase in magnetization at low temperatures. By contrast Ga0.25Ge0.75V4S8−δ appears to undergo antiferromagnetic ordering at ca. 15 K. All materials with x≠1 are n-type semiconductors whose resistivity falls by almost six orders of magnitude with decreasing Ga content, whilst the end-member phase GeV4S8−δ is a p-type semiconductor. The results demonstrate that the physical properties are determined principally by the degree of electron filling of narrow-band states arising from intracluster V–V interactions.

Synthesis and characterisation of the anion-ordered tellurides MGeTe (M = Co, Rh)

The synthesis and structural characterisation, carried out using a combination of single-crystal and powder X-ray diffraction, of the materials MGeTe (M = Co, Rh) are described. These phases adopt an ordered α-NiAs2 structure, which can be considered intermediate between those of pyrite and marcasite. Electrical resistivity and Seebeck coefficient measurements, carried out over the temperature range 77 ≤ T/K ≤ 325, indicate that these materials are n-type semiconductors.

Structure and electrical transport properties of the ordered skutterudites MGe1.5S1.5 (M = Co, Rh, Ir)

High-resolution powder neutron diffraction data collected for the skutterudites MGe1.5S1.5 (M=Co, Rh, Ir) reveal that these materials adopt an ordered skutterudite structure (space group R3¯), in which the anions are ordered in layers perpendicular to the [111] direction. In this ordered structure, the anions form two-crystallographically distinct four-membered rings, with stoichiometry Ge2S2, in which the Ge and S atoms are trans to each other. The transport properties of these materials, which are p-type semiconductors, are discussed in the light of the structural results. The effect of iron substitution in CoGe1.5S1.5 has been investigated. While doping of CoGe1.5S1.5 has a marked effect on both the electrical resistivity and the Seebeck coefficient, these ternary skutterudites exhibit significantly higher electrical resistivities than their binary counterparts.