1 resultado para right angle
em Universitat de Girona, Spain
Filtro por publicador
- JISC Information Environment Repository (1)
- Aberystwyth University Repository - Reino Unido (3)
- Andina Digital - Repositorio UASB-Digital - Universidade Andina Simón Bolívar (1)
- Aquatic Commons (6)
- Archimer: Archive de l'Institut francais de recherche pour l'exploitation de la mer (1)
- Archive of European Integration (5)
- Archivo Digital para la Docencia y la Investigación - Repositorio Institucional de la Universidad del País Vasco (2)
- Aston University Research Archive (2)
- Biblioteca Digital da Produção Intelectual da Universidade de São Paulo (2)
- Biblioteca Digital da Produção Intelectual da Universidade de São Paulo (BDPI/USP) (11)
- BORIS: Bern Open Repository and Information System - Berna - Suiça (1)
- Brock University, Canada (13)
- Bucknell University Digital Commons - Pensilvania - USA (1)
- CaltechTHESIS (3)
- Cambridge University Engineering Department Publications Database (47)
- CentAUR: Central Archive University of Reading - UK (96)
- Center for Jewish History Digital Collections (25)
- Chinese Academy of Sciences Institutional Repositories Grid Portal (90)
- Cochin University of Science & Technology (CUSAT), India (8)
- CORA - Cork Open Research Archive - University College Cork - Ireland (4)
- Dalarna University College Electronic Archive (2)
- Deakin Research Online - Australia (117)
- Department of Computer Science E-Repository - King's College London, Strand, London (1)
- DI-fusion - The institutional repository of Université Libre de Bruxelles (2)
- Digital Archives@Colby (1)
- Digital Commons at Florida International University (3)
- Diposit Digital de la UB - Universidade de Barcelona (1)
- Duke University (5)
- eResearch Archive - Queensland Department of Agriculture; Fisheries and Forestry (4)
- Gallica, Bibliotheque Numerique - Bibliothèque nationale de France (French National Library) (BnF), France (16)
- Greenwich Academic Literature Archive - UK (6)
- Helda - Digital Repository of University of Helsinki (7)
- Indian Institute of Science - Bangalore - Índia (103)
- Instituto de Engenharia Nuclear, Brazil - Carpe dIEN (8)
- Instituto Politécnico do Porto, Portugal (3)
- Massachusetts Institute of Technology (1)
- Ministerio de Cultura, Spain (3)
- Plymouth Marine Science Electronic Archive (PlyMSEA) (5)
- Publishing Network for Geoscientific & Environmental Data (2)
- QUB Research Portal - Research Directory and Institutional Repository for Queen's University Belfast (167)
- Queensland University of Technology - ePrints Archive (138)
- ReCiL - Repositório Científico Lusófona - Grupo Lusófona, Portugal (2)
- Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho" (6)
- Research Open Access Repository of the University of East London. (1)
- RUN (Repositório da Universidade Nova de Lisboa) - FCT (Faculdade de Cienecias e Technologia), Universidade Nova de Lisboa (UNL), Portugal (2)
- School of Medicine, Washington University, United States (1)
- Universidad del Rosario, Colombia (6)
- Universidad Politécnica de Madrid (5)
- Universidade Federal do Pará (1)
- Universidade Metodista de São Paulo (1)
- Universitat de Girona, Spain (1)
- Universitätsbibliothek Kassel, Universität Kassel, Germany (7)
- Université de Lausanne, Switzerland (2)
- Université de Montréal, Canada (35)
- University of Michigan (2)
- University of Southampton, United Kingdom (1)
- WestminsterResearch - UK (3)
- Worcester Research and Publications - Worcester Research and Publications - UK (1)
Resumo:
A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si