Technological convergence: a strategic perspective

The information and communication technologies (ICT) sectors are in a process of technological convergence. Determinant factors in this process are the liberalisation of the telecommunications markets and technological change. Many firms are engaged in a process of mergers and alliances to position themselves in this new framework. Technological and demand uncertainties are very important. Our objective in this paper is to study the economic determinants of the strategies of the firms. With this aim, we review some key technological and demand aspects. We shed some light on the strategic motivations of the firms by establishing a parallel with the evolution of the retailing sector

Grain size analyses in tin-lead glazes based on 2d-sections

A problem in the archaeometric classification of Catalan Renaissance pottery is the fact, that the clay supply of the pottery workshops was centrally organized by guilds, and therefore usually all potters of a single production centre produced chemically similar ceramics. However, analysing the glazes of the ware usually a large number of inclusions in the glaze is found, which reveal technological differences between single workshops. These inclusions have been used by the potters in order to opacify the transparent glaze and to achieve a white background for further decoration. In order to distinguish different technological preparation procedures of the single workshops, at a Scanning Electron Microscope the chemical composition of those inclusions as well as their size in the two-dimensional cut is recorded. Based on the latter, a frequency distribution of the apparent diameters is estimated for each sample and type of inclusion. Following an approach by S.D. Wicksell (1925), it is principally possible to transform the distributions of the apparent 2D-diameters back to those of the true three-dimensional bodies. The applicability of this approach and its practical problems are examined using different ways of kernel density estimation and Monte-Carlo tests of the methodology. Finally, it is tested in how far the obtained frequency distributions can be used to classify the pottery

Oxidation of silicon: further tests for the interfacial silicon emission model

The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 Ã). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model’s correctness