Synthesis and characterisation of novel nitrogen and fluorine containing spirobifluorene derivatives for electronic applications and crystal engineering

Among organic materials, spirobifluorene derivatives represent a very attractive class of materials for electronic devices. These compounds have high melting points, glass transitions temperatures and morphological stability, which makes these materials suitable for organic electronic applications. In addition, some of spirobifluorenes can form porous supramolecular associations with significant volumes available for the inclusion of guests. These molecular associations based on the spirobifluorenes are noteworthy because they are purely molecular analogues of zeolites and other microporous solids, with potential applications in separation, catalysis, sensing and other areas.

Ferrocene-Based Pyridylphosphine Ligands – Coordination Chemistry of Group 10, 11 and 12 Metals

English: The present thesis describes the synthesis of 1,1’-ferrocendiyl-based pyridylphosphine ligands, the exploration of their fundamental coordination chemistry and preliminary experiments with selected complexes aimed at potential applications. One main aspect is the synthesis of the bidentate ferrocene-based pyridylphosphine ligands 1-(Pyrid-2-yl)-1’-diphenylphosphinoferrocene, 1-(Pyrid-3-yl)-1’-diphenylphosphinoferrocene and 1-[(Pyrid-2-yl)methyl]-1’-diphenylphosphinoferrocene. A specific feature of these ligands is the ball-bearing like flexibility of the ferrocenebased backbone. An additional flexibility element is the rotation around the C–C single bonds. Consequently, the donor atoms can realise a wide range of positions with respect to each other and are therefore able to adapt to the coordination requirements of different metal centres. The flexibility of the ligand also plays a role in another key aspect of this work, which concerns the coordination mode, i. e. bridging vs. chelating. In addition to the flexibility, also the position of the donor atoms to each other is important. This is largely affected by the position of the pyridyl nitrogen (pyrid-2-yl vs. pyrid-3-yl) and the methylen group in 1-[(Pyrid-2-yl)methyl]-1’-diphenylphosphinoferrocene. Another interesting point is the combination of a soft phosphorus donor atom with a harder nitrogen donor atom, according to the HSAB principle. This combination generates a unique binding profile, since the pi-acceptor character of the P site is able to stabilise a metal centre in a low oxidation state, while the nitrogen sigma-donor ability can make the metal more susceptible to oxidative addition reactions. A P,N-donor combination can afford hemilabile binding profiles, which would be ideal for catalysis. Beyond 1,2-substituted ferrocene derivatives, which are quite successful in catalytic applications, 1,1’-derivatives are rather underrepresented. While a low-yield synthetic pathway to 1-(Pyrid-2-yl)-1’-diphenylphosphinoferrocene was already described in the literature [I. R. Butler, Organometallics 1992, 11, 74.], it was possible to find a new, improved and simplified synthetic pathway. Both other ligands were unknown prior to this work. Satisfactory results in the synthesis of 1-(Pyrid-3-yl)-1’-diphenylphosphinoferrocene could be achieved by working in analogy to the new synthetic procedure for 1-(Pyrid-2-yl)-1’-diphenylphosphinoferrocene. The synthesis of 1-[(Pyrid-2-yl)methyl]-1’-diphenylphosphinoferrocene has been handled by the group of Prof. Petr Stepnicka from Charles University, Prague, Czech Republic. The synthesis of tridentate ligands with an analogous heterodentate arrangement, was investigated briefly as a sideline of this study. The major part of this thesis deals with the fundamental coordination chemistry towards transition metals of the groups 10, 11 and 12. Due to the well-established catalytic properties of analogous palladium complexes, the coordination chemistry towards palladium (group 10) is of particular interest. The metals zinc and cadmium (group 12) are also of substantial importance because they are redox-inert in their divalent state. This is relevant in view of electrochemical investigations concerning the utilisation of the ligands as molecular redox sensors. Also mercury and the monovalent metals silver and gold (group 11) are included because of their rich coordination chemistry. It is essential to answer questions concerning aspects of the ligands’ coordination mode bearing in mind the HSAB principle.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Fabrication and Characterization of Efficient Optical Filter Arrays Implemented by 3D Nanoimprint

In dieser Arbeit werden optische Filterarrays für hochqualitative spektroskopische Anwendungen im sichtbaren (VIS) Wellenlängenbereich untersucht. Die optischen Filter, bestehend aus Fabry-Pérot (FP)-Filtern für hochauflösende miniaturisierte optische Nanospektrometer, basieren auf zwei hochreflektierenden dielektrischen Spiegeln und einer zwischenliegenden Resonanzkavität aus Polymer. Jeder Filter erlaubt einem schmalbandigem spektralen Band (in dieser Arbeit Filterlinie genannt) ,abhängig von der Höhe der Resonanzkavität, zu passieren. Die Effizienz eines solchen optischen Filters hängt von der präzisen Herstellung der hochselektiven multispektralen Filterfelder von FP-Filtern mittels kostengünstigen und hochdurchsatz Methoden ab. Die Herstellung der multiplen Spektralfilter über den gesamten sichtbaren Bereich wird durch einen einzelnen Prägeschritt durch die 3D Nanoimprint-Technologie mit sehr hoher vertikaler Auflösung auf einem Substrat erreicht. Der Schlüssel für diese Prozessintegration ist die Herstellung von 3D Nanoimprint-Stempeln mit den gewünschten Feldern von Filterkavitäten. Die spektrale Sensitivität von diesen effizienten optischen Filtern hängt von der Genauigkeit der vertikalen variierenden Kavitäten ab, die durch eine großflächige ‚weiche„ Nanoimprint-Technologie, UV oberflächenkonforme Imprint Lithographie (UV-SCIL), ab. Die Hauptprobleme von UV-basierten SCIL-Prozessen, wie eine nichtuniforme Restschichtdicke und Schrumpfung des Polymers ergeben Grenzen in der potenziellen Anwendung dieser Technologie. Es ist sehr wichtig, dass die Restschichtdicke gering und uniform ist, damit die kritischen Dimensionen des funktionellen 3D Musters während des Plasmaätzens zur Entfernung der Restschichtdicke kontrolliert werden kann. Im Fall des Nanospektrometers variieren die Kavitäten zwischen den benachbarten FP-Filtern vertikal sodass sich das Volumen von jedem einzelnen Filter verändert , was zu einer Höhenänderung der Restschichtdicke unter jedem Filter führt. Das volumetrische Schrumpfen, das durch den Polymerisationsprozess hervorgerufen wird, beeinträchtigt die Größe und Dimension der gestempelten Polymerkavitäten. Das Verhalten des großflächigen UV-SCIL Prozesses wird durch die Verwendung von einem Design mit ausgeglichenen Volumen verbessert und die Prozessbedingungen werden optimiert. Das Stempeldesign mit ausgeglichen Volumen verteilt 64 vertikal variierenden Filterkavitäten in Einheiten von 4 Kavitäten, die ein gemeinsames Durchschnittsvolumen haben. Durch die Benutzung der ausgeglichenen Volumen werden einheitliche Restschichtdicken (110 nm) über alle Filterhöhen erhalten. Die quantitative Analyse der Polymerschrumpfung wird in iii lateraler und vertikaler Richtung der FP-Filter untersucht. Das Schrumpfen in vertikaler Richtung hat den größten Einfluss auf die spektrale Antwort der Filter und wird durch die Änderung der Belichtungszeit von 12% auf 4% reduziert. FP Filter die mittels des Volumengemittelten Stempels und des optimierten Imprintprozesses hergestellt wurden, zeigen eine hohe Qualität der spektralen Antwort mit linearer Abhängigkeit zwischen den Kavitätshöhen und der spektralen Position der zugehörigen Filterlinien.