Spatio-temporal resolution studies on a highly compact ultrafast electron diffractometer

Time-resolved diffraction with femtosecond electron pulses has become a promising technique to directly provide insights into photo induced primary dynamics at the atomic level in molecules and solids. Ultrashort pulse duration as well as extensive spatial coherence are desired, however, space charge effects complicate the bunching of multiple electrons in a single pulse.Weexperimentally investigate the interplay between spatial and temporal aspects of resolution limits in ultrafast electron diffraction (UED) on our highly compact transmission electron diffractometer. To that end, the initial source size and charge density of electron bunches are systematically manipulated and the resulting bunch properties at the sample position are fully characterized in terms of lateral coherence, temporal width and diffracted intensity.Weobtain a so far not reported measured overall temporal resolution of 130 fs (full width at half maximum) corresponding to 60 fs (root mean square) and transversal coherence lengths up to 20 nm. Instrumental impacts on the effective signal yield in diffraction and electron pulse brightness are discussed as well. The performance of our compactUEDsetup at selected electron pulse conditions is finally demonstrated in a time-resolved study of lattice heating in multilayer graphene after optical excitation.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Photoionization of Kr 4s: III. Detailed and extended measurements of the Kr 4s-electron ionization cross section

Absolute Kr 4s-electron photoionization cross sections as a function of the exciting-photon energy were measured by photon-induced fluorescence spectroscopy (PIFS) at improved primary-energy resolution. The cross sections were determined from threshold to 33.5 eV and to 90 eV with primary-photon bandwidths of 25 meV and 50 meV, respectively. The measurements were compared with experimental data and selected theoretical calculations for the direct Kr 4s-electron photoionization cross sections.

A Comparative Study on Internationalization and the Role of International Offices at Selected Middle Eastern and German Universities

Internationalization of higher education has become one of the most important policies for institutions of higher education worldwide. Though universities are international by nature, the need for intensified quality activities of international nature has promoted internationalization to be under spotlight of researchers, administrators and policy makers and to be an area for research. Each institution follows its certain way to govern its international affairs. Most Universities, especially in the 'Developed World' started to plan it strategically. This study explores the meanings and importance of internationalization especially that it means different things to different people. It also studies the rationales behind internationalizing higher education. It focuses on the four main prevailing rationales; political, cultural/social, economic/financial, and academic on both national and institutional levels. With the increasing need to strategically plan, the study explores internationalization strategies in terms of how to develop them, what are their approaches and types, and their components and dimensions. Damascus University has witnessed an overwhelming development of its international relations and activities. Therefore, it started to face a problem of how to deal with this increasing load especially that its International Office is the only unit that deals with the international issues. In order to study the internationalization phenomenon at Damascus University, the 2WH approach, which asks the what, why, and how questions, is used and in order to define the International Office's role in the internationalization process of the University, it studies it and the international offices of Kassel University, and Humboldt University in Germany, The University of Jordan, and Al Baath University in Syria using the 'SOCIAL' approach that studies and analyses the situation, organization, challenges, involvement, ambitions, and limitations of these offices. The internationalization process at the above-mentioned Universities is studied and compared in terms of its meaning, rationales for both the institution and its academic staff, challenges and strategic planning. Then a comparison is made among the international offices of the Universities to identify their approaches, what led to their success and what led to their failure in their practices. The aim is to provide Damascus University and its International Office with some good practices and, depending on the experiences of the professionals of the case-studies, a suggested guidance to the work of this Office and the University in general is given. The study uses the interviews with the different officials and stakeholders of the case-studies as the main method of collecting the information in addition to site visits, studying their official documents and their websites. The study belongs to qualitative research that has an action dimension in it since the recommendations will be applied in the International Office. The study concludes with few learned lessons for Damascus University and its International Office depending on the comparison that was done according to a set of dimensions. Finally a reflection on the relationship between internationalization of higher education and politics, the impact of politics on Middle Eastern Universities, and institutional internationalization strategies are presented.