Zur Adsorption und Reaktion von Stickstoffmonoxid an Aktivkohle

Die Verwendung von Aktivkohlen und -koksen stellt eine Alternative zu herkömmlichen Prozessen zur Verminderung der NOx-Emissionen in Rauchgasen dar. An diesen Materialien wird Stickstoffmonoxid adsorbiert und katalytisch zu N2 reduziert. Eine einheitliche Erklärung über die ablaufenden Vorgänge und die Reaktionsmechanismen gibt es noch nicht. Die Ergebnisse der bisher veröffentlichten wissenschaftlichen Arbeiten sind sehr unterschiedlich, wenn nicht sogar widersprüchlich. In dieser Arbeit wird, anhand der Messung von NO-Durchbruchskurven und thermischen Desorptionsspektren, die Adsorption und Reaktion von Stickstoffmonoxid an Aktivkohlen und -koksen in Anwesenheit von Sauerstoff und Wasserdampf untersucht. Zur Durchführung der experimentellen Untersuchungen wird eine Versuchsanlage, bestehend aus einer Vorrichtung zur Gasgemischaufbereitung, einem Festbettreaktor und einer Gasanalytik, konzipiert und aufgebaut. Die Untersuchungen erfolgen bei Temperaturen zwischen 100 und 150 °C. Die NO-, O2- und H2O-Konzentrationen werden anhand der Rauchgaszusammensetzung kohlegefeuerter Kraftwerke gewählt. Die experimentellen Untersuchungen konzentrieren sich auf die Verwendung einer Aktivkohle aus Ölpalmschalen, die in einem Drehrohrreaktor am Institut für Thermische Energietechnik der Universität Kassel hergestellt wurde. Die experimentellen Ergebnisse zeigen, dass während des Prozesses NO-Adsorption, -Reduktion und -Oxidation, NO2-Bildung, -Adsorption und -reduktive Desorption, H2O-Adsorption sowie O2-Vergasung gleichzeitig stattfinden. Bei niedrigen Temperaturen werden die NO2-Bildung und die Adsorption bevorzugt. Die NO-Reduktion läuft über adsorbiertes NO mit CO2- und CO-Bildung. Durch O2-Vergasung werden aktive freie Cf-Plätzen für die NO-Reaktion und -Adsorption gebildet. Wasserdampf wird an der Aktivkohle adsorbiert und belegt aktive Plätze für diese Prozesse. Aus den experimentellen Ergebnissen werden kinetische und Gleichgewichtsparameter der NO-Sorption bestimmt. Ein vereinfachtes mathematisches Modell des Festbettreaktors, das zur Berechnung der NO-Durchbruchskurven bei unterschiedlichen Temperaturen dient, wird aufgestellt.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

First results of experimental and theoretical investigations on sextet states of doubly-excited five-electron ions

In continuation of our previous work on doubly-excited ions with three and four electrons we present the first results on optical transitions in the term system of doubly-excited ions with five electrons. Transitions between such sextet states were identified in beam-foil spectra of the ions nitrogen, oxygen and fluorine. Assignments were first established by comparison with Multi-Configuration Dirac-Fock calculations. Later assignments were aided by Multi-Configuration Hartree-Fock calculations (see the contribution by G. Miecznik et al. in this issue). Decay curves were recorded for all six candidate lines. The lifetime results are compared to theoretical values which confirm most of the assignments qualitatively.

Theoretical and experimental study of intracavity laser absorption spectroscopy

In this thesis, a dual mode tunable gas sensor based on intracavity laser absorption spectroscopy (ICLAS) principle is investigated, both, numerically and experimentally. In order to minimize the cost and size of the gas sensor, relative intensity noise (RIN) is implemented as a detection parameter. Investigation is performed to determine the effect of injection current, operating temperature, mode spacing, and cavity length on RIN. It has been found that it is best to operate the gas sensor at smaller mode spacing and near the threshold current or at larger mode spacing and far above the threshold current for the use of RIN as the readout parameter.