Physik der Elektronen in Nanostrukturen und niedrigdimensionalen Systemen - Studie zweier Beispiele

Als Beispiele für die vielfältigen Phänomene der Physik der Elektronen in niedrigdimensionalen Systemen wurden in dieser Arbeit das Cu(110)(2x1)O-Adsorbatsystem und die violette Li0.9Mo6O17-Bronze untersucht. Das Adsorbatsystem bildet selbstorganisierte quasi-eindimensionale Nanostrukturen auf einer Kupferoberfläche. Die Li-Bronze ist ein Material, das aufgrund seiner Kristallstruktur quasi-eindimensionale elektronische Eigenschaften im Volumen aufweist. Auf der Cu(110)(2x1)O-Oberfläche kann durch Variation der Sauerstoffbedeckung die Größe der streifenartigen CuO-Domänen geändert werden und damit der Übergang von zwei Dimensionen auf eine Dimension untersucht werden. Der Einfluss der Dimensionalität wurde anhand eines unbesetzten elektronischen Oberflächenzustandes studiert. Dessen Energieposition (untere Bandkante) verschiebt mit zunehmender Einschränkung (schmalere CuO-Streifen) zu größeren Energien hin. Dies ist ein bekannter quantenmechanischer Effekt und relativ gut verstanden. Zusätzlich wurde die Lebensdauer des Zustandes auf der voll bedeckten Oberfläche (zwei Dimensionen) ermittelt und deren Veränderung mit der Breite der CuO-Streifen untersucht. Es zeigt sich, dass die Lebensdauer auf schmaleren CuO-Streifen drastisch abnimmt. Dieses Ergebnis ist neu. Es kann im Rahmen eines Fabry-Perot-Modells als Streuung in Zustände außerhalb der CuO-Streifen verstanden werden. Außer den gerade beschriebenen Effekten war es möglich die Ladungsdichte des diskutierten Zustandes orts- und energieabhängig auf den CuO-Streifen zu studieren. Die Li0.9Mo6O17-Bronze wurde im Hinblick auf das Verhalten der elektronischen Zustandsdichte an der Fermikante untersucht. Diese Fragestellung ist besonders wegen der Quasieindimensionalität des Materials interessant. Die Messungen von STS-Spektren in der Nähe der Fermienergie zeigen, dass die Elektronen in der Li0.9Mo6O17-Bronze eine sogenannte Luttingerflüssigkeit ausbilden, die anstatt einer Fermiflüssigkeit in eindimensionalen elektronischen Systemen erwartet wird. Bisher wurde Luttingerflüssigkeitsverhalten erst bei wenigen Materialien und Systemen experimentell nachgewiesen, obschon die theoretischen Voraussagen mehr als 30 Jahre zurückliegen. Ein Charakteristikum einer Luttingerflüssigkeit ist die Abnahme der Zustandsdichte an der Fermienergie mit einem Potenzgesetz. Dieses Verhalten wurde in STS-Spektren dieser Arbeit beobachtet und quantitativ im Rahmen eines Luttingerflüssigkeitsmodells beschrieben. Auch die Temperaturabhängigkeit des Phänomens im Bereich von 5K bis 55K ist konsistent mit der Beschreibung durch eine Luttingerflüssigkeit. Generell zeigen die Untersuchungen dieser Arbeit, dass die Dimensionalität, insbesondere deren Einschränkung, einen deutlichen Einfluss auf die elektronischen Eigenschaften von Systemen und Materialien haben kann.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Impact of sward type, cutting date and conditioning temperature on mass and energy flows in the integrated generation of solid fuel and biogas from semi-natural grassland

Energy production from biomass and the conservation of ecologically valuable grassland habitats are two important issues of agriculture today. The combination of a bioenergy production, which minimises environmental impacts and competition with food production for land with a conversion of semi-natural grasslands through new utilization alternatives for the biomass, led to the development of the IFBB process. Its basic principle is the separation of biomass into a liquid fraction (press fluid, PF) for the production of electric and thermal energy after anaerobic digestion to biogas and a solid fraction (press cake, PC) for the production of thermal energy through combustion. This study was undertaken to explore mass and energy flows as well as quality aspects of energy carriers within the IFBB process and determine their dependency on biomass-related and technical parameters. Two experiments were conducted, in which biomass from semi-natural grassland was conserved as silage and subjected to a hydrothermal conditioning and a subsequent mechanical dehydration with a screw press. Methane yield of the PF and the untreated silage was determined in anaerobic digestion experiments in batch fermenters at 37°C with a fermentation time of 13-15 and 27-35 days for the PF and the silage, respectively. Concentrations of dry matter (DM), ash, crude protein (CP), crude fibre (CF), ether extract (EE), neutral detergent fibre (NDF), acid detergent fibre (ADF), acid detergent ligning (ADL) and elements (K, Mg, Ca, Cl, N, S, P, C, H, N) were determined in the untreated biomass and the PC. Higher heating value (HHV) and ash softening temperature (AST) were calculated based on elemental concentration. Chemical composition of the PF and mass flows of all plant compounds into the PF were calculated. In the first experiment, biomass from five different semi-natural grassland swards (Arrhenaterion I and II, Caricion fuscae, Filipendulion ulmariae, Polygono-Trisetion) was harvested at one late sampling (19 July or 31 August) and ensiled. Each silage was subjected to three different temperature treatments (5°C, 60°C, 80°C) during hydrothermal conditioning. Based on observed methane yields and HHV as energy output parameters as well as literature-based and observed energy input parameters, energy and green house gas (GHG) balances were calculated for IFBB and two reference conversion processes, whole-crop digestion of untreated silage (WCD) and combustion of hay (CH). In the second experiment, biomass from one single semi-natural grassland sward (Arrhenaterion) was harvested at eight consecutive dates (27/04, 02/05, 09/05, 16/05, 24/05, 31/05, 11/06, 21/06) and ensiled. Each silage was subjected to six different treatments (no hydrothermal conditioning and hydrothermal conditioning at 10°C, 30°C, 50°C, 70°C, 90°C). Energy balance was calculated for IFBB and WCD. Multiple regression models were developed to predict mass flows, concentrations of elements in the PC, concentration of organic compounds in the PF and energy conversion efficiency of the IFBB process from temperature of hydrothermal conditioning as well as NDF and DM concentration in the silage. Results showed a relative reduction of ash and all elements detrimental for combustion in the PC compared to the untreated biomass of 20-90%. Reduction was highest for K and Cl and lowest for N. HHV of PC and untreated biomass were in a comparable range (17.8-19.5 MJ kg-1 DM), but AST of PC was higher (1156-1254°C). Methane yields of PF were higher compared to those of WCD when the biomass was harvested late (end of May and later) and in a comparable range when the biomass was harvested early and ranged from 332 to 458 LN kg-1 VS. Regarding energy and GHG balances, IFBB, with a net energy yield of 11.9-14.1 MWh ha-1, a conversion efficiency of 0.43-0.51, and GHG mitigation of 3.6-4.4 t CO2eq ha-1, performed better than WCD, but worse than CH. WCD produces thermal and electric energy with low efficiency, CH produces only thermal energy with a low quality solid fuel with high efficiency, IFBB produces thermal and electric energy with a solid fuel of high quality with medium efficiency. Regression models were able to predict target parameters with high accuracy (R2=0.70-0.99). The influence of increasing temperature of hydrothermal conditioning was an increase of mass flows, a decrease of element concentrations in the PC and a differing effect on energy conversion efficiency. The influence of increasing NDF concentration of the silage was a differing effect on mass flows, a decrease of element concentrations in the PC and an increase of energy conversion efficiency. The influence of increasing DM concentration of the silage was a decrease of mass flows, an increase of element concentrations in the PC and an increase of energy conversion efficiency. Based on the models an optimised IFBB process would be obtained with a medium temperature of hydrothermal conditioning (50°C), high NDF concentrations in the silage and medium DM concentrations of the silage.