Interannual and interdecadal oscillations in hydrological variables: Sources and modeling of the persistence in the Elbe River Basin

Wenn man die Existenz von physikalischen Mechanismen ignoriert, die für die Struktur hydrologischer Zeitreihen verantwortlich sind, kann das zu falschen Schlussfolgerungen bzgl. des Vorhandenseins möglicher Gedächtnis (memory) -Effekte, d.h. von Persistenz, führen. Die hier vorgelegte Doktorarbeit spürt der niedrigfrequenten klimatischen Variabilität innerhalb den hydrologischen Zyklus nach und bietet auf dieser "Reise" neue Einsichten in die Transformation der charakteristischen Eigenschaften von Zeitreihen mit einem Langzeitgedächtnis. Diese Studie vereint statistische Methoden der Zeitreihenanalyse mit empirisch-basierten Modelltechniken, um operative Modelle zu entwickeln, die in der Lage sind (1) die Dynamik des Abflusses zu modellieren, (2) sein zukünftiges Verhalten zu prognostizieren und (3) die Abflusszeitreihen an unbeobachteten Stellen abzuschätzen. Als solches präsentiert die hier vorgelegte Dissertation eine ausführliche Untersuchung zu den Ursachen der niedrigfrequenten Variabilität von hydrologischen Zeitreihen im deutschen Teil des Elbe-Einzugsgebietes, den Folgen dieser Variabilität und den physikalisch basierten Reaktionen von Oberflächen- und Grundwassermodellen auf die niedrigfrequenten Niederschlags-Eingangsganglinien. Die Doktorarbeit gliedert sich wie folgt: In Kapitel 1 wird als Hintergrundinformation das Hurst Phänomen beschrieben und ein kurzer Rückblick auf diesbezügliche Studien gegeben. Das Kapitel 2 diskutiert den Einfluss der Präsenz von niedrigfrequenten periodischen Zeitreihen auf die Zuverlässigkeit verschiedener Hurst-Parameter-Schätztechniken. Kapitel 3 korreliert die niedrigfrequente Niederschlagsvariabilität mit dem Index der Nord-Atlantischen Ozillations (NAO). Kapitel 4-6 sind auf den deutschen Teil des Elbe-Einzugsgebietes fokussiert. So werden in Kapitel 4 die niedrigfrequenten Variabilitäten der unterschiedlichen hydro-meteorologischen Parameter untersucht und es werden Modelle beschrieben, die die Dynamik dieser Niedrigfrequenzen und deren zukünftiges Verhalten simulieren. Kapitel 5 diskutiert die mögliche Anwendung der Ergebnisse für die charakteristische Skalen und die Verfahren der Analyse der zeitlichen Variabilität auf praktische Fragestellungen im Wasserbau sowie auf die zeitliche Bestimmung des Gebiets-Abflusses an unbeobachteten Stellen. Kapitel 6 verfolgt die Spur der Niedrigfrequenzzyklen im Niederschlag durch die einzelnen Komponenten des hydrologischen Zyklus, nämlich dem Direktabfluss, dem Basisabfluss, der Grundwasserströmung und dem Gebiets-Abfluss durch empirische Modellierung. Die Schlussfolgerungen werden im Kapitel 7 präsentiert. In einem Anhang werden technische Einzelheiten zu den verwendeten statistischen Methoden und die entwickelten Software-Tools beschrieben.

Use of digital camera to assess nitrogen status of winter wheat in the Northern China Plain

The most widely used methods to assess the nitrogen (N) status of winter wheat (Triticum aestivum L.) are the determination of plant total N by combustion, the testing of nitrate in the leaf tissue and the use of SPAD readings. However, due to their labor requirements or high costs these methods can hardly be applied to the huge wheat growing areas of the Northern China Plain. This study therefore examined an alternative method to measure the N status of wheat by using a digital camera to record the visible green light reflected from the plant canopy. The experiment was conducted near Beijing in a multi-factorial field trial with three levels of N. The intensity of green light reflected from the wheat canopy was compared to the total N concentration, to the nitrate concentration of the basal stem, and to the SPAD readings of leaves. The results show significant inverse relationships between greenness intensity, canopy total N, and SPAD readings at booting and flowering. At booting, sap nitrate <2000mgL^-1 was inversely related to greenness intensity and to sap nitrate concentration in the basal stem. At sap nitrate ~2000mgL^-1, the greenness intensity reached a plateau. At booting and flowering, significant inverse relationships between greenness intensity and shoot biomass were found. The results show the potential of the new method to assess the N status of winter wheat.

Theoretical study of the structural dependence of nuclear quadrupole frequencies in high-T_c superconductors

The remarkable difference between the nuclear quadrupole frequencies v_Q of Cu(1) and Cu(2) in YBa_2Cu_3O_6 and YBa_2Cu_3O_7 is analyzed. We calculate the ionic contribution to the electric field gradients and estimate, by using experimental results for Cu_2O and La_2CuO_4, the contribution of the d valence electrons. Thus, we determine v_Q1, v_Q2, and the asymmetry parameter η for YBa_2Cu_3O_6 and YBa_2Cu_3O_7. The number of holes in dthe Cu-O planes and chains is found to be important for the different behavior of v_Q1 and v_Q2.

Ab initio Molecular Dynamics Simulations of the Structural Response of Solids to Ultrashort Laser and XUV Pulses

The theoretical model and underlying physics described in this thesis are about the interaction of femtosecond-laser and XUV pulses with solids. The key to understand the basics of such interaction is to study the structural response of the materials after laser interaction. Depending on the laser characteristics, laser-solid interaction can result in a wide range of structural responses such as solid-solid phase transitions, vacuum phonon squeezing, ultrafast melting, generation of coherent phonons, etc. During my research work, I have modeled the systems irradiated by low-, medium- and high-laser intensities, and studied different types of structural dynamics of solids at various laser fluences.

Atomistic-continuum modeling of ultrafast laser-induced melting of silicon targets

In this work, we present an atomistic-continuum model for simulations of ultrafast laser-induced melting processes in semiconductors on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with MD method on the atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast heat conduction, and photo-excited free carrier diffusion are accounted for with a continuum TTM-like model (called nTTM). First, we independently consider the applications of nTTM and MD for the description of silicon, and then construct the combined MD-nTTM model. Its development and thorough testing is followed by a comprehensive computational study of fast nonequilibrium processes induced in silicon by an ultrashort laser irradiation. The new model allowed to investigate the effect of laser-induced pressure and temperature of the lattice on the melting kinetics. Two competing melting mechanisms, heterogeneous and homogeneous, were identified in our big-scale simulations. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the large negative volume of melting of silicon, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. A series of simulations for a range of absorbed fluences allowed us to find the threshold fluence value at which homogeneous liquid nucleation starts contributing to the classical heterogeneous propagation of the solid-liquid interface. A series of simulations for a range of the material thicknesses showed that the sample width we chosen in our simulations (800 nm) corresponds to a thick sample. Additionally, in order to support the main conclusions, the results were verified for a different interatomic potential. Possible improvements of the model to account for nonthermal effects are discussed and certain restrictions on the suitable interatomic potentials are found. As a first step towards the inclusion of these effects into MD-nTTM, we performed nanometer-scale MD simulations with a new interatomic potential, designed to reproduce ab initio calculations at the laser-induced electronic temperature of 18946 K. The simulations demonstrated that, similarly to thermal melting, nonthermal phase transition occurs through nucleation. A series of simulations showed that higher (lower) initial pressure reinforces (hinders) the creation and the growth of nonthermal liquid nuclei. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a face-centered cubic crystal structure. The results of this study, therefore, have important implications for interpretation of experimental data on the kinetics of melting process of semiconductors.