Low-Cost Micromechanically Tunable Optical Devices: Strained Resonator Engineering, Technological Implementation and Characterization

The rapid growth of the optical communication branches and the enormous demand for more bandwidth require novel networks such as dense wavelength division multiplexing (DWDM). These networks enable higher bitrate transmission using the existing optical fibers. Micromechanically tunable optical microcavity devices like VCSELs, Fabry-Pérot filters and photodetectors are core components of these novel DWDM systems. Several air-gap based tunable devices were successfully implemented in the last years. Even though these concepts are very promising, two main disadvantages are still remaining. On the one hand, the high fabrication and integration cost and on the other hand the undesired adverse buckling of the suspended membranes. This thesis addresses these two problems and consists of two main parts: • PECVD dielectric material investigation and stress control resulting in membranes shape engineering. • Implementation and characterization of novel tunable optical devices with tailored shapes of the suspended membranes. For this purposes, low-cost PECVD technology is investigated and developed in detail. The macro- and microstress of silicon nitride and silicon dioxide are controlled over a wide range. Furthermore, the effect of stress on the optical and mechanical properties of the suspended membranes and on the microcavities is evaluated. Various membrane shapes (concave, convex and planar) with several radii of curvature are fabricated. Using this resonator shape engineering, microcavity devices such as non tunable and tunable Fabry-Pérot filters, VCSELs and PIN photodetectors are succesfully implemented. The fabricated Fabry-Pérot filters cover a spectral range of over 200nm and show resonance linewidths down to 1.5nm. By varying the stress distribution across the vertical direction within a DBR, the shape and the radius of curvature of the top membrane are explicitely tailored. By adjusting the incoming light beam waist to the curvature, the fundamental resonant mode is supported and the higher order ones are suppressed. For instance, a tunable VCSEL with 26 nm tuning range, 400µW maximal output power, 47nm free spectral range and over 57dB side mode suppresion ratio (SMSR) is demonstrated. Other technologies, such as introducing light emitting organic materials in microcavities are also investigated.

Polarisation von Licht im Physikunterricht : ein Elementarisierungsansatz zur Einführung in quantenphysikalische Begriffe und Prinzipien

In der vorliegenden Arbeit wird ein Unterrichtskonzept für die gymnasiale Oberstufe beschrieben, das anhand der Polarisationseigenschaft des Lichts von der Beobachtung ausgehend einen Zugang zur Quantenphysik ermöglicht. Die Unterrichtsinhalte bauen so aufeinander auf, dass ein "harter Bruch" zwischen der klassischen und der quantenphysikalischen Beschreibung von Licht vermieden wird. Das methodische Vorgehen des Unterrichtskonzeptes führt vom Phänomen ausgehend zu quantitativen Experimenten hin zu einer Einführung in quantenphysikalische Begriffe und Prinzipien. Dabei bildet der elektrische Feldvektor die Verknüpfung zwischen der klassischen und der quantenphysi-kalischen Beschreibung der Polarisationsexperimente, in dem er zunächst die Polarisationsexperimente beschreibt und im weiteren Verlauf des Unterrichtsganges als Wahrscheinlichkeitsamplitude gedeutet wird. Die Polarisation von Licht wird zu Beginn des Unterrichtsganges im Rahmen eines fächerübergreifenden Kontextes eingeführt, wobei die Navigation der Insekten nach dem polarisierten Himmelslicht als Einstieg dient. Die Erzeugung und die Eigen-schaften von polarisiertem Licht werden anhand von einfachen qualitativen Schüler- und Demonstrationsexperimenten mit Polarisationsfolien erarbeitet. Das Polarisationsphänomen der Haidinger-Büschel, das bei der Beobachtung von polarisiertem Licht wahrgenommen werden kann, ermöglicht eine Anbindung an das eigene Erleben der Schülerinnen und Schüler. Zur Erklärung dieser Experimente auf der Modellebene wird der elektrische Feldvektor und dessen Komponentenzerlegung benutzt. Im weiteren Verlauf des Unterrichtsganges wird die Komponentenzerlegung des elektrischen Feldvektors für eine quantitative Beschreibung der Polarisationsexperimente wieder aufgegriffen. In Experimenten mit Polarisationsfiltern wird durch Intensitätsmessungen das Malussche Gesetz und der quadratische Zusammenhang zwischen Intensität und elektrischem Feldvektor erarbeitet. Als Abschluss der klassischen Polarisationsexperimente wird das Verhalten von polarisiertem Licht bei Überlagerung in einem Michelson-Interferometer untersucht. Das in Abhängigkeit der Polarisationsrichtungen entstehende Interferenzmuster wird wiederum mit Hilfe der Komponentenzerlegung des elektrischen Feldvektors beschrieben und führt zum Superpositionsprinzip der elektrischen Feldvektoren. Beim Übergang zur Quantenphysik werden die bereits durchgeführten Polarisationsexperimente als Gedankenexperimente in der Photonenvorstellung gedeutet. Zur Beschreibung der Polarisation von Photonen wird der Begriff des Zustandes eingeführt, der durch die Wechselwirkung der Photonen mit dem Polarisationsfilter erzeugt wird. Das Malussche Gesetz wird in der Teilchenvorstellung wieder aufgegriffen und führt mit Hilfe der statistischen Deutung zum Begriff der Wahrscheinlichkeit. Bei der Beschreibung von Interferenzexperimenten mit einzelnen Photonen wird die Notwendigkeit eines Analogons zum elektrischen Feldvektor deutlich. Diese Betrachtungen führen zum Begriff der Wahrscheinlichkeitsamplitude und zum Superpositionsprinzip der Wahrscheinlichkeitsamplituden. Zum Abschluss des Unterrichtsganges wird anhand des Lokalisationsproblems einzelner Photonen das Fundamentalprinzip der Quantenphysik erarbeitet.

Theory for the Photoacoustic Response to X-Ray Absorption

A microscopic theory is presented for the photoacoustic effect induced in solids by x-ray absorption. The photoacoustic effect results from the thermalization of the excited Auger electrons and photoelectrons. We explain the dependence of the photoacoustic signal S on photon energy and the proportionality to the x-ray absorption coefficient in agreement with recent experiments on Cu. Results are presented for the dependence of S on photon energy, sample thickness, and the electronic structure of the absorbing solid.

Theory for Optical Absorption in Small Clusters: Dependence on Atomic Structure and Cluster Size

We present a theory which permits for the first time a detailed analysis of the dependence of the absorption spectrum on atomic structure and cluster size. Thus, we determine the development of the collective excitations in small clusters and show that their broadening depends sensitively on the tomic structure, in particular at the surface. Results for Hg_n^+ clusters show that the plasmon energy is close to its jellium value in the case of spherical-like structures, but is in general between w_p/ \wurzel{3} and w_p/ \wurzel{2} for compact clusters. A particular success of our theory is the identification of the excitations contributing to the absorption peaks.

Highly Sensitive Sensor Based On Intracavity Laser Absorption Spectroscopy By Means of Relative Intensity Noise

This thesis concerns with the main aspects of medical trace molecules detection by means of intracavity laser absorption spectroscopy (ICLAS), namely with the equirements for highly sensitive, highly selective, low price, and compact size sensor. A novel two modes semiconductor laser sensor is demonstrated. Its operation principle is based on the competition between these two modes. The sensor sensitivity is improved when the sample is placed inside the two modes laser cavity, and the competition between the two modes exists. The effects of the mode competition in ICLAS are discussed theoretically and experimentally. The sensor selectivity is enhanced using external cavity diode laser (ECDL) configuration, where the tuning range only depends on the external cavity configuration. In order to considerably reduce the sensor cost, relative intensity noise (RIN) is chosen for monitoring the intensity ratio of the two modes. RIN is found to be an excellent indicator for the two modes intensity ratio variations which strongly supports the sensor methodology. On the other hand, it has been found that, wavelength tuning has no effect on the RIN spectrum which is very beneficial for the proposed detection principle. In order to use the sensor for medical applications, the absorption line of an anesthetic sample, propofol, is measured. Propofol has been dissolved in various solvents. RIN has been chosen to monitor the sensor response. From the measured spectra, the sensor sensitivity enhancement factor is found to be of the order of 10^(3) times of the conventional laser spectroscopy.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

1.55 µm High-Speed QDs Lasers for Optical Telecommunication Applications

In this work investigation of the QDs formation and the fabrication of QD based semiconductor lasers for telecom applications are presented. InAs QDs grown on AlGaInAs lattice matched to InP substrates are used to fabricate lasers operating at 1.55 µm, which is the central wavelength for far distance data transmission. This wavelength is used due to its minimum attenuation in standard glass fibers. The incorporation of QDs in this material system is more complicated in comparison to InAs QDs in the GaAs system. Due to smaller lattice mismatch the formation of circular QDs, elongated QDs and quantum wires is possible. The influence of the different growth conditions, such as the growth temperature, beam equivalent pressure, amount of deposited material on the formation of the QDs is investigated. It was already demonstrated that the formation process of QDs can be changed by the arsenic species. The formation of more round shaped QDs was observed during the growth of QDs with As2, while for As4 dash-like QDs. In this work only As2 was used for the QD growth. Different growth parameters were investigated to optimize the optical properties, like photoluminescence linewidth, and to implement those QD ensembles into laser structures as active medium. By the implementation of those QDs into laser structures a full width at half maximum (FWHM) of 30 meV was achieved. Another part of the research includes the investigation of the influence of the layer design of lasers on its lasing properties. QD lasers were demonstrated with a modal gain of more than 10 cm-1 per QD layer. Another achievement is the large signal modulation with a maximum data rate of 15 Gbit/s. The implementation of optimized QDs in the laser structure allows to increase the modal gain up to 12 cm-1 per QD layer. A reduction of the waveguide layer thickness leads to a shorter transport time of the carriers into the active region and as a result a data rate up to 22 Gbit/s was achieved, which is so far the highest digital modulation rate obtained with any 1.55 µm QD laser. The implementation of etch stop layers into the laser structure provide the possibility to fabricate feedback gratings with well defined geometries for the realization of DFB lasers. These DFB lasers were fabricated by using a combination of dry and wet etching. Single mode operation at 1.55 µm with a high side mode suppression ratio of 50 dB was achieved.

Theoretical and experimental study of intracavity laser absorption spectroscopy

In this thesis, a dual mode tunable gas sensor based on intracavity laser absorption spectroscopy (ICLAS) principle is investigated, both, numerically and experimentally. In order to minimize the cost and size of the gas sensor, relative intensity noise (RIN) is implemented as a detection parameter. Investigation is performed to determine the effect of injection current, operating temperature, mode spacing, and cavity length on RIN. It has been found that it is best to operate the gas sensor at smaller mode spacing and near the threshold current or at larger mode spacing and far above the threshold current for the use of RIN as the readout parameter.

Interferometrische Sensoren mit Modulation der optischen Weglänge für die Fertigungsmesstechnik

Ziel dieser Dissertation ist es, eine Klasse interferometrischer Messgeräte zu charakterisieren und weiter zu entwickeln. Die Modulation der optischen Weglänge (OPLM) im Referenzarm eines interferometrischen Messsystems ist ein anpassungsfähiger Ansatz. Sie ist zur Messung von Oberflächenprofilen mit einer Auflösung bis in den sub-nm-Bereich bei einem Messbereich von bis zu 100 Mikrometer geeignet. Wird ein statisches Messobjekt gemessen, tritt durch die Modulation im Referenzarm am Detektor ein periodisches Interferenzmuster auf. Dies ist in der unten stehenden Abbildung schematisch dargestellt. Bei einer Veränderung des Abstandes zwischen Objekt und Messgerät kann aus der Phasen- und/oder Hüllkurvenverschiebung im Interferenzmuster die Abstandsänderung abgeleitet werden.Im Rahmen der Arbeit sind zwei funktionsfähige OPLM-Messsysteme entwickelt, aufgebaut und getestet worden. Diese demonstrieren, dass der OPLM-Ansatz ein breites Spektrum an Anwendungen durch eine optische Messung abdecken kann. Allerdings zeigen sich an den Messsystemen auch die Limitierungen des OPLM-Ansatzes. Die Systeme basieren auf einer Punktmessung mittels einer fasergekoppelten Sonde sowie auf einer linienförmigen Messung durch eine Zeilenkamera. Um eine hohe laterale Auflösung zu erzielen, wird die Zeilenkamera mit einem Mikroskop kombiniert. Damit flächenhaft gemessen werden kann, ist es notwendig, Messobjekt und Sensor zueinander zu verschieben. Daher wird eine Theorie entwickelt, unter welchen Randbedingungen bewegte Objekte von einem OPLM-Messsystem aufgelöst werden können. Die Theorie wird anschließend experimentell überprüft und bestätigt. Für die Auswertung der bei der Modulation der optischen Weglänge entstehenden Interferenzen existieren bereits einige erprobte Algorithmen, welche auf ihre Eignung hin untersucht und mit selbst entwickelten Algorithmen verglichen werden. Auch wird darauf eingegangen, welches die zentralen Herausforderungen bei der Planung von OPLM-Interferometern sind und wie sich insbesondere die Wahl des Aktors für die OPLM auf das gesamte Messsystem auswirkt. Bei den beiden Messsystemen werden jeweils wichtige Komponenten wie analoge Elektronik und Aktorik sowie ihre Funktionsweise erläutert. Es wird detailliert beschrieben, wie ein OPLM-Messsystem charakterisiert und kalibriert werden muss, um möglichst zuverlässige Messwerte zu liefern. Abschließend werden die Möglichkeiten der beiden entwickelten Systeme durch Beispielmessungen demonstriert, sowie ihre Messgenauigkeit charakterisiert.