Development of directly modulated high speed telecommunication lasers based on surface defined feedback gratings

High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector or distributed feedback lasers, etching is the most critical step. Etching defines the lateral dimmensions of the structure which determines the performance of optoelectronic devices. In this thesis studies and experiments were carried out about the exist- ing etching processes for InP and a novel dry etching process was de- veloped. The newly developed process was based on Cl2/CH4/H2/Ar chemistry and resulted in very smooth surfaces and vertical side walls. With this process the grating definition was significantly improved as compared to other technological developments in the respective field. A surface defined grating definition approach is used in this thesis work which does not require any re-growth steps and makes the whole fabrication process simpler and cost effective. Moreover, this grating fabrication process is fully compatible with nano-imprint lithography and can be used for high throughput low-cost manufacturing. With usual etching techniques reported before it is not possible to etch very deep because of aspect ratio dependent etching phenomenon where with increasing etch depth the etch rate slows down resulting in non-vertical side walls and footing effects. Although with our de- veloped process quite vertical side walls were achieved but footing was still a problem. To overcome the challenges related to grating defini- tion and deep etching, a completely new three step gas chopping dry etching process was developed. This was the very first time that a time multiplexed etching process for an InP based material system was demonstrated. The developed gas chopping process showed extra ordinary results including high mask selectivity of 15, moderate etch- ing rate, very vertical side walls and a record high aspect ratio of 41. Both the developed etching processes are completely compatible with nano imprint lithography and can be used for low-cost high-throughput fabrication. A large number of broad area laser, ridge waveguide laser, distributed feedback laser, distributed bragg reflector laser and coupled cavity in- jection grating lasers were fabricated using the developed one step etch- ing process. Very extensive characterization was done to optimize all the important design and fabrication parameters. The devices devel- oped have shown excellent performance with a very high side mode suppression ratio of more than 52 dB, an output power of 17 mW per facet, high efficiency of 0.15 W/A, stable operation over temperature and injected currents and a threshold current as low as 30 mA for almost 1 mm long device. A record high modulation bandwidth of 15 GHz with electron-photon resonance and open eye diagrams for 10 Gbps data transmission were also shown.

Low-Cost Micromechanically Tunable Optical Devices: Strained Resonator Engineering, Technological Implementation and Characterization

The rapid growth of the optical communication branches and the enormous demand for more bandwidth require novel networks such as dense wavelength division multiplexing (DWDM). These networks enable higher bitrate transmission using the existing optical fibers. Micromechanically tunable optical microcavity devices like VCSELs, Fabry-Pérot filters and photodetectors are core components of these novel DWDM systems. Several air-gap based tunable devices were successfully implemented in the last years. Even though these concepts are very promising, two main disadvantages are still remaining. On the one hand, the high fabrication and integration cost and on the other hand the undesired adverse buckling of the suspended membranes. This thesis addresses these two problems and consists of two main parts: • PECVD dielectric material investigation and stress control resulting in membranes shape engineering. • Implementation and characterization of novel tunable optical devices with tailored shapes of the suspended membranes. For this purposes, low-cost PECVD technology is investigated and developed in detail. The macro- and microstress of silicon nitride and silicon dioxide are controlled over a wide range. Furthermore, the effect of stress on the optical and mechanical properties of the suspended membranes and on the microcavities is evaluated. Various membrane shapes (concave, convex and planar) with several radii of curvature are fabricated. Using this resonator shape engineering, microcavity devices such as non tunable and tunable Fabry-Pérot filters, VCSELs and PIN photodetectors are succesfully implemented. The fabricated Fabry-Pérot filters cover a spectral range of over 200nm and show resonance linewidths down to 1.5nm. By varying the stress distribution across the vertical direction within a DBR, the shape and the radius of curvature of the top membrane are explicitely tailored. By adjusting the incoming light beam waist to the curvature, the fundamental resonant mode is supported and the higher order ones are suppressed. For instance, a tunable VCSEL with 26 nm tuning range, 400µW maximal output power, 47nm free spectral range and over 57dB side mode suppresion ratio (SMSR) is demonstrated. Other technologies, such as introducing light emitting organic materials in microcavities are also investigated.

Large-Size AlGaN/GaN HEMT Large-Signal Electrothermal Characterization and Modeling for Wireless Digital Communications

The rapid growth in high data rate communication systems has introduced new high spectral efficient modulation techniques and standards such as LTE-A (long term evolution-advanced) for 4G (4th generation) systems. These techniques have provided a broader bandwidth but introduced high peak-to-average power ratio (PAR) problem at the high power amplifier (HPA) level of the communication system base transceiver station (BTS). To avoid spectral spreading due to high PAR, stringent requirement on linearity is needed which brings the HPA to operate at large back-off power at the expense of power efficiency. Consequently, high power devices are fundamental in HPAs for high linearity and efficiency. Recent development in wide bandgap power devices, in particular AlGaN/GaN HEMT, has offered higher power level with superior linearity-efficiency trade-off in microwaves communication. For cost-effective HPA design to production cycle, rigorous computer aided design (CAD) AlGaN/GaN HEMT models are essential to reflect real response with increasing power level and channel temperature. Therefore, large-size AlGaN/GaN HEMT large-signal electrothermal modeling procedure is proposed. The HEMT structure analysis, characterization, data processing, model extraction and model implementation phases have been covered in this thesis including trapping and self-heating dispersion accounting for nonlinear drain current collapse. The small-signal model is extracted using the 22-element modeling procedure developed in our department. The intrinsic large-signal model is deeply investigated in conjunction with linearity prediction. The accuracy of the nonlinear drain current has been enhanced through several issues such as trapping and self-heating characterization. Also, the HEMT structure thermal profile has been investigated and corresponding thermal resistance has been extracted through thermal simulation and chuck-controlled temperature pulsed I(V) and static DC measurements. Higher-order equivalent thermal model is extracted and implemented in the HEMT large-signal model to accurately estimate instantaneous channel temperature. Moreover, trapping and self-heating transients has been characterized through transient measurements. The obtained time constants are represented by equivalent sub-circuits and integrated in the nonlinear drain current implementation to account for complex communication signals dynamic prediction. The obtained verification of this table-based large-size large-signal electrothermal model implementation has illustrated high accuracy in terms of output power, gain, efficiency and nonlinearity prediction with respect to standard large-signal test signals.

Interferometrische Sensoren mit Modulation der optischen Weglänge für die Fertigungsmesstechnik

Ziel dieser Dissertation ist es, eine Klasse interferometrischer Messgeräte zu charakterisieren und weiter zu entwickeln. Die Modulation der optischen Weglänge (OPLM) im Referenzarm eines interferometrischen Messsystems ist ein anpassungsfähiger Ansatz. Sie ist zur Messung von Oberflächenprofilen mit einer Auflösung bis in den sub-nm-Bereich bei einem Messbereich von bis zu 100 Mikrometer geeignet. Wird ein statisches Messobjekt gemessen, tritt durch die Modulation im Referenzarm am Detektor ein periodisches Interferenzmuster auf. Dies ist in der unten stehenden Abbildung schematisch dargestellt. Bei einer Veränderung des Abstandes zwischen Objekt und Messgerät kann aus der Phasen- und/oder Hüllkurvenverschiebung im Interferenzmuster die Abstandsänderung abgeleitet werden.Im Rahmen der Arbeit sind zwei funktionsfähige OPLM-Messsysteme entwickelt, aufgebaut und getestet worden. Diese demonstrieren, dass der OPLM-Ansatz ein breites Spektrum an Anwendungen durch eine optische Messung abdecken kann. Allerdings zeigen sich an den Messsystemen auch die Limitierungen des OPLM-Ansatzes. Die Systeme basieren auf einer Punktmessung mittels einer fasergekoppelten Sonde sowie auf einer linienförmigen Messung durch eine Zeilenkamera. Um eine hohe laterale Auflösung zu erzielen, wird die Zeilenkamera mit einem Mikroskop kombiniert. Damit flächenhaft gemessen werden kann, ist es notwendig, Messobjekt und Sensor zueinander zu verschieben. Daher wird eine Theorie entwickelt, unter welchen Randbedingungen bewegte Objekte von einem OPLM-Messsystem aufgelöst werden können. Die Theorie wird anschließend experimentell überprüft und bestätigt. Für die Auswertung der bei der Modulation der optischen Weglänge entstehenden Interferenzen existieren bereits einige erprobte Algorithmen, welche auf ihre Eignung hin untersucht und mit selbst entwickelten Algorithmen verglichen werden. Auch wird darauf eingegangen, welches die zentralen Herausforderungen bei der Planung von OPLM-Interferometern sind und wie sich insbesondere die Wahl des Aktors für die OPLM auf das gesamte Messsystem auswirkt. Bei den beiden Messsystemen werden jeweils wichtige Komponenten wie analoge Elektronik und Aktorik sowie ihre Funktionsweise erläutert. Es wird detailliert beschrieben, wie ein OPLM-Messsystem charakterisiert und kalibriert werden muss, um möglichst zuverlässige Messwerte zu liefern. Abschließend werden die Möglichkeiten der beiden entwickelten Systeme durch Beispielmessungen demonstriert, sowie ihre Messgenauigkeit charakterisiert.