Profile simulations of gas chopping etching processes : model development and comparison with experiments

The progress in microsystem technology or nano technology places extended requirements to the fabrication processes. The trend is moving towards structuring within the nanometer scale on the one hand, and towards fabrication of structures with high aspect ratio (ratio of vertical vs. lateral dimensions) and large depths in the 100 µm scale on the other hand. Current procedures for the microstructuring of silicon are wet chemical etching and dry or plasma etching. A modern plasma etching technique for the structuring of silicon is the so-called "gas chopping" etching technique (also called "time-multiplexed etching"). In this etching technique, passivation cycles, which prevent lateral underetching of sidewalls, and etching cycles, which etch preferably in the vertical direction because of the sidewall passivation, are constantly alternated during the complete etching process. To do this, a CHF3/CH4 plasma, which generates CF monomeres is employed during the passivation cycle, and a SF6/Ar, which generates fluorine radicals and ions plasma is employed during the etching cycle. Depending on the requirements on the etched profile, the durations of the individual passivation and etching cycles are in the range of a few seconds up to several minutes. The profiles achieved with this etching process crucially depend on the flow of reactants, i.e. CF monomeres during the passivation cycle, and ions and fluorine radicals during the etching cycle, to the bottom of the profile, especially for profiles with high aspect ratio. With regard to the predictability of the etching processes, knowledge of the fundamental effects taking place during a gas chopping etching process, and their impact onto the resulting profile is required. For this purpose in the context of this work, a model for the description of the profile evolution of such etching processes is proposed, which considers the reactions (etching or deposition) at the sample surface on a phenomenological basis. Furthermore, the reactant transport inside the etching trench is modelled, based on angular distribution functions and on absorption probabilities at the sidewalls and bottom of the trench. A comparison of the simulated profiles with corresponding experimental profiles reveals that the proposed model reproduces the experimental profiles, if the angular distribution functions and absorption probabilities employed in the model is in agreement with data found in the literature. Therefor the model developed in the context of this work is an adequate description of the effects taking place during a gas chopping plasma etching process.

Double photoionization of argon into the {3s3p^5} {^1P}- and {^3P}-states

Double photoionization of argon was studied by photon induced fluorescence spectroscopy (PIFS). Cross sections for the double photoionization into the {3s3p^5} {^1P}, {^3P} states of Ar^{+ +} are presented for exciting photon energies between threshold and 120 eV. In the threshold range the energy dependencies of these cross sections were determined for the first time. Singlet and triplet states are populated with comparable probabilities at equal excess energies, in contrast to predictions of the extended Wannier theory. At hv = 100eV the spin-or-bit splitting of the 3s3p^5 ^3P state was resolved, and a cross section for the production of Ar^{+ +} {3s^0}{3p^6 } {^1S_0} was determined for the first time.

Absolute Kr 4s-electron photoionization cross sections between 30 and 90 eV measured by photon-induced fluorescence spectroscopy (PIFS)

Absolute Kr 4s-electron photoionization cross sections as a function of the exciting-photon energy between 30 and 90 eV were measured by photon-induced fluorescence spectroscopy (PIFS). The measurements were compared with available experimental data and theoretical calculations.

Photoionization of Kr near 4s threshold: II. Intermediate-coupling theory

The Kr 4s-electron photoionization cross section as a function of the exciting-photon energy in the range between 30 eV and 90 eV was calculated using the configuration interaction (CI) technique in intermediate coupling. In the calculations the 4p spin-orbital interaction and corrections due to higher orders of perturbation theory (the so-called Coulomb interaction correlational decrease) were considered. Energies of Kr II states were calculated and agree with spectroscopic data within less than 10 meV. For some of the Kr II states new assignments were suggested on the basis of the largest component among the calculated CI wavefunctions.

Photoionization of Kr 4s: III. Detailed and extended measurements of the Kr 4s-electron ionization cross section

Absolute Kr 4s-electron photoionization cross sections as a function of the exciting-photon energy were measured by photon-induced fluorescence spectroscopy (PIFS) at improved primary-energy resolution. The cross sections were determined from threshold to 33.5 eV and to 90 eV with primary-photon bandwidths of 25 meV and 50 meV, respectively. The measurements were compared with experimental data and selected theoretical calculations for the direct Kr 4s-electron photoionization cross sections.

Photoionization of Kr near the 4s threshold: IV. Photoionization through the autoionization of doubly-excited states

The photoionization cross sections for the production of the Kr II 4s state and Kr II satellite states were studied in the 4s ionization threshold region. The interference of direct photoionization and ionization through the autoionization decay of doubly-excited states was considered. In the calculations of doubly-excited state energies, performed by a configuration interaction technique, the 4p spin-orbit interaction and the (Kr II core)-(excited electron) Coulomb interaction were included. The theoretical cross sections are in many cases in good agreement with the measured values. Strong resonant features in the satellite spectra with threshold energies greater than 30 eV are predicted.

Threshold scan of the Ne 2s-electron photoionization cross edition

The photoionization of the Ne 2s-electrons was studied from threshold to 1 eV above threshold. The technique of photon-induced fluorescence spectroscopy was applied. Pronounced structures were observed resulting from autoionization of doubly excited atomic states. A threshold cross section of 0.17 Mb was determined.

Photoionization of Kr near the 4s threshold: I. Experiment and LS coupling theory

Absolute cross sections for the transitions of the Kr atom into the 4s^1 and 4p^4nl states of the Kr^+ ion were measured in the 4s-electron threshold region by photon-induced fluorescence spectroscopy (PIFS). The cross sections for the transitions of the Kr atom into the 4s^1 and 4p^4nl states were also calculated, as well as the 4p^4nln'l' doubly excited states, in the frame of LS-coupling many-body technique. The cross sections of the doubly-excited atomic states were used to illustrate the pronounced contributions of the latter to the photoionization process, evident from the measurements. The comparison of theory and experiment led to conclusions about the origin of the main features observed in the experiment.

State-selective study of the direct double photoionization of the Ne valence shell

Cross sections for double photoionization of the Ne L shell into the 2s2p{^5 3}P^0} and ^1P^0 and the 2s^02p^6 ^1S^e states were measured for energies from threshold up to 150 eV, using photon induced fluorescence spectroscopy. Both 2s2p^5 channels were observed with comparable magnitude in contradiction to a propensity rule based on the Wannier-Peterkop-Rau theory. A comparison of the summed ^3P^0 and ^1P^0 cross sections with MBPT calculations results in a deviation of 50%.

Femtosecond time-resolved wave packet motion in molecular multiphoton ionization and fragmentation

The dynamics of molecular multiphoton ionization and fragmentation of a diatomic molecule (Na_2) have been studied in molecular beam experiments. Femtosecond laser pulses from an amplified colliding-pulse mode-locked (CPM) ring dye laser are employed to induce and probe the molecular transitions. The final continuum states are analyzed by photoelectron spectroscopy, by ion mass spectrometry and by measuring the kinetic energy of the formed ionic fragments. Pump-probe spectra employing 70-fs laser pulses have been measured to study the time dependence of molecular multiphoton ionization and fragmentation. The oscillatory structure of the transient spectra showing the dynamics on the femtosecond time scale can best be understood in terms of the motion of wave packets in bound molecular potentials. The transient Na_2^+ ionization and the transient Na^+ fragmentation spectra show that contributions from direct photoionization of a singly excited electronic state and from excitation and autoionization of a bound doubly excited molecular state determine the time evolution of molecular multiphoton ionization.

Fundamental interactions of molecules (Na_2, Na_3) with intense femtosecond laser pulses

The real-time dynamics of multiphoton ionization and fragmentation of molecules Na_2 and Na_3 has been studied in molecular beam experiments employing ion and electron spectroscopy together with femtosecond pump-probe techniques. Experiments with Na_2 and Na_3 reveal unexpected features of the dynamics of the absorption of several photons as seen in the one- and three-dimensional vibrational wave packet motion in different potential surfaces and in high laser fields: In Na_2 a second major resonance-enhanced multiphoton ionization (REMPI) process is observed, involving the excitation of two electrons and subsequent electronic autoionization. The possibility of controlling a reaction by controlling the duration of propagation of a wave packet on an electronically-excited surface is demonstrated. In high laser fields, the contributions from direct photoionization and from the second REMPI process to the total ion yield change, due to different populations in the electronic states participating in the multiphoton ionization (MPI) processes. In addition, a vibrational wave packet motion in the electronic ground state is induced through stimulated emission pumping by the pump laser. The 4^1 \summe^+_g shelf state of Na_2 is given as an example for performing frequency spectroscopy of highlying electronic states in the time domain. Pure wave packet effects, such as the spreading and the revival of a vibrational wave packet, are investigated. The three-dimensional wave packet motion in the Na_3 reflects the normal modes in the X and B states, and shows in addition the pseudorotational motion in the B state in real time.