Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

Soil, water and nutrient loss under conventional and organic vegetable production managed in small farms

Agricultural systems with conventional tillage and intensive use of agrochemicals, especially those on high slopes and with shallow soils, have the potential to release pollutants. This study aimed at evaluating the soil, water and nutrient lost via agricultural runoff in large plots (small catchments) under conventional and organic farming of vegetables as well as under forest (control) system in a Cambisol in the Campestre catchment. Samples of runoff were collected biweekly for one year through a Coshocton wheel. The soil and water losses from the conventional farming were 218 and 6 times higher, respectively, than forest. Under organic farming the soil and water losses were 12 and 4 times higher, respectively, than forest. However the soil losses (0.5 to 114 kg ha^(−1) year^(−1)) are considered low in agronomy but environmentally represent a potential source of surface water contamination by runoff associated pollutants. The concentrations and losses of all forms of phosphorus (P) were higher in the conventional system (9.5, 0.9 and 0.3 mg L^(−1) of total P for conventional, organic and forest systems, respectively), while the organic system had the highest concentrations and losses of soluble nitrogen (4.7, 38.6 and 0.4 mg L^(−1) of NO_3-N, respectively). The percentage of bioavailable P was proportionally higher in the organic system (91% of total P lost was as bioavailable P), indicating greater potential for pollution in the short term.