1 resultado para Atomic-layer deposition
em Universitat de Girona, Spain
Filtro por publicador
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Relevância:
Resumo:
The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
