Studies on arbuscular mycorrhiza (AM) in the Alentejo (Portugal) using pea mutants resistant to AM fungi as a control tool for field conditions

The utilization and management of arbuscular mycorrhiza (AM) symbiosis may improve production and sustainability of the cropping system. For this purpose, native AM fungi (AMF) were sought and tested for their efficiency to increase plant growth by enhanced P uptake and by alleviation of drought stress. Pot experiments with safflower (Carthamus tinctorius) and pea (Pisum sativum) in five soils (mostly sandy loamy Luvisols) and field experiments with peas were carried out during three years at four different sites. Host plants were grown in heated soils inoculated with AMF or the respective heat sterilized inoculum. In the case of peas, mutants resistant to AMF colonization were used as non-mycorrhizal controls. The mycorrhizal impact on yields and its components, transpiration, and P and N uptake was studied in several experiments, partly under varying P and N levels and water supply. Screening of native AMF by most probable number bioassays was not very meaningful. Soil monoliths were placed in the open to simulate field conditions. Inoculation with a native AMF mix improved grain yield, shoot and leaf growth variables as compared to control. Exposed to drought, higher soil water depletion of mycorrhizal plants resulted in a haying-off effect. The growth response to this inoculum could not be significantly reproduced in a subsequent open air pot experiment at two levels of irrigation and P fertilization, however, safflower grew better at higher P and water supply by multiples. The water use efficiency concerning biomass was improved by the AMF inoculum in the two experiments. Transpiration rates were not significantly affected by AM but as a tendency were higher in non-mycorrhizal safflower. A fundamental methodological problem in mycorrhiza field research is providing an appropriate (negative) control for the experimental factor arbuscular mycorrhiza. Soil sterilization or fungicide treatment have undesirable side effects in field and greenhouse settings. Furthermore, artificial rooting, temperature and light conditions in pot experiments may interfere with the interpretation of mycorrhiza effects. Therefore, the myc- pea mutant P2 was tested as a non-mycorrhizal control in a bioassay to evaluate AMF under field conditions in comparison to the symbiotic isogenetic wild type of var. FRISSON as a new integrative approach. However, mutant P2 is also of nod- phenotype and therefore unable to fix N2. A 3-factorial experiment was carried out in a climate chamber at high NPK fertilization to examine the two isolines under non-symbiotic and symbiotic conditions. P2 achieved the same (or higher) biomass as wild type both under good and poor water supply. However, inoculation with the AMF Glomus manihot did not improve plant growth. Differences of grain and straw yields in field trials were large (up to 80 per cent) between those isogenetic pea lines mainly due to higher P uptake under P and water limited conditions. The lacking N2 fixation in mutants was compensated for by high mineral N supply as indicated by the high N status of the pea mutant plants. This finding was corroborated by the results of a major field experiment at three sites with two levels of N fertilization. The higher N rate did not affect grain or straw yields of the non-fixing mutants. Very efficient AMF were detected in a Ferric Luvisol on pasture land as revealed by yield levels of the evaluation crop and by functional vital staining of highly colonized roots. Generally, levels of grain yield were low, at between 40 and 980 kg ha-1. An additional pot trial was carried out to elucidate the strong mycorrhizal effect in the Ferric Luvisol. A triplication of the plant equivalent field P fertilization was necessary to compensate for the mycorrhizal benefit which was with five times higher grain yield very similar to that found in the field experiment. However, the yield differences between the two isolines were not always plausible as the evaluation variable because they were also found in (small) field test trials with apparently sufficient P and N supply and in a soil of almost no AMF potential. This similarly occurred for pea lines of var. SPARKLE and its non-fixing mycorrhizal (E135) and non-symbiotic (R25) isomutants, which were tested in order to exclude experimentally undesirable benefits by N2 fixation. In contrast to var. FRISSON, SPARKLE was not a suitable variety for Mediterranean field conditions. This raises suspicion putative genetic defects other than symbiotic ones may be effective under field conditions, which would conflict with the concept of an appropriate control. It was concluded that AMF resistant plants may help to overcome fundamental problems of present research on arbuscular mycorrhiza, but may create new ones.

Spacelike maximal surfaces in 3D Lorentz-Minkowski space

We investigate spacelike maximal surfaces in 3-dimensional Lorentz-Minkowski space, give an Enneper-Weierstrass representation of such surfaces and classify those with a Lorentzian or Euclidian rotation symmetry.

Construction of fractal interpolation surfaces on rectangular grids

We present a general method of generating continuous fractal interpolation surfaces by iterated function systems on an arbitrary data set over rectangular grids and estimate their Box-counting dimension.

Construction of recurrent fractal interpolation surfaces(RFISs) on rectangular grids

A recurrent iterated function system (RIFS) is a genaralization of an IFS and provides nonself-affine fractal sets which are closer to natural objects. In general, it's attractor is not a continuous surface in R3. A recurrent fractal interpolation surface (RFIS) is an attractor of RIFS which is a graph of bivariate continuous interpolation function. We introduce a general method of generating recurrent interpolation surface which are at- tractors of RIFSs about any data set on a grid.

Dipodal Ferrocene Derivatives for Nanostructured Redox-Functionalised Surfaces

Self-assembled monolayers (SAMs) on solid surfaces are of great current interest in science and nanotechnology. This thesis describes the preparation of several symmetrically 1,1’-substituted ferrocene derivatives that contain anchoring groups suitable for chemisorption on gold and may give rise to SAMs with electrochemically switchable properties. The binding groups are isocyano (-NC), isothiocyanato (-NCS), phosphanyl (-PPh2), thioether (-SR) and thienyl. In the context of SAM fabrication, isothiocyanates and phosphanes are adsorbate systems which, surprisingly, have remained essentially unexplored. SAMs on gold have been fabricated with the adsorbates from solution and investigated primarily by X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure spectroscopy. The results of these analytical investigations are presented and discussed in matters of the film quality and possible binding modes. The quality of self-assembled monolayers fabricated from 1,1’-diisocyanoferrocene and 1,1’-diisothiocyanatoferrocene turned out to be superior to that of films based on the other adsorbate species investigated. Films of those absorbates as well as of dppf afforded well-defined SAMs of good quality. All other films of this study based on sulfur containing anchoring groups exhibit chemical inhomogeneity and low orientational order of the film constituents and therefore failed to give rise to well-defined SAMs. Surface coordination chemistry is naturally related to molecular coordination chemistry. Since all SAMs described in this thesis were prepared on gold (111) surfaces, the ferrocene-based ligands of this study have been investigated in their ability for complexation towards gold(I). The sulfur-based ferrocene ligands [fc(SR)2] failed to give stable gold(I) complexes. In contrast, 1,1’-diisocyanoferrocene (1) proved to be an excellent ligand for the complexation of gold(I). Several complexes were prepared and characterised utilising a series of gold(I) acetylides. These complexes show interesting structural motifs in the solid state, since intramolecular aurophilic interactions lead to a parallel orientation of the isocyano moieties, combined with an antiparallel alignment of neighbouring units. The reaction of 1 with the gold(I) acetylide [Au(C≡C–Fc)]n turned out to be very unusual, since the two chemically equivalent isocyano groups undergo a different reaction. One group shows an ordinary coordination and the other one undergoes an extraordinary 1,1-insertion into the Au-C bond. As a sideline of the research of this thesis several ferrocene derivatives have been tested for their suitability for potential surface reactions. Copper(I) mediated 1,3-dipolar cycloadditions of azidoferrocene derivatives with terminal alkynes appeared very promising in this context, but failed to a certain extent in terms of ‘click’ chemistry, since the formation of the triazoles depended on the strict exclusion of oxygen and moisture and yields were only moderate. Staudinger reactions between dppf and azidoferrocene derivatives were also tested. The nucleophilic additions of secondary amines to 1,1’-diisothiocyanatoferrocene led to the respective thiourea derivatives in quantitative yields.

Modification and Analysis of Group-13-Nitride Semiconductor Surfaces: Influence of Adsorbates on Device Characteristics and Processing

Im Rahmen dieser interdisziplinären Doktorarbeit wird eine (Al)GaN Halbleiteroberflächenmodifikation untersucht, mit dem Ziel eine verbesserte Grenzfläche zwischen dem Material und dem Dielektrikum zu erzeugen. Aufgrund von Oberflächenzuständen zeigen GaN basierte HEMT Strukturen üblicherweise große Einsatzspannungsverschiebungen. Bisher wurden zur Grenzflächenmodifikation besonders die Entfernung von Verunreinigungen wie Sauerstoff oder Kohlenstoff analysiert. Die nasschemischen Oberflächenbehandlungen werden vor der Abscheidung des Dielektrikums durchgeführt, wobei die Kontaminationen jedoch nicht vollständig entfernt werden können. In dieser Arbeit werden Modifikationen der Oberfläche in wässrigen Lösungen, in Gasen sowie in Plasma analysiert. Detaillierte Untersuchungen zeigen, dass die inerte (0001) c-Ebene der Oberfläche kaum reagiert, sondern hauptsächlich die weniger polaren r- und m- Ebenen. Dies kann deutlich beim Defektätzen sowie bei der thermischen Oxidation beobachtet werden. Einen weiteren Ansatz zur Oberflächenmodifikation stellen Plasmabehandlungen dar. Hierbei wird die Oberflächenterminierung durch eine nukleophile Substitution mit Lewis Basen, wie Fluorid, Chlorid oder Oxid verändert, wodurch sich die Elektronegativitätsdifferenz zwischen dem Metall und dem Anion im Vergleich zur Metall-Stickstoff Bindung erhöht. Dies führt gleichzeitig zu einer Erhöhung der Potentialdifferenz des Schottky Kontakts. Sauerstoff oder Fluor besitzen die nötige thermische Stabilität um während einer Silicium-nitridabscheidung an der (Al)GaN Oberfläche zu bleiben. Sauerstoffvariationen an der Oberfläche werden in NH3 bei 700°C, welches die nötigen Bedingungen für die Abscheidung darstellen, immer zu etwa 6-8% reduziert – solche Grenzflächen zeigen deswegen auch keine veränderten Ergebnisse in Einsatzspannungsuntersuchungen. Im Gegensatz dazu zeigt die fluorierte Oberfläche ein völlig neues elektrisches Verhalten: ein neuer dominanter Oberflächendonator mit einem schnellen Trapping und Detrapping Verhalten wird gefunden. Das Energieniveau dieses neuen, stabilen Donators liegt um ca. 0,5 eV tiefer in der Bandlücke als die ursprünglichen Energieniveaus der Oberflächenzustände. Physikalisch-chemische Oberflächen- und Grenzflächenuntersuchung mit XPS, AES oder SIMS erlauben keine eindeutige Schlussfolgerung, ob das Fluor nach der Si3N4 Abscheidung tatsächlich noch an der Grenzfläche vorhanden ist, oder einfach eine stabilere Oberflächenrekonstruktion induziert wurde, bei welcher es selbst nicht beteiligt ist. In beiden Fällen ist der neue Donator in einer Konzentration von 4x1013 at/cm-2 vorhanden. Diese Dichte entspricht einer Oberflächenkonzentration von etwa 1%, was genau an der Nachweisgrenze der spektroskopischen Methoden liegt. Jedoch werden die elektrischen Oberflächeneigenschaften durch die Oberflächenmodifikation deutlich verändert und ermöglichen eine potentiell weiter optimierbare Grenzfläche.